Influence of annealing temperature on Raman and photoluminescence spectra of electron beam evaporated TiO2 thin films

2012 ◽  
Vol 99 ◽  
pp. 33-36 ◽  
Author(s):  
M. Vishwas ◽  
K. Narasimha Rao ◽  
R.P.S. Chakradhar
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Annealing Temperature ◽  
Photoluminescence Spectra ◽  
Tio2 Thin Films

scholarly journals Emergence and Evolution of Crystallization in TiO2 Thin Films: A Structural and Morphological Study

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1409
Author(s):  
Ofelia Durante ◽  
Cinzia Di Giorgio ◽  
Veronica Granata ◽  
Joshua Neilson ◽  
Rosalba Fittipaldi ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Transition Metal Oxides ◽  
Annealing Temperature ◽  
Morphological Properties ◽  
Degree Of Crystallinity ◽  
Tio2 Thin Films ◽  
Force Microscopy ◽  
Heat Treated ◽  
Complementary Techniques

Among all transition metal oxides, titanium dioxide (TiO2) is one of the most intensively investigated materials due to its large range of applications, both in the amorphous and crystalline forms. We have produced amorphous TiO2 thin films by means of room temperature ion-plasma assisted e-beam deposition, and we have heat-treated the samples to study the onset of crystallization. Herein, we have detailed the earliest stage and the evolution of crystallization, as a function of both the annealing temperature, in the range 250–1000 °C, and the TiO2 thickness, varying between 5 and 200 nm. We have explored the structural and morphological properties of the as grown and heat-treated samples with Atomic Force Microscopy, Scanning Electron Microscopy, X-ray Diffractometry, and Raman spectroscopy. We have observed an increasing crystallization onset temperature as the film thickness is reduced, as well as remarkable differences in the crystallization evolution, depending on the film thickness. Moreover, we have shown a strong cross-talking among the complementary techniques used displaying that also surface imaging can provide distinctive information on material crystallization. Finally, we have also explored the phonon lifetime as a function of the TiO2 thickness and annealing temperature, both ultimately affecting the degree of crystallinity.

TiO2 thin films – Influence of annealing temperature on structural, optical and photocatalytic properties

Solar Energy ◽  
2009 ◽  
Vol 83 (9) ◽  
pp. 1499-1508 ◽  
Author(s):  
N.R. Mathews ◽  
Erik R. Morales ◽  
M.A. Cortés-Jacome ◽  
J.A. Toledo Antonio
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Photocatalytic Properties ◽  
Tio2 Thin Films

Effect of Annealing on Structural and Optical Properties of Pulsed Laser Deposited Titanium Dioxide Thin Films

2009 ◽  
Vol 67 ◽  
pp. 65-70 ◽  
Author(s):  
Gaurav Shukla ◽  
Alika K. Khare
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Annealing Temperature ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Tio2 Thin Films ◽  
Post Annealing ◽  
Post Annealing Temperature

TiO2 is a widely studied material for many important applications in areas such as environmental purification, photocatalyst, gas sensors, cancer therapy and high effect solar cell. However, investigations demonstrated that the properties and applications of titanium oxide films depend upon the nature of the crystalline phases present in the films, i.e. anatase and rutile phases. We report on the pulsed laser deposition of high quality TiO2 thin films. Pulsed Laser deposition of TiO2 thin films were performed in different ambient viz. oxygen, argon and vacuum, using a second harmonic of Nd:YAG laser of 6 ns pulse width. These deposited films of TiO2 were further annealed for 5hrs in air at different temperatures. TiO2 thin films were characterized using x-ray diffraction, SEM, photoluminescence, transmittance and reflectance. We observed effect of annealing over structural, morphological and optical properties of TiO2 thin films. The anatase phase of as-deposited TiO2 thin films is found to change into rutile phase with increased annealing temperature. Increase in crystalline behaviour of thin films with post-annealing temperature is also observed. Surface morphology of TiO2 thin films is dependent upon ambient pressure and post- annealing temperature. TiO2 thin films are found to be optically transparent with very low reflectivity hence will be suitable for antireflection coating applications.

Stereometric analysis of TiO2 thin films deposited by electron beam ion assisted

2020 ◽  
Vol 52 (5) ◽  
Author(s):  
Reza Shakoury ◽  
Ali Arman ◽  
Ştefan Ţălu ◽  
Davoud Dastan ◽  
Carlos Luna ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Tio2 Thin Films

Oblique angle deposition of TiO2 thin films prepared by electron-beam evaporation

2010 ◽  
Vol 257 (4) ◽  
pp. 1149-1153 ◽  
Author(s):  
Min Wook Pyun ◽  
Eui Jung Kim ◽  
Dae-Hwang Yoo ◽  
Sung Hong Hahn
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Oblique Angle Deposition ◽  
Oblique Angle ◽  
Tio2 Thin Films ◽  
Angle Deposition

Hydrogen gas sensors based on nanocrystalline TiO2 thin films

Open Physics ◽  
2011 ◽  
Vol 9 (5) ◽  
Author(s):  
Azhar Haidry ◽  
Peter Schlosser ◽  
Pavol Durina ◽  
Marian Mikula ◽  
Milan Tomasek ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Gas Sensing ◽  
Hydrogen Gas ◽  
Tio2 Thin Films ◽  
Nanocrystalline Tio2 ◽  
Sensing Properties ◽  
Gas Sensing Properties ◽  
Hydrogen Gas Sensors ◽  
Titanium Dioxide Thin Films

AbstractTitanium dioxide thin films are extensively studied for applications in solid state gas sensor devices. Their gas sensing properties are strongly dependent on deposition technique, annealing temperature, film thickness and consequent properties like crystalline structure, grain size or amount of defects and impurities. In this work we report the gas sensing properties of TiO2 thin films prepared by reactive magnetron sputtering technique and subsequently annealed at temperatures 600°C and 900°C. The films were exposed to different concentrations of H2 gas up to 10 000 ppm. Their sensitivity to gas at various operating temperatures, ranging from 250°C to 450°C, was obtained by measuring their resistance.

Fine structures of photoluminescence spectra of TiO2 thin films with the addition of ZnFe2O4

2002 ◽  
Vol 35 (11) ◽  
pp. L37-L40 ◽  
Author(s):  
Guanghai Li ◽  
Yunxia Jin ◽  
Yong Zhang ◽  
Yunxia Zhang ◽  
Lide Zhang
Keyword(s):  
Thin Films ◽  
Photoluminescence Spectra ◽  
Tio2 Thin Films ◽  
Fine Structures
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