scholarly journals Surface Modification of Cold-working Die Steel by Electron Beam Irradiation – Formation of Cemented Carbide Composite Layer

2014 ◽  
Vol 81 ◽  
pp. 1939-1944 ◽  
Author(s):  
Takahiro Akao ◽  
Yuki Sakurai ◽  
Tetsuhiko Onda ◽  
Kazutake Uehara ◽  
Zhong-chun Chen
Keyword(s):  
Surface Modification ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Cold Working ◽  
Composite Layer ◽  
Cemented Carbide ◽  
Beam Irradiation ◽  
Die Steel ◽  
Carbide Composite

216 Study of a surface modification process of die steels using electron beam irradiation

2014 ◽  
Vol 2014.52 (0) ◽  
pp. _216-1_-_216-2_
Author(s):  
Yuki SAKURAI ◽  
Takahiro AKAO ◽  
Kazutake UEHARA ◽  
Tetsuhiko ONDA ◽  
Zhongchun CHEN
Keyword(s):  
Surface Modification ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Die Steels ◽  
Modification Process

In Situ Optical Observation and Control of Initial Stages of GaAs Growth On Caf2 Surface Modified by Electron Beam Irradiation

1996 ◽  
Vol 448 ◽  
Author(s):  
K. Kawasaki ◽  
K. Tsutsui
Keyword(s):  
Surface Modification ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
In Situ Observation ◽  
Initial Growth ◽  
Beam Irradiation ◽  
Electron Dose ◽  
Surface Modified ◽  
And Control

AbstractWe investigated the electron beam induced surface modification of CaF2(1 11) and initial stage of GaAs growth on the modified CaF2 surface by means of the surface photoabsorption technique and atomic force microscopy (AFM). The CaF2 surface was modified by 300 eV electron beam irradiation at 200°C in a As4 molecular beam. The amount of adsorbed As atoms increased with electron dose and it follows Langmuir adsorption principle and saturated at a value equivalent to I monolayer adsorption. In situ observation of GaAs growth on this modified surface clarified that the sticking coefficient of GaAs on CaF2 surface was drastically improved by the surface modification. AFM observation revealed that the surface roughness of initial growth of GaAs on modified CaF2 was improved at the growth temperature of 550°C

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