scholarly journals Nonlinear Electrical Properties of Thin Films of a Light-Emitting Perovskite-Type Oxide Pr0.002(Ca0.6Sr0.4)0.997TiO3

2012 ◽  
Vol 36 ◽  
pp. 388-395 ◽  
Author(s):  
Keiichi Ikegami ◽  
Ming Lu ◽  
Ryuzoh Ohon ◽  
Kimihiro Yonekawa ◽  
Noboru Miura ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Light Emitting ◽  
Perovskite Type Oxide ◽  
Perovskite Type

Electrical Properties of Perovskite Type Oxide Thin-Films Prepared by RF Sputtering

1985 ◽  
Vol 24 (S2) ◽  
pp. 413 ◽  
Author(s):  
Jun Kuwata ◽  
Yosuke Fujita ◽  
Tomizo Matsuoka ◽  
Takao Tohda ◽  
Masahiro Nishikawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Rf Sputtering ◽  
Oxide Thin Films ◽  
Perovskite Type Oxide ◽  
Perovskite Type

Dielectric relaxation of perovskite—type oxide thin films

1995 ◽  
Vol 10 (1-4) ◽  
pp. 231-245 ◽  
Author(s):  
M. Schumacher ◽  
G. W. Dietz ◽  
R. Waser
Keyword(s):  
Thin Films ◽  
Dielectric Relaxation ◽  
Oxide Thin Films ◽  
Perovskite Type Oxide ◽  
Perovskite Type

Behavior of Hydrogen Atoms in Perovskite-Type Oxide Thin Films under Electric Fields

2009 ◽  
Vol 421-422 ◽  
pp. 281-284 ◽  
Author(s):  
Kentaro Morito ◽  
Toshimasa Suzuki ◽  
Youichi Mizuno ◽  
Isao Sakaguchi ◽  
Naoki Ohashi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electric Fields ◽  
Mass Spectroscopy ◽  
Hydrogen Atoms ◽  
Perovskite Type Oxide ◽  
Thin Film Capacitors ◽  
Bst Thin Film ◽  
Secondary Ion ◽  
Perovskite Type

The behavior of hydrogen in (Ba,Sr)TiO3 (BST) thin film capacitors under electric fields was investigated by performing secondary ion mass spectroscopy (SIMS) analyses. It was clearly observed that the ingress of atmospheric hydrogen into BST thin film capacitors occurred through the anode and that it diffused toward the cathode under electric fields. In addition, it was found that the deterioration of the I-V properties of the BST thin film capacitors can be interpreted in terms of the distribution of hydrogen concentration in the BST thin films.

scholarly journals The Effect of Deposition Rate on the Electrical Properties of Indium Tin Oxide (ITO) Thin Films

2015 ◽  
Vol 16 (2) ◽  
pp. 286
Author(s):  
Hadaate Ullah ◽  
Shahin Mahmud ◽  
Fahmida Sharmin Jui
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Deposition Rate ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Vital Role ◽  
Light Emitting ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Ito Thin Films

<p>Indium-tin oxide (ITO) which is optically transparent is referred as a “universal” electrode for various optoelectronic devices such as organic light emitting diodes (OLEDs). It is scientifically proved that the performance of OLEDs raises up significantly by exposing the ITO surface to oxygen plasma. This study employs conducting atomic force microscopy (C-AFM) for unique nanometer-scale mapping of the local current density of a vapor-deposited ITO film. Indium Tin Oxide (ITO) thin films have been prepared by using the reactive evaporation method on glass substrates in an oxygen atmosphere. It is found that the deposition rate plays a vital role in controlling the electrical properties of the ITO thin films. The resistivity and the electrical conductivity were also investigated. The electrical resistivity of 3.10 x10 <sup>–6</sup> Ωm has been obtained with a deposition rate of 2 nm/min.</p>

High Proton Conductivity in Highly Defected Perovskite-Type Oxide Thin Films

2014 ◽  
Author(s):  
Y. Zenitani ◽  
T. Nishihara ◽  
T. Asano ◽  
H. Adachi ◽  
A. Itou ◽  
...  
Keyword(s):  
Thin Films ◽  
Proton Conductivity ◽  
Oxide Thin Films ◽  
High Proton Conductivity ◽  
Perovskite Type Oxide ◽  
High Proton ◽  
Perovskite Type

scholarly journals Performance Analysis of Ti-Doped In2O3 Thin Films Prepared by Various Doping Concentrations Using RF Magnetron Sputtering for Light-Emitting Device

2020 ◽  
Vol 2020 ◽  
pp. 1-9
Author(s):  
Wittawat Poonthong ◽  
Narong Mungkung ◽  
Pakpoom Chansri ◽  
Somchai Arunrungrusmi ◽  
Toshifumi Yuji
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
High Performance ◽  
Cost Effective ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
Light Emitting ◽  
Display Devices ◽  
Ecl Cell

The influences of doping amounts of TiO2 on the structure and electrical properties of In2O3 films were experimentally studied. In this study, titanium-doped indium oxide (ITiO) conductions were deposited on glass substrate by the dual-target-type radio frequency magnetron sputtering (RFS) system under different conditions of Ti-doped In2O3 targets, from Ti-0.5 wt% to Ti-5.0 wt%, along with 10 mTorr and 300 W pressure of RF power control that was used as a cost-effective transparent electrochemiluminescence (ECL) cell. From this process, the correlation between structural, optical, and electrical properties is reported. It was found that the best 1.14×10−4 Ω cm of resistivity was from Ti-2.5 wt% with the highest carrier concentration (1.15 × 1021 cm-3), Hall mobility (46.03 cm2/V·s), relatively transmittance (82%), and ECL efficiency (0.43 lm·W-1) with well crystalline structured and smooth morphology. As a result, researchers can be responsible for preparing ITiO thin films with significantly improved microstructure and light intensity performance for the effectiveness of the display devices, as well as its simple process and high performance.

Sign in / Sign up

Export Citation Format

Share Document