On the use of oscillating jet flames in a coflow to develop soot models for practical applications

2020 ◽  
Author(s):  
Agnes Jocher ◽  
Michael J. Evans ◽  
Paul R. Medwell ◽  
Bassam B. Dally ◽  
Heinz Pitsch ◽  
...  
Keyword(s):  
Jet Flames ◽  
Practical Applications ◽  
Oscillating Jet

Influence of Burner Material, Tip Temperature, and Geometrical Flame Configuration on Flashback Propensity of H2-Air Jet Flames

2013 ◽  
Vol 136 (2) ◽  
Author(s):  
Zhixuan Duan ◽  
Brendan Shaffer ◽  
Vincent McDonell ◽  
Georg Baumgartner ◽  
Thomas Sattelmayer
Keyword(s):  
Jet Flames ◽  
Comprehensive Overview ◽  
High Hydrogen ◽  
Jet Flame ◽  
Practical Applications ◽  
Geometric Configurations ◽  
Air Jet ◽  
Low Emission ◽  
Flame Burner ◽  
Negative Impacts

Flashback is a key operability issue for low emission premixed combustion systems operated on high hydrogen content fuels. Previous work investigated fuel composition impacts on flashback propensity and found that burner tip temperature was important in correlating flashback data in premixed jet flames. An enclosure around the jet flame was found to enhance the flame–burner rim interaction. The present study further addresses these issues using a jet burner with various geometric configurations and interchangeable materials. Systematic studies addressing the quantitative influence of various parameters such as tip temperature, burner material, enclosure size, and burner diameter on flashback propensity were carried out. A comprehensive overview of the flashback limits for all conditions tested in the current study as well as those published previously is given. The collective results indicate that the burner materials, tip temperature, and flame confinement play significant roles for flashback propensity and thus help explain previous scatter in flashback data. Furthermore, the present work indicates that the upstream flame propagation during flashback is affected by the burner material. The material with lower thermal conductivity yields larger flashback propensity but slower flame regression inside the tube. These observations can be potentially exploited to minimize the negative impacts of flashback in practical applications.

Influence of Burner Material, Tip Temperature and Geometrical Flame Configuration on Flashback Propensity of H2-Air Jet Flames

2013 ◽  
Author(s):  
Zhixuan Duan ◽  
Brendan Shaffer ◽  
Vincent McDonell ◽  
Georg Baumgartner ◽  
Thomas Sattelmayer
Keyword(s):  
Jet Flames ◽  
Comprehensive Overview ◽  
High Hydrogen ◽  
Jet Flame ◽  
Practical Applications ◽  
Geometric Configurations ◽  
Air Jet ◽  
Low Emission ◽  
Flame Burner ◽  
Negative Impacts

Flashback is a key operability issue for low emission premixed combustion systems operated on high hydrogen content fuels. Previous work investigated fuel composition impacts on flashback propensity and found that burner tip temperature was important in correlating flashback data in premixed jet flames. An enclosure around the jet flame was found to enhance the flame-burner rim interaction. The present study further addresses these issues using a jet burner with various geometric configurations and interchangeable materials. Systematic studies addressing the quantitative influence of various parameters such as tip temperature, burner material, enclosure size, and burner diameter on flashback propensity were carried out. A comprehensive overview of the flashback limits for all conditions tested in the current study as well as those published previously is given. The collective results indicate that the burner materials, tip temperature and flame confinement play significant roles for flashback propensity and thus help explain previous scatter in flashback data. Furthermore, the present work indicates that the upstream flame propagation during flashback is affected by the burner material. The material with lower thermal conductivity yields larger flashback propensity but slower flame regression inside the tube. These observations can be potentially exploited to minimize the negative impacts of flashback in practical applications.

scholarly journals Development of Phased Twin Flip-Flop Jets

1994 ◽  
Vol 116 (3) ◽  
pp. 263-268 ◽  
Author(s):  
G. Raman ◽  
E. J. Rice
Keyword(s):  
High Velocity ◽  
Jet Flow ◽  
Flip Flop ◽  
Practical Applications ◽  
Oscillating Jet ◽  
Two Jets ◽  
Phase Differences ◽  
Moving Parts

The flip-flop nozzle is a device that can produce an oscillating jet flow without any moving parts. There is now a renewed interest in such nozzles due to their potential for use as excitation devices in practical applications. An experiment aimed at developing twin flip-flop jets that operate at prescribed frequencies and phase differences was performed. The phasing was achieved using two different nozzle interconnection schemes. In one configuration the two jets flapped in-phase and in another they flapped out-of-phase with respect to each other. In either configuration the frequencies of oscillation of both jets were equal. When one of the jets was run at a constant high velocity and the velocity of the second jet was increased gradually, the higher velocity jet determined the frequency of oscillation of both jets. The two flip-flop jet configurations described in this paper could be used to excite a primary jet flow in either an anti-symmetric (sinuous) or a symmetric (varicose) mode.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

1250-kilovolt scanning transmission electron microscope

1984 ◽  
Vol 42 ◽  
pp. 624-625
Author(s):  
T. Imura ◽  
S. Maruse ◽  
K. Mihama ◽  
M. Iseki ◽  
M. Hibino ◽  
...  
Keyword(s):  
High Voltage ◽  
Electron Probe ◽  
Scanning Transmission Electron Microscope ◽  
Pressure Vessels ◽  
Practical Applications ◽  
Voltage Generator ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
New Applications ◽  
High Voltage Generator

Ultra high voltage STEM has many inherent technical advantages over CTEM. These advantages include better signal detectability and signal processing capability. It is hoped that it will explore some new applications which were previously not possible. Conventional STEM (including CTEM with STEM attachment), however, has been unable to provide these inherent advantages due to insufficient performance and engineering problems. Recently we have developed a new 1250 kV STEM and completed installation at Nagoya University in Japan. It has been designed to break through conventional engineering limitations and bring about theoretical advantage in practical applications.In the design of this instrument, we exercised maximum care in providing a stable electron probe. A high voltage generator and an accelerator are housed in two separate pressure vessels and they are connected with a high voltage resistor cable.(Fig. 1) This design minimized induction generated from the high voltage generator, which is a high frequency Cockcroft-Walton type, being transmitted to the electron probe.

Characterization of intergranular cuprous oxide in polycrystalline YBa2Cu3O7-x

1988 ◽  
Vol 46 ◽  
pp. 880-881
Author(s):  
Bradley L. Thiel ◽  
Chan Han R. P. ◽  
Kurosky L. C. Hutter ◽  
I. A. Aksay ◽  
Mehmet Sarikaya
Keyword(s):  
Grain Boundary ◽  
Cuprous Oxide ◽  
Room Temperature ◽  
Boundary Phase ◽  
Spectroscopic Techniques ◽  
Transition Width ◽  
Practical Applications ◽  
Thin Foils ◽  
Superconducting Oxides

The identification of extraneous phases is important in understanding of high Tc superconducting oxides. The spectroscopic techniques commonly used in determining the origin of superconductivity (such as RAMAN, XPS, AES, and EXAFS) are surface-sensitive. Hence a grain boundary phase several nanometers thick could produce irrelevant spectroscopic results and cause erroneous conclusions. The intergranular phases present a major technological consideration for practical applications. In this communication we report the identification of a Cu2O grain boundary phase which forms during the sintering of YBa2Cu3O7-x (1:2:3 compound).Samples are prepared using a mixture of Y2O3. CuO, and BaO2 powders dispersed in ethanol for complete mixing. The pellets pressed at 20,000 psi are heated to 950°C at a rate of 5°C per min, held for 1 hr, and cooled at 1°C per min to room temperature. The samples show a Tc of 91K with a transition width of 2K. In order to prevent damage, a low temperature stage is used in milling to prepare thin foils which are then observed, using a liquid nitrogen holder, in a Philips 430T at 300 kV.

Resolution and measurement in the scanning electron microscope

1987 ◽  
Vol 45 ◽  
pp. 534-537 ◽  
Author(s):  
Michael T. Postek
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Engineering Design ◽  
Resolving Power ◽  
Practical Applications ◽  
Instrument Resolution ◽  
Accurate Definition ◽  
Definition Of ◽  
Scanning Electron ◽  
Better Than

The term ultimate resolution or resolving power is the very best performance that can be obtained from a scanning electron microscope (SEM) given the optimum instrumental conditions and sample. However, as it relates to SEM users, the conventional definitions of this figure are ambiguous. The numbers quoted for the resolution of an instrument are not only theoretically derived, but are also verified through the direct measurement of images on micrographs. However, the samples commonly used for this purpose are specifically optimized for the measurement of instrument resolution and are most often not typical of the sample used in practical applications.SEM RESOLUTION. Some instruments resolve better than others either due to engineering design or other reasons. There is no definitively accurate definition of how to quantify instrument resolution and its measurement in the SEM.

In situ TEM Studies of agglomeration of sub-nanometer Ru layers in Ru/C multilayers

1992 ◽  
Vol 50 (1) ◽  
pp. 256-257
Author(s):  
Tai D. Nguyen ◽  
Ronald Gronsky ◽  
Jeffrey B. Kortright
Keyword(s):  
Layered Structure ◽  
Driving Force ◽  
High Energy ◽  
Superior Performance ◽  
In Situ Tem ◽  
Rayleigh Instability ◽  
Practical Applications ◽  
Transmission Electron ◽  
Diffraction Patterns

Nanometer period Ru/C multilayers are one of the prime candidates for normal incident reflecting mirrors at wavelengths < 10 nm. Superior performance, which requires uniform layers and smooth interfaces, and high stability of the layered structure under thermal loadings are some of the demands in practical applications. Previous studies however show that the Ru layers in the 2 nm period Ru/C multilayer agglomerate upon moderate annealing, and the layered structure is no longer retained. This agglomeration and crystallization of the Ru layers upon annealing to form almost spherical crystallites is a result of the reduction of surface or interfacial energy from die amorphous high energy non-equilibrium state of the as-prepared sample dirough diffusive arrangements of the atoms. Proposed models for mechanism of thin film agglomeration include one analogous to Rayleigh instability, and grain boundary grooving in polycrystalline films. These models however are not necessarily appropriate to explain for the agglomeration in the sub-nanometer amorphous Ru layers in Ru/C multilayers. The Ru-C phase diagram shows a wide miscible gap, which indicates the preference of phase separation between these two materials and provides an additional driving force for agglomeration. In this paper, we study the evolution of the microstructures and layered structure via in-situ Transmission Electron Microscopy (TEM), and attempt to determine the order of occurence of agglomeration and crystallization in the Ru layers by observing the diffraction patterns.

A New Detector System For The HB5 Stem Instrument

1985 ◽  
Vol 43 ◽  
pp. 134-135
Author(s):  
J.M. Cowley
Keyword(s):  
Dark Field ◽  
Detector System ◽  
Electron Holography ◽  
Small Specimen ◽  
Bright Field ◽  
Multiple Images ◽  
Practical Applications ◽  
Wide Range ◽  
Diffraction Patterns ◽  
Operational Modes

The HB5 STEM instrument at ASU has been modified previously to include an efficient two-dimensional detector incorporating an optical analyser device and also a digital system for the recording of multiple images. The detector system was built to explore a wide range of possibilities including in-line electron holography, the observation and recording of diffraction patterns from very small specimen regions (having diameters as small as 3Å) and the formation of both bright field and dark field images by detection of various portions of the diffraction pattern. Experience in the use of this system has shown that sane of its capabilities are unique and valuable. For other purposes it appears that, while the principles of the operational modes may be verified, the practical applications are limited by the details of the initial design.

Practical applications of scanning tunneling microscopy

1989 ◽  
Vol 47 ◽  
pp. 18-19
Author(s):  
D. R. Denley
Keyword(s):  
High Resolution ◽  
Scanning Tunneling Microscopy ◽  
Quantitative Information ◽  
Digital Data ◽  
Scanning Tunneling ◽  
Ambient Atmosphere ◽  
Tunneling Microscopy ◽  
Clear Trend ◽  
Practical Applications ◽  
Promising Tool

Scanning tunneling microscopy (STM) has recently been introduced as a promising tool for analyzing surface atomic structure. We have used STM for its extremely high resolution (especially the direction normal to surfaces) and its ability for imaging in ambient atmosphere. We have examined surfaces of metals, semiconductors, and molecules deposited on these materials to achieve atomic resolution in favorable cases.When the high resolution capability is coupled with digital data acquisition, it is simple to get quantitative information on surface texture. This is illustrated for the measurement of surface roughness of evaporated gold films as a function of deposition temperature and annealing time in Figure 1. These results show a clear trend for which the roughness, as well as the experimental deviance of the roughness is found to be minimal for evaporation at 300°C. It is also possible to contrast different measures of roughness.

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