Insight of arsenic transformation behavior during high-arsenic coal combustion

2019 ◽  
Vol 37 (4) ◽  
pp. 4443-4450 ◽  
Author(s):  
Yuhan Yang ◽  
Hongyun Hu ◽  
Kang Xie ◽  
Yongda Huang ◽  
Huan Liu ◽  
...  
2006 ◽  
Vol 25 (S1) ◽  
pp. 49-50 ◽  
Author(s):  
Junying Zhang ◽  
Yongchun Zhao ◽  
Wenchun Huang ◽  
Yang Li ◽  
Dangyu Song ◽  
...  

2003 ◽  
Vol 107 ◽  
pp. 495-498
Author(s):  
N. Fujiwara ◽  
Y. Fujita ◽  
K. Tomura ◽  
H. Moritomi ◽  
E. Murakami ◽  
...  

2021 ◽  
Vol 403 ◽  
pp. 123687
Author(s):  
Lifang Hu ◽  
Zhiyuan Nie ◽  
Wenjie Wang ◽  
Dongchen Zhang ◽  
Yuyang Long ◽  
...  

Author(s):  
James S. Webber

INTRODUCTION“Acid rain” and “acid deposition” are terms no longer confined to the lexicon of atmospheric scientists and 1imnologists. Public awareness of and concern over this phenomenon, particularly as it affects acid-sensitive regions of North America, have increased dramatically in the last five years. Temperate ecosystems are suffering from decreased pH caused by acid deposition. Human health may be directly affected by respirable sulfates and by the increased solubility of toxic trace metals in acidified waters. Even man's monuments are deteriorating as airborne acids etch metal and stone features.Sulfates account for about two thirds of airborne acids with wet and dry deposition contributing equally to acids reaching surface waters or ground. The industrial Midwest is widely assumed to be the source of most sulfates reaching the acid-sensitive Northeast since S02 emitted as a byproduct of coal combustion in the Midwest dwarfs S02 emitted from all sources in the Northeast.


Author(s):  
Byung-Teak Lee

Grown-in dislocations in GaAs have been a major obstacle in utilizing this material for the potential electronic devices. Although it has been proposed in many reports that supersaturation of point defects can generate dislocation loops in growing crystals and can be a main formation mechanism of grown-in dislocations, there are very few reports on either the observation or the structural analysis of the stoichiometry-generated loops. In this work, dislocation loops in an arsenic-rich GaAs crystal have been studied by transmission electron microscopy.The single crystal with high arsenic concentration was grown using the Horizontal Bridgman method. The arsenic source temperature during the crystal growth was about 630°C whereas 617±1°C is normally believed to be optimum one to grow a stoichiometric compound. Samples with various orientations were prepared either by chemical thinning or ion milling and examined in both a JEOL JEM 200CX and a Siemens Elmiskop 102.


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