The influence of char surface oxidation on thermal annealing and loss of combustion reactivity

2005 ◽  
Vol 30 (2) ◽  
pp. 2223-2230 ◽  
Author(s):  
Osvalda Senneca ◽  
Piero Salatino ◽  
Sabato Masi
Keyword(s):  
Thermal Annealing ◽  
Surface Oxidation ◽  
Combustion Reactivity

Key role of surface oxidation and reduction processes in the coarsening of Pt nanoparticles

Nanoscale ◽  
2017 ◽  
Vol 9 (35) ◽  
pp. 13159-13170 ◽  
Author(s):  
Eduardo Solano ◽  
Jolien Dendooven ◽  
Ranjith K. Ramachandran ◽  
Kevin Van de Kerckhove ◽  
Thomas Dobbelaere ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Pt Nanoparticles ◽  
Surface Oxidation ◽  
Reduction Processes

In situ GISAXS during thermal annealing for unraveling the factors and mechanism governing the coarsening of supported Pt nanoparticles.

Annealing Of Radiation Damage in Tungsten

1970 ◽  
Vol 28 ◽  
pp. 412-413
Author(s):  
Robert C. Rau ◽  
John Moteff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Radiation Damage ◽  
Thermal Annealing ◽  
Neutron Fluence ◽  
Dislocation Loops ◽  
Defect Clusters ◽  
Polycrystalline Tungsten ◽  
Transmission Electron ◽  
Radiation Induced

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.

Growth of hematite by surface oxidation of olivine

1988 ◽  
Vol 46 ◽  
pp. 800-801
Author(s):  
S. McKernan ◽  
C. B. Carter
Keyword(s):  
Electron Microscope ◽  
Surface Oxidation ◽  
Thin Foil ◽  
Nucleation And Growth ◽  
Ion Milling ◽  
Annealed Material ◽  
Thin Foils ◽  
Natural Olivine ◽  
Approximate Composition ◽  
Second Phases

The oxidation of natural olivine has previously been performed on bulk samples and the reactions followed by preparation of TEM specimens from the annealed material. These results show that below ∼1000°C hematite and amorphous silica are formed, particularly around dislocations. At higher temperatures magnetite and some enstatite-like phase are formed. In both cases the olivine is left almost totally Fe depleted. By performing the oxidation on characterized thin TEM specimens it is possible to obtain more information on the nucleation and growth of the second phases formed. The conditions in a thin foil, however, are very different from those in the bulk especially with regard to surface effects. The nucleation of precipitates in particular may be expected to occur differently in these thin foils than in the bulk.TEM specimens of natural olivine (approximate composition Mg+Fe+Si2o4) which had been annealed at 1000°C for 1 hr were prepared by mechanical polishing and dimpling, followed by Ar ion milling to perforation. The specimens were characterized in the electron microscope and then heated in air in alumina boats to 900°C for between 30 and 180 minutes.

In-Situ Study of NiO Growth on Textured Nickel Tape Using Environmental Scanning Electron Microscope (ESEM) and Hot Stage

2001 ◽  
Vol 7 (S2) ◽  
pp. 1276-1277
Author(s):  
Y. Akin ◽  
R.E. Goddard ◽  
W. Sigmund ◽  
Y.S. Hascicek
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Sol Gel ◽  
Surface Oxidation ◽  
Dip Coating ◽  
Buffer Layers ◽  
Superconducting Film ◽  
Environmental Scanning ◽  
Cold Rolling And Annealing

Deposition of highly textured ReBa2Cu3O7−δ (RBCO) films on metallic substrates requires a buffer layer to prevent chemical reactions, reduce lattice mismatch between metallic substrate and superconducting film layer, and to prevent diffusion of metal atoms into the superconductor film. Nickel tapes are bi-axially textured by cold rolling and annealing at appropriate temperature (RABiTS) for epitaxial growth of YBa2Cu3O7−δ (YBCO) films. As buffer layers, several oxide thin films and then YBCO were coated on bi-axially textured nickel tapes by dip coating sol-gel process. Biaxially oriented NiO on the cube-textured nickel tape by a process named Surface-Oxidation- Epitaxy (SEO) has been introduced as an alternative buffer layer. in this work we have studied in situ growth of nickel oxide by ESEM and hot stage.Representative cold rolled nickel tape (99.999%) was annealed in an electric furnace under 4% hydrogen-96% argon gas mixture at 1050°C to get bi-axially textured nickel tape.

KINETICS OF SURFACE OXIDATION AND RELATED CHANGES IN THE MAGNETISM OF AMORPHOUS TbFeCo FILMS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-1711-C8-1712 ◽  
Author(s):  
S. Klahn ◽  
H. Heitmann ◽  
M. Rosenkranz ◽  
H. J. Tolle
Keyword(s):  
Surface Oxidation ◽  
Kinetics Of

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Optical and Electrical Characteristics of Amorphous InGaZnO after Thermal Annealing

2008 ◽  
Author(s):  
Satoshi Taniguchi ◽  
Norihiko Yamaguchi ◽  
Takao Miyajima ◽  
Masao Ikeda
Keyword(s):  
Thermal Annealing ◽  
Electrical Characteristics ◽  
Amorphous Ingazno

Effect of a Ti-capped and Ti-mediated Layer on Co Silicide Formation

2002 ◽  
Vol 716 ◽  
Author(s):  
G.Z. Pan ◽  
E.W. Chang ◽  
Y. Rahmat-Samii
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Barrier ◽  
Silicide Formation ◽  
Plan View ◽  
Processing Window

AbstractWe comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.

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