Parabola-Hyperbola P-H kinetic model for NR sulphur vulcanization

2017 ◽  
Vol 58 ◽  
pp. 104-115 ◽  
Author(s):  
G. Milani ◽  
F. Milani
Keyword(s):  
Kinetic Model ◽  
Sulphur Vulcanization

A KINETIC MODEL FOR THE CRYSTAL VIOLET MINERALIZATION IN WATER BY THE ELECTRO- FENTON PROCESS

2008 ◽  
Vol 7 (1) ◽  
pp. 9-12 ◽  
Author(s):  
Ilie Siminiceanu ◽  
Carmen-Ionela Alexandru ◽  
Eric Brillas
Keyword(s):  
Kinetic Model ◽  
Crystal Violet ◽  
Fenton Process

Achieving Procedure of a Kinetic Model to Predict the Influence of the Process Global Temperature on a Technological Alcoholic Fermentation II. An Arrhenius type Kinetic Model

2008 ◽  
Vol 59 (4) ◽  
Author(s):  
Neculai Catalin Lungu ◽  
Maria Alexandroaei
Keyword(s):  
Experimental Data ◽  
Saccharomyces Cerevisiae ◽  
Kinetic Model ◽  
Economic Efficiency ◽  
Fermentation Process ◽  
Alcoholic Fermentation ◽  
Global Temperature ◽  
Medium Temperature ◽  
Biotechnological Process

The aim of the present work is to offer a practical methodology to realise an Arrhenius type kinetic model for a biotechnological process of alcoholic fermentation based on the Saccharomyces cerevisiae yeast. Using the experimental data we can correlate the medium temperature of fermentation with the time needed for a fermentation process under imposed conditions of economic efficiency.

Five-Lump Kinetic Model for the Catalytic Cracking Process\

2018 ◽  
Vol 69 (10) ◽  
pp. 2633-2637
Author(s):  
Raluca Dragomir ◽  
Paul Rosca ◽  
Cristina Popa
Keyword(s):  
Kinetic Model ◽  
Programming Language ◽  
Catalytic Cracking ◽  
Computational Method ◽  
Industrial Data ◽  
New Model ◽  
Optimization And Control ◽  
Cracking Process ◽  
And Control ◽  
Matlab Programming

The main objectives of the present paper are to adaptation the five-kinetic model of the catalytic cracking process and simulation the riser to predicts the FCC products yields when one of the major input variable of the process is change. The simulation and adaptation are based on the industrial data from Romanian refinery. The adaptation is realize using a computational method from Optimization Toolbox from Matlab programming language. The new model can be used for optimization and control of FCC riser.

Nitrate and chloride formation in chloramination

1994 ◽  
Vol 30 (9) ◽  
pp. 101-110
Author(s):  
V. Diyamandoglu
Keyword(s):  
Kinetic Model ◽  
Analytical Method ◽  
Kinetic Data ◽  
Experimental Results ◽  
Mass Balances ◽  
Time Profiles ◽  
Slow Decay ◽  
Concentration Time ◽  
End Products ◽  
Chlorine Residuals

The formation of nitrate and chloride as end-products of chloramination (combined chlorination) was investigated at pH ranging between 6.9 and 9.6 at 25°C. The experimental results comprised concentration-time profiles of combined chlorine residuals along with nitrate and chloride. Nitrite, if present, was always below the detectibility limit of the analytical method used (25 ppb). Mass balances on chlorine species depicted that chloride formed during the slow decay of combined chlorine residuals does not account for all the chlorine lost. This substantiates the formation of other reaction end-products which are yet to be identified. A kinetic model for chloramination is proposed based on the kinetic data obtained in this study.

Experimental Validation of the Plasma Kinetic Model

2018 ◽  
Author(s):  
Matthew David Webb ◽  
Zachary Kenneth Hardy
Keyword(s):  
Kinetic Model ◽  
Experimental Validation ◽  
Plasma Kinetic

Kinetic Model of Metabolism of Monoclonal Antibody Producing CHO Cells

2019 ◽  
Vol 6 (3) ◽  
pp. 207-217
Author(s):  
Joshua Rico ◽  
Andre Nantel ◽  
Phuong Lan Pham ◽  
Robert Voyer ◽  
Yves Durocher ◽  
...  
Keyword(s):  
Monoclonal Antibody ◽  
Kinetic Model ◽  
Cho Cells

Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method

1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina
Keyword(s):  
Experimental Data ◽  
Growth Rate ◽  
Kinetic Model ◽  
Gas Phase ◽  
Substrate Surface ◽  
Deposition Process ◽  
Hydrogen Atmosphere ◽  
Epitaxial Gaas ◽  
Kinetics Of ◽  
Good Agreement

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.

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