Thermal degradation in bulk and thin films of 2-, 4-, and 6-arm polystyrene stars with a C60 core

Polymer ◽  
2006 ◽  
Vol 47 (4) ◽  
pp. 1028-1035 ◽  
Author(s):  
O.F. Pozdnyakov ◽  
A.O. Pozdnyakov ◽  
B. Schmaltz ◽  
C. Mathis
2013 ◽  
Vol 56 (4) ◽  
pp. 133-135
Author(s):  
Yuki IKEDA ◽  
Satoru IWAMORI ◽  
Hiroyuki MATSUMOTO ◽  
Kiyoshi YOSHINO ◽  
Itsuo NISHIYAMA ◽  
...  

2015 ◽  
Vol 35 (3) ◽  
pp. 231-239 ◽  
Author(s):  
Maria Mucha ◽  
Sylwia Ksiazek ◽  
Halina Kaczmarek

Abstract Thin films of chitosan acetate (CSA)-copper (II) [Cu (II)] complex were prepared by mixing Cu (II) oxide (CuO) nanoparticles in acetic acid solution of chitosan and the casting method. The changes in chemical structure of modified chitosan were confirmed by UV-Vis spectroscopy. Fourier transform infrared (FTIR) spectroscopy was applied to monitor thermal degradation processes occurring in chitosan and its composites with Cu. The changes in concentration of chitosan functional groups were observed. On a base of the kinetic constants of group thermal degradation at various temperatures, the activation energies for various groups were calculated. It was found that the presence of Cu (II) ions accelerates the thermal degradation of chitosan acetate. The higher the Cu (II) content was in the CSA matrix, the lower was the activation energy.


2005 ◽  
Vol 20 (6) ◽  
pp. 1574-1579 ◽  
Author(s):  
Yong-Nam Kim ◽  
Hyun-Gyoo Shin ◽  
Jun-Kwang Song ◽  
Dae-Hyoung Cho ◽  
Hee-Soo Lee ◽  
...  

The thermal degradation behavior of indium tin oxide (ITO) thin films coated on glass substrates using radio frequency (rf) magnetron sputtering was investigated over the temperature range of 100–400 °C in air. The resistivity of ITO films increases abruptly after the thermal degradation temperature of 250 °C is reached, with a slight increase from 200 to 250 °C. The x-ray photoelectron spectrometry intensity ratio of O/(In + Sn) in thermally degraded ITO films is higher than that in normal films. The carrier concentration gradually decreases up to 200 °C, sharply drops between 200 and 250 °C with increasing temperature, and then saturates from 275 °C. The Hall mobility drops suddenly at 275 °C. The diffusion of oxygen into oxygen interstitials and oxygen vacancies and the chemisorption of oxygen into grain boundaries decrease the carrier concentration and the Hall mobility, respectively. The former mainly affects the resistivity of ITO films below 250 °C, and the later above 250 °C.


Author(s):  
Jeong-Suong Yang ◽  
YunSung Kang ◽  
Inyoung Kang ◽  
SeungMo Lim ◽  
Seung-Joo Shin ◽  
...  

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