Block-copolymer organic–inorganic networks. Structure, morphology and thermomechanical properties

Polymer ◽  
2004 ◽  
Vol 45 (10) ◽  
pp. 3267-3276 ◽  
Author(s):  
Libor Matějka ◽  
Oxana Dukh ◽  
Helena Kamišová ◽  
Drahomı́ra Hlavatá ◽  
Milena Špı́rková ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Thermomechanical Properties ◽  
Structure Morphology ◽  
Networks Structure

scholarly journals Study on the Shape Memory Polyamides. Synthesis and Thermomechanical Properties of Polycaprolactone-Polyamide Block Copolymer

2000 ◽  
Vol 32 (1) ◽  
pp. 23-28 ◽  
Author(s):  
Ha Yung Lee ◽  
Han Mo Jeong ◽  
Jeong Sam Lee ◽  
Byung Kyu Kim
Keyword(s):  
Block Copolymer ◽  
Shape Memory ◽  
Thermomechanical Properties

Preparation of cross-linked PVC-g-(St-MA) copolymer/organoclay nanocomposites and investigation of chemical characteristics, morphology, thermal, and mechanical properties

2019 ◽  
pp. 089270571988601
Author(s):  
Reza Izadpanah ◽  
Mostafa Rezaei ◽  
Saeid Talebi
Keyword(s):  
Mechanical Properties ◽  
Clay Content ◽  
Thermomechanical Properties ◽  
Morphological Observation ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Transmission Electron ◽  
Bonding Interaction ◽  
Structure Morphology ◽  
Nanoclay Content

The goal of this work is to investigate the effect of incorporating organoclays on the cross-link structure, morphology, and thermomechanical properties of cross-linked organoclay/polyvinyl chloride grafted with styrene and maleic anhydride (PVC- g-(St-MA)) copolymer nanocomposites (CPN). Cloisite30B (C30B) and Cloisite15A (C15A) organoclays were used for the preparation of cross-linked PVC- g-(St-MA) nanocomposites by the solution mixing route. The nanoclay content in nanocomposites varied from 0.2 wt% to 1 wt%. The chemical structure and interaction between PVC- g-(St-MA) cross-linked segments and nanoclays were studied by Fourier transform infrared (FTIR) peaks deconvolution method. FTIR spectroscopy suggested the lowest extent of hydrogen bonding interaction for C30B containing sample, which decreased with clay content increment. The morphology of nanocomposites was studied by X-ray diffraction and transmission electron microscopy methods. Morphological observation revealed a near to the exfoliation state for organoclays in PVC- g-(St-MA) nanocomposite containing 1 wt% C30B. However, C15A/PVC- g-(St-MA) nanocomposite (C15A-CPN) exhibited partially intercalated and agglomerated morphology. Differential scanning calorimetry examination was conducted to measure the glass transition temperature ( T g) of the segments. At the same clay content, the T g of the C30B containing nanocomposites were higher than that of C15A samples. The mechanical properties of these nanocomposites were also investigated. As a consequence, C30B-CPN showed improved mechanical properties compared to C15A-CPN and cross-linked PVC- g-(St-MA) samples.

MACROSCOPIC " SINGLE CRYSTALS " OF AN S-B-S THREE BLOCK COPOLYMER

1971 ◽  
Vol 32 (C5) ◽  
pp. C5a-295-C5a-300
Author(s):  
A. KELLER ◽  
J. DLUGOSZ ◽  
M. J. FOLKES ◽  
E. PEDEMONTE ◽  
F. P. SCALISI ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Single Crystals

Preparation of La-doped TiO$lt;inf$gt;2$lt;/inf$gt; Ultrafiltration Membrane by Templating of Block Copolymer

2015 ◽  
Vol 30 (2) ◽  
pp. 171 ◽  
Author(s):  
CHEN Tao-Tao ◽  
LI Dan ◽  
JING Wen-Heng ◽  
FAN Yi-Qun ◽  
XING Wei-Hong
Keyword(s):  
Block Copolymer ◽  
Ultrafiltration Membrane ◽  
La Doped

Materials Issues and Characterization of Low-k Dielectric Materials

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 49-54 ◽  
Author(s):  
E. Todd Ryan ◽  
Andrew J. McKerrow ◽  
Jihperng Leu ◽  
Paul S. Ho
Keyword(s):  
Process Integration ◽  
Dielectric Materials ◽  
Propagation Delay ◽  
Thermomechanical Properties ◽  
General Criterion ◽  
Crosstalk Noise ◽  
Total Delay ◽  
Interlayer Dielectrics ◽  
Performance Improvements ◽  
And Performance

Continuing improvement in device density and performance has significantly affected the dimensions and complexity of the wiring structure for on-chip interconnects. These enhancements have led to a reduction in the wiring pitch and an increase in the number of wiring levels to fulfill demands for density and performance improvements. As device dimensions shrink to less than 0.25 μm, the propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance (RC) coupling become significant. Accordingly the interconnect delay now constitutes a major fraction of the total delay limiting the overall chip performance. Equally important is the processing complexity due to an increase in the number of wiring levels. This inevitably drives cost up by lowering the manufacturing yield due to an increase in defects and processing complexity.To address these problems, new materials for use as metal lines and interlayer dielectrics (ILDs) and alternative architectures have surfaced to replace the current Al(Cu)/SiO2 interconnect technology. These alternative architectures will require the introduction of low-dielectric-constant k materials as the interlayer dielectrics and/or low-resistivity conductors such as copper. The electrical and thermomechanical properties of SiO2 are ideal for ILD applications, and a change to material with different properties has important process-integration implications. To facilitate the choice of an alternative ILD, it is necessary to establish general criterion for evaluating thin-film properties of candidate low-k materials, which can be later correlated with process-integration problems.

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