Observation of spin-flop transition in antiferromagnetic organic molecular conductors using AFM micro-cantilever

Polyhedron ◽  
2005 ◽  
Vol 24 (16-17) ◽  
pp. 2793-2795 ◽  
Author(s):  
Madoka Tokumoto ◽  
Hisashi Tanaka ◽  
Takeo Otsuka ◽  
Hayao Kobayashi ◽  
Akiko Kobayashi
Keyword(s):  
Molecular Conductors ◽  
Spin Flop Transition ◽  
Micro Cantilever ◽  
Organic Molecular Conductors

Origin of delocalization in organic molecular conductors

1979 ◽  
Vol 31 (2) ◽  
pp. 83-88 ◽  
Author(s):  
M. Kaveh ◽  
M. Weger ◽  
H. Gutfreund
Keyword(s):  
Molecular Conductors ◽  
Organic Molecular Conductors

Infrared studies of low-temperature symmetry breaking in the perrhenate family of ET-based organic molecular conductors

1999 ◽  
Vol 60 (2) ◽  
pp. 931-941 ◽  
Author(s):  
S. M. Baker ◽  
J. Dong ◽  
G. Li ◽  
Z. Zhu ◽  
J. L. Musfeldt ◽  
...  
Keyword(s):  
Low Temperature ◽  
Symmetry Breaking ◽  
Molecular Conductors ◽  
Infrared Studies ◽  
Organic Molecular Conductors

Electrochemical Crystallization of Organic Molecular Conductors: Electrode Surface Conditions for Crystal Growth

2013 ◽  
Vol 13 (5) ◽  
pp. 1955-1960 ◽  
Author(s):  
Tetsuro Miyahira ◽  
Hiroyuki Hasegawa ◽  
Yukihiro Takahashi ◽  
Tamotsu Inabe
Keyword(s):  
Crystal Growth ◽  
Electrode Surface ◽  
Molecular Conductors ◽  
Surface Conditions ◽  
Organic Molecular Conductors

Anisotropic materials prepared by OCVD: Organic molecular conductors

1996 ◽  
Vol 2 (6) ◽  
pp. 251-253 ◽  
Author(s):  
Jaume Caro ◽  
Susana Garelik ◽  
Albert Figueras
Keyword(s):  
Anisotropic Materials ◽  
Molecular Conductors ◽  
Organic Molecular Conductors

Fabrication of Monolithic Integrated Bimaterial Resonant Uncooled IR Sensor

2013 ◽  
Vol 543 ◽  
pp. 176-179 ◽  
Author(s):  
D.Q. Zhao ◽  
Xia Zhang ◽  
P. Liu ◽  
F. Yang ◽  
C. Lin ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Hole Mobility ◽  
Micro Electro Mechanical System ◽  
Cmos Process ◽  
Standard Cmos Process ◽  
Ir Sensor ◽  
Cantilever Structure ◽  
Cmos Mems ◽  
On Chip ◽  
Micro Cantilever

In this work we studied the fabrication of a monolithic bimaterial micro-cantilever resonant IR sensor with on-chip drive circuits. The effects of high temperature process and stress induced performance degradation were investigated. The post-CMOS MEMS (micro electro mechanical system) fabrication process of this IR sensor is the focus of this paper, starting from theoretical analysis and simulation, and then moving to experimental verification. The capacitive cantilever structure was fabricated by surface micromachining method, and drive circuits were prepared by standard CMOS process. While the stress introduced by MEMS films, such as the tensile silicon nitride which works as a contact etch stopper layer for MOSFETs and releasing stop layer for the MEMS structure, increases the electron mobility of NMOS, PMOS hole mobility decreases. Moreover, the NMOS threshold voltage (Vth) shifts, and transconductance (Gm) degrades. An additional step of selective removing silicon nitride capping layer and polysilicon layer upon IC area were inserted into the standard CMOS process to lower the stress in MOSFET channel regions. Selective removing silicon nitride and polysilicon before annealing can void 77% Vth shift and 86% Gm loss.

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