scholarly journals Effect of coating current density on the wettability of electrodeposited copper thin film on aluminum substrate

2016 ◽  
Vol 8 ◽  
pp. 472-474 ◽  
Author(s):  
Arun Augustin ◽  
K. Rajendra Udupa ◽  
K. Udaya Bhat
Keyword(s):  
Thin Film ◽  
Current Density ◽  
Aluminum Substrate ◽  
Copper Thin Film

Effect of the Crystallinity on the Electromigration Resistance of Electroplated Copper Thin-Film Interconnections

2017 ◽  
Vol 139 (2) ◽  
Author(s):  
Takeru Kato ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Thin Film ◽  
Activation Energy ◽  
Grain Boundaries ◽  
Joule Heating ◽  
Current Density ◽  
Constant Current ◽  
Maximum Temperature ◽  
Copper Thin Film ◽  
Electroplated Copper ◽  
Low Crystallinity

Dominant factors of electromigration (EM) resistance of electroplated copper thin-film interconnections were investigated from the viewpoint of temperature and crystallinity of the interconnection. The EM test under the constant current density of 7 mA/cm2 was performed to observe the degradation such as accumulation of copper atoms and voids. Formation of voids and the accumulation occurred along grain boundaries during the EM test, and finally the interconnection was fractured at the not cathode side but at the center part of the interconnection. From the monitoring of temperature of the interconnection by using thermography during the EM test, this abnormal fracture was caused by large Joule heating of itself under high current density. In order to investigate the effect of grain boundaries on the degradation by EM, the crystallinity of grain boundaries in the interconnection was evaluated by using image quality (IQ) value obtained from electron backscatter diffraction (EBSD) analysis. The crystallinity of grain boundaries before the EM test had wide distribution, and the grain boundaries damaged under the EM loading mainly were random grain boundaries with low crystallinity. Thus, high density of Joule heating and high-speed diffusion of copper atoms along low crystallinity grain boundaries accelerated the EM degradation of the interconnection. The change of Joule heating density and activation energy for the EM damage were evaluated by using the interconnection annealed at 400 °C for 3 h. The annealing of the interconnection increased not only average grain size but also crystallinity of grains and grain boundaries drastically. The average IQ value of the interconnection was increased from 4100 to 6200 by the annealing. The improvement of the crystallinity decreased the maximum temperature of the interconnection during the EM test and increased the activation energy from 0.72 eV to 1.07 eV. The estimated lifetime of interconnections is increased about 100 times by these changes. Since the atomic diffusion is accelerated by not only the current density but also temperature and low crystallinity grain boundaries, the lifetime of the interconnections under EM loading is a strong function of their crystallinity. Therefore, it is necessary to evaluate and control the crystallinity of interconnections quantitatively using IQ value to assure their long-term reliability.

Stress-Induced and Electro-Migration of Electroplated Copper Thin Film Interconnections Used for 3D Integration

2011 ◽  
Author(s):  
Naoki Saito ◽  
Naokazu Murata ◽  
Kinji Tamakawa ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stress ◽  
Grain Boundaries ◽  
Current Density ◽  
Annealed Film ◽  
Applied Current ◽  
Copper Thin Film ◽  
Applied Current Density ◽  
Electroplated Copper

Electroplated copper thin films have started to be applied to not only interconnections in printed wiring boards, but also thin film interconnections and TSV (Through Silicon Via) in semiconductor devices because of its low electric resistivity and high thermal conductivity. Thus, the electrical reliability of the electroplated copper interconnections was investigated experimentally. Self-made electroplated copper thin film interconnections were used for the evaluation. Electroplating conditions are as follows. The thin film interconnections were made by damascene process for electromigration tests. The applied current density during the test was varied from 1 MA/cm2 to 10 MA/cm2. Abrupt fracture caused by the local fusion was often observed in the as-electroplated interconnections within a few hours during the test. Since there were a lot of porous grain boundaries in the as-electroplated thin films, the local high Joule heating should have caused the fusion at one of the porous grain boundaries. Actually, it was confirmed that the failure rate increased linearly with the square of the amplitude of the applied current density. However, the diffusion of copper atoms caused by electromigration was enhanced significantly when the film was annealed at 400°C. Many voids and hillocks were observed on their surfaces. This change of the fracture mode clearly indicates the improvement of the crystallographic quality of the annealed film. It was also observed that the stress-induced migration was activated substantially in the annealed film. Large voids and hillocks grew during the custody of the film even at room temperature without any application of current. This stress-induced migration was caused by the increase of residual tensile stress of about 200 MPa in the annealed film. It was also found that sulfur atoms segregated in the grown hillocks, though no sulfur atoms were found by EDX in the initial as-electroplated interconnections or other area in the annealed thin film interconnections. Thus, the hillock formation in the annealed interconnections was enhanced by the segregation of sulfur atoms. These sulfur atoms should have been introduced into the electroplated films during electroplating. Therefore, it is very important to control the micro texture, the residual stress and the concentration of sulfur in the electroplated copper thin film interconnections to assure the stable life, in other words, to eliminate their sudden brittle fracture and time-dependent degradation caused by the residual stress in the thin film interconnections.

Electron Microscopic Study of Nodules Formed during Electrodeposition of Copper on Aluminium

2015 ◽  
Vol 830-831 ◽  
pp. 371-374 ◽  
Author(s):  
Arun Augustin ◽  
K. Udaya Bhat ◽  
K. Rajendra Udupa ◽  
Ampar Chitharanjan Hegde
Keyword(s):  
Thin Film ◽  
Microscopic Study ◽  
Cross Section ◽  
Electron Microscopic Study ◽  
Current Density ◽  
Stacking Faults ◽  
Growth Behavior ◽  
Electron Microscopic ◽  
Copper Thin Film ◽  
Structural Details

Copper thin film was deposited on double zincated aluminium using electrodeposition route. To understand the growth behavior of copper nodules, deposition was done by varying coating current density. The topography and cross section of the coating was analyzed by using SEM. The structural details of copper nodules were studied by using TEM. Deposited copper thin film was made up of pomegranate like nodules with size varying from 5 μm to 8 μm, varying as a function of coating current density. At higher current density, the coating was made up of multiple layers of nodules having defects like twins, dislocations and stacking faults. The nodules had fine crystallites of size in the range of 50 nm.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

CVD copper thin film deposition using (α-methylstyrene)Cu(I)(hfac)

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-553-Pr3-560 ◽  
Author(s):  
W. Zhuang ◽  
L. J. Charneski ◽  
D. R. Evans ◽  
S. T. Hsu ◽  
Z. Tang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Copper Thin Film

High Current Density Effect on In-situ Atomic Migration Characteristics of a BiTe Thin Film System

2013 ◽  
Vol 52 (10S) ◽  
pp. 10MC06
Author(s):  
Seunghyun Kim ◽  
Yong-Jin Park ◽  
Young-Chang Joo ◽  
Young-Bae Park
Keyword(s):  
Thin Film ◽  
Current Density ◽  
High Current Density ◽  
Density Effect ◽  
Film System ◽  
High Current ◽  
Thin Film System

Submerged Jet Impingement Cooling of a Nanostructured Plate

2010 ◽  
Author(s):  
Muhsincan Sesen ◽  
Ali Kosar ◽  
Ebru Demir ◽  
Evrim Kurtoglu ◽  
Nazli Kaplan ◽  
...  
Keyword(s):  
Thin Film ◽  
Heat Transfer ◽  
Heat Flux ◽  
Silicon Wafer ◽  
Heat Removal ◽  
Jet Impingement ◽  
Wafer Surface ◽  
Small Scale ◽  
Copper Thin Film ◽  
Thin Film Layer

In this paper, the results of a series of heat transfer experiments conducted on a compact electronics cooling device based on single phase jet impingement techniques are reported. Deionized-water is propelled into four microchannels of inner diameter 685 μm which are used as nozzles and located at a nozzle to surface distance of 2.5mm. The generated jet impingement is targeted through these channels towards the surface of a nanostructured plate. This plate of size 20mmx20mm consisted of ∼600 nm long copper nanorod arrays with an average nanorod diameter of ∼150 nm, which were integrated on top of a silicon wafer substrate coated with a copper thin film layer (i.e. Cu-nanorod/Cu-film/Silicon-wafer). Heat removal characteristics induced through jet impingement are investigated using the nanostructured plate and compared to results obtained from a flat plate of copper thin film coated on silicon wafer surface. Enhancement in heat transfer up to 15% using the nanostructured plate has been reported in this paper. Heat generated by small scale electronic devices is simulated using a thin film heater placed on an aluminum base. Surface temperatures are recorded by a data acquisition system with the thermocouples integrated on the surface at various locations. Constant heat flux provided by the film heater is delivered to the nanostructured plate placed on top of the base. Volumetric flow rate and heat flux values were varied in order to better characterize the potential enhancement in heat transfer by nanostructured surfaces.

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