High-temperature measurement techniques for the application in photometry, radiometry and thermometry

2009 ◽  
Vol 469 (5-6) ◽  
pp. 205-269 ◽  
Author(s):  
J HARTMANN
Keyword(s):  
High Temperature ◽  
Temperature Measurement ◽  
Measurement Techniques ◽  
High Temperature Measurement

Development of Ultrasonic Temperature Sensors for Ultra-High Temperature Measurement in Nuclear Reactor Vessel

2002 ◽  
Author(s):  
Kil-Mo Koo ◽  
Kwang-Soon Ha ◽  
Rae-Joon Park ◽  
Sang-Baik Kim ◽  
Hee-Dong Kim ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Measurement ◽  
Optimization Design ◽  
Nuclear Reactor ◽  
Initial Conditions ◽  
Measurement Techniques ◽  
Gap Formation ◽  
Melt Temperature ◽  
Infrared Thermometry ◽  
High Temperature Measurement

The temperature measurement of a very high temperature core melt is of importance in LAVA (lower-plenum Arrested Vessel Attack) experiment in which gap formation between core melt and the reactor lower head, and the effect of the gap on thermal behavior are to be measured. The existing temperature measurement techniques have some problems, where the thermocouple, one of the contact methods, is restricted to under 2000°C, and the infrared thermometry, one of the non-contact methods, is unable to measure an internal temperature and very sensitive to the interference from reacted gases. So, in order to solve these problems, the delay time of ultrasonic wavelets due to high temperature is suggested. One of the key initial conditions to be measured in LAVA is the initial corium melt temperature. To measure it, the LAVA measurement group has developed several kinds of UTS’s. As a first stage, a molten material temperature was measured up to 2314°C. Also, the optimization design of the UTS (ultrasonic temperature sensor) with persistence at the high temperature was suggested in this paper. And the utilization of the theory suggested in this paper and the efficiency of the developed system are certified by performing experiments.

Study on characteristics of schottky temperature detector based on metal/n-ZnO/n-Si structures

2020 ◽  
Vol 12 ◽  
Author(s):  
Fang Wang ◽  
Jingkai Wei ◽  
Caixia Guo ◽  
Tao Ma ◽  
Linqing Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Measurement ◽  
Temperature Response ◽  
Large Temperature ◽  
Mems Devices ◽  
Temperature Range ◽  
Response Characteristics ◽  
High Temperature Measurement ◽  
Temperature Detector ◽  
Schottky Structure

Background: At present, the main problems of Micro-Electro-Mechanical Systems (MEMS) temperature detector focus on the narrow range of temperature detection, difficulty of the high temperature measurement. Besides, MEMS devices have different response characteristics for various surrounding temperature in the petrochemical and metallurgy application fields with high-temperature and harsh conditions. To evaluate the performance stability of the hightemperature MEMS devices, the real-time temperature measurement is necessary. Objective: A schottky temperature detector based on the metal/n-ZnO/n-Si structures is designed to measure high temperature (523~873K) for the high-temperature MEMS devices with large temperature range. Method: By using the finite element method (FEM), three different work function metals (Cu, Ni and Pt) contact with the n-ZnO are investigated to realize Schottky. At room temperature (298K) and high temperature (523~873K), the current densities with various bias voltages (J-V) are studied. Results: The simulation results show that the high temperature response power consumption of three schottky detectors of Cu, Ni and Pt decreases successively, which are 1.16 mW, 63.63 μW and 0.14 μW. The response temperature sensitivities of 6.35 μA/K, 0.78 μA/K, and 2.29 nA/K are achieved. Conclusion: The Cu/n-ZnO/n-Si schottky structure could be used as a high temperature detector (523~873K) for the hightemperature MEMS devices. It has a large temperature range (350K) and a high response sensitivity is 6.35 μA/K. Compared with traditional devices, the Cu/n-ZnO/n-Si Schottky structure based temperature detector has a low energy consumption of 1.16 mW, which has potential applications in the high-temperature measurement of the MEMS devices.

scholarly journals Miniaturized fiber taper reflective interferometer for high temperature measurement

2010 ◽  
Vol 18 (13) ◽  
pp. 14245 ◽  
Author(s):  
Jun-long Kou ◽  
Jing Feng ◽  
Liang Ye ◽  
Fei Xu ◽  
Yan-qing Lu
Keyword(s):  
High Temperature ◽  
Temperature Measurement ◽  
High Temperature Measurement ◽  
Fiber Taper
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