Nanoscale imaging of ferroelectric domain and resistance switching in hybrid improper ferroelectric Ca3Ti2O7 thin films

2020 ◽  
Vol 384 (25) ◽  
pp. 126609 ◽  
Author(s):  
Y. Shi ◽  
S.Y. Wang ◽  
S. Ma ◽  
Y.L. Lei ◽  
H.L. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Domain ◽  
Resistance Switching ◽  
Nanoscale Imaging

Ferroelectric domain structure of NaNbO3epitaxial thin films grown on (110) DyScO3substrates

2014 ◽  
Vol 8 (6) ◽  
pp. 522-526 ◽  
Author(s):  
Martin Schmidbauer ◽  
Jan Sellmann ◽  
Dorothee Braun ◽  
Albert Kwasniewski ◽  
Andreas Duk ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Ferroelectric Domain ◽  
Ferroelectric Domain Structure

Fabrication and Resistance-Switching Behaviors of NiO Thin Films by Thermal Oxidation of Evaporated Ni Films

2009 ◽  
Vol 66 ◽  
pp. 131-134
Author(s):  
X. Cao ◽  
Xiao Min Li ◽  
Wei Dong Yu ◽  
Rui Yang ◽  
Xin Jun Liu
Keyword(s):  
Thin Films ◽  
Thermal Oxidation ◽  
Resistive Switching ◽  
Resistance Switching ◽  
Si Substrates ◽  
Current Compliance

Polycrystalline NiO thin films were fabricated on Pt (111)/Ti/SiO2/Si substrates by thermal oxidation of the evaporated Ni films. Pt/NiO/Pt structures were prepared, and they showed reversible resistance switching behaviors. When the compliance set current was varied from 5 mA to 40 mA, the on-state currents increased, while the on-state resistances decreased. It is probably attributed to higher current compliance resulted in the formation of stronger and less resistive filaments, which in turn need more energy and power for their rupture. The resistive switching in NiO thin films is closely related to the formation and rupture of conducting filaments.

Three-dimensional ferroelectric domain imaging of epitaxial BiFeO3 thin films using angle-resolved piezoresponse force microscopy

2010 ◽  
Vol 97 (11) ◽  
pp. 112907 ◽  
Author(s):  
Moonkyu Park ◽  
Seungbum Hong ◽  
Jeffrey A. Klug ◽  
Michael J. Bedzyk ◽  
Orlando Auciello ◽  
...  
Keyword(s):  
Thin Films ◽  
Three Dimensional ◽  
Piezoresponse Force Microscopy ◽  
Ferroelectric Domain ◽  
Force Microscopy ◽  
Bifeo3 Thin Films

Resistance switching in perovskite thin films

2006 ◽  
Vol 243 (9) ◽  
pp. 2089-2097 ◽  
Author(s):  
A. Ignatiev ◽  
N. J. Wu ◽  
X. Chen ◽  
S. Q. Liu ◽  
C. Papagianni ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistance Switching

In situ X-ray diffraction study of the controlled oxidation and reduction in the V–O system for the synthesis of VO2 and V2O3 thin films

2015 ◽  
Vol 3 (43) ◽  
pp. 11357-11365 ◽  
Author(s):  
Geert Rampelberg ◽  
Bob De Schutter ◽  
Wouter Devulder ◽  
Koen Martens ◽  
Iuliana Radu ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffraction Study ◽  
Resistance Switching ◽  
X Ray Diffraction ◽  
X Ray

VO2 and V2O3 thin films were prepared during in situ XRD investigation by oxidation and reduction of V and V2O5. Films show up to 5 orders of magnitude resistance switching.

Resistance switching in polycrystalline BiFeO3 thin films

2010 ◽  
Vol 97 (4) ◽  
pp. 042101 ◽  
Author(s):  
Kuibo Yin ◽  
Mi Li ◽  
Yiwei Liu ◽  
Congli He ◽  
Fei Zhuge ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistance Switching ◽  
Bifeo3 Thin Films

Temperature Dependence of Resistance Switching in Cr Doped SrZrO3 Thin Films

2007 ◽  
Vol 51 (3) ◽  
pp. 1089 ◽  
Author(s):  
Mooyoung Kim ◽  
Hyungsang Kim ◽  
Yongmin Kim ◽  
Woong Jung ◽  
Hyunsik Im ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Resistance Switching

Reproducible resistance switching for BaTiO3 thin films fabricated by RF-magnetron sputtering

2011 ◽  
Vol 519 (10) ◽  
pp. 3291-3294 ◽  
Author(s):  
Chang Hwa Jung ◽  
Seong Ihl Woo ◽  
Yun Seok Kim ◽  
Kwang Soo No
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Resistance Switching
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