Study on the properties of Pb(Zr,Ti)O3 thin films grown alternately by pulsed laser deposition and sol-gel method

2020 ◽  
Vol 384 (11) ◽  
pp. 126232
Author(s):  
Peng Shi ◽  
Yan Yang ◽  
Huisen Li ◽  
Zhiqiu Zou ◽  
Benpeng Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Sol Gel ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Gel Method ◽  
Sol Gel Method

Fluorescence of Cr3+ doped alumina optical waveguides prepared by pulsed laser deposition and sol–gel method

2000 ◽  
Vol 87-89 ◽  
pp. 1087-1089 ◽  
Author(s):  
A Pillonnet ◽  
C Garapon ◽  
C Champeaux ◽  
C Bovier ◽  
H Jaffrezic ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Optical Waveguides ◽  
Sol Gel ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Gel Method ◽  
Sol Gel Method

Pulsed Laser Deposition of SrBi2Ta2O9 Thin Films for Nonvolatile Memory Applications

1995 ◽  
Vol 397 ◽  
Author(s):  
S. Werner ◽  
D. Thomas ◽  
S.K. Streiffer ◽  
O. Auciello ◽  
Angus I. Kingon
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Nonvolatile Memory ◽  
Elevated Temperatures ◽  
Sol Gel ◽  
Pulsed Laser ◽  
Hysteresis Loops ◽  
Laser Deposition ◽  
Polarization Electric Field ◽  
Memory Applications

ABSTRACTFerroelectric SrBi2Ta2U9 (SBT) thin films were synthesized by pulsed laser deposition (PLD) on platinized silicon substrates held at different substrate temperatures, from targets with different compositions. It was necessary to anneal films deposited at low temperature (525°C) at elevated temperatures in an oxygen atmosphere in order to achieve properties comparable to SBT thin films grown by the sol-gel technique. Polarization – electric field hysteresis loops showed saturation in the 2-5 V range with a remnant polarization 2Pr = 8-13 µC/cm2. Capacitors showed negligible fatigue up to 1010 switching cycles.

Low Temperature Preparation of Sr2(Ta1-x, Nbx)2O7 Ferroelectric Thin Film by Pulsed Laser Deposition

1999 ◽  
Vol 596 ◽  
Author(s):  
Minoru Noda ◽  
Toshiyuki Nakaiso ◽  
Hideki Sugiyama ◽  
Masanori Okuyama
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pulsed Laser ◽  
Target Material ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Low Temperature Preparation

AbstractPreferentially (151)-oriented Sr2(Ta1-x, Nbx)2O7 (STN) thin films on Pt have been prepared at temperatures as low as 550 and 600°C, in O2 and N2O atmospheres, respectively, by pulsed laser deposition (PLD). The temperatures are significantly lower than those prepared by sol-gel methods, where 950°C was reported. These are the lowest growth temperatures of crystalline STN thin films. Composition ratio (x) in the target material was determined to be around 0.3 from measurement of the Curie temperature and ferroelectric properties. Active oxygen generated by laser irradiation in ambient O2 or N2O atmosphere is found to be very effective for chemical reaction, and decreases the growth temperature of crystalline STN films. It is also confirmed by surface AFM and cross-sectional SEM observations that the film has a columnar-shaped structure with grain size ranging from 50 to 100 nm. Remanent polarization (Pr) and coercive field (Ec) are 0.4μ C/cm2 and 30 kV/cm, respectively. Finally, we expect the low temperature STN film prepared by PLD to be a promising ferroelectric for the application in ferroelectric memory FETs.

scholarly journals Sol-Gel Derived La0.7Sr0.3MnO3 Thin Films by Pulsed Laser Deposition

2016 ◽  
Vol 6 (5) ◽  
Author(s):  
A. A. El-Aziem ◽  
Y. Badr ◽  
K. M. El-Khatib ◽  
M. A. Hafez
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Sol Gel ◽  
Pulsed Laser ◽  
Laser Deposition

Synthesis of the Thermoelectric Thin Films of Ca3Co4O9 and Ca3Co2O6 Using Pulsed-Laser Deposition Techniques

2012 ◽  
Vol 531 ◽  
pp. 484-488
Author(s):  
Zhi Dong Li ◽  
Dong Wu ◽  
Kun Yu Zhao ◽  
Hui Zhang
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Sol Gel ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thermoelectric Thin Films ◽  
Ceramic Targets ◽  
Deposition Techniques

Thermoelectric ceramic targets of Ca3Co4O9and Ca3Co2O6were prepared by the sol-gel method. The technology and mechanism of synthesizing the thermoelectric thin films of Ca3Co4O9and Ca3Co2O6were investigated. The thin films of Ca3Co4O9and Ca3Co2O6were grown on (0001)-oriented (c-cut) Al2O3substrates by pulsed-laser deposition techniques (PLD). Ca3Co4O9thin films grown at substrate temperature of 700°C and 800 °C appear to be obviously c-axis-oriented. But the x-ray diffraction peak of Ca3Co2O6thin films was not confirmed. Ca3Co4O9thin films and Ca3Co2O6thin films exhibited Ca elements and Co elements volatilization at high temperatures.

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