Effects of Zr and V additions on the stability and migration of He in bcc W: A first-principles study

2019 ◽  
Vol 383 (23) ◽  
pp. 2777-2783
Author(s):  
Ningning Zhang ◽  
Yujuan Zhang ◽  
Yu Yang ◽  
Ping Zhang ◽  
Changchun Ge
2016 ◽  
Vol 123 ◽  
pp. 85-92 ◽  
Author(s):  
Ruihuan Li ◽  
Pengbo Zhang ◽  
Xiaojie Li ◽  
Jianhua Ding ◽  
Yuanyuan Wang ◽  
...  

2021 ◽  
Vol 168 ◽  
pp. 112604
Author(s):  
Ruihuan Li ◽  
Xiaoxiao Cao ◽  
Dan Sun ◽  
Wei Feng ◽  
Sha Song ◽  
...  

2002 ◽  
Vol 65 (16) ◽  
Author(s):  
Shan-Ying Wang ◽  
Wenhui Duan ◽  
Dong-Liang Zhao ◽  
Chong-Yu Wang

2019 ◽  
Vol 963 ◽  
pp. 194-198
Author(s):  
Manesh V. Mistry ◽  
Jonathon Cottom ◽  
K. Patel ◽  
A.M. El-Sayed ◽  
Gregor Pobegen ◽  
...  

The NO anneal has been shown to effectively remove 99% of defects in SiC based devices. However, the details of interactions of NO molecules with amorphous (a)-SiO2 and SiC/SiO2 interface are still poorly understood. We use DFT simulations to investigate the NO incorporation energies in a-SiO2, and how these are affected by the steric environment. The results explain the ease with which NO molecules incorporate into a-SiO2 and give an insight into the diffusion paths they take during annealing. We highlight the importance of exhaustive sampling for exploring NO diffusion pathways.


Sign in / Sign up

Export Citation Format

Share Document