Thermal expansion induced reduction of lattice thermal conductivity in light crystals

2017 ◽  
Vol 381 (40) ◽  
pp. 3514-3518 ◽  
Author(s):  
Xiuxian Yang ◽  
Yinchang Zhao ◽  
Zhenhong Dai ◽  
Muhammad Zulfiqar ◽  
Jingzhong Zhu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermal Expansion ◽  
Lattice Thermal Conductivity

Thermal Expansion and Isotopic Composition Effects on Lattice Thermal Conductivities of Crystalline Silicon

2006 ◽  
Author(s):  
Yunfei Chen ◽  
Guodong Wang ◽  
Deyu Li ◽  
Jennifer R. Lukes
Keyword(s):  
Thermal Conductivity ◽  
Thermal Expansion ◽  
Md Simulation ◽  
Lattice Thermal Conductivity ◽  
Mass Difference ◽  
Dynamics Simulation ◽  
Temperature Range ◽  
Simulation Results ◽  
Callaway Model ◽  
Thermal Conductivities

Equilibrium molecular dynamics simulation is used to calculate lattice thermal conductivities of crystal silicon in the temperature range from 400K to 1600K. Simulation results confirmed that thermal expansion, which resulted in the increase of the lattice parameter, caused the decrease of the lattice thermal conductivity. The simulated results proved that thermal expansion imposed another type resistance on phonon transport in crystal materials. Isotopic and vacancy effects on lattice thermal conductivity are also investigated and compared with the prediction from the modified Debye Callaway model. It is demonstrated in the MD simulation results that the isotopic effect on lattice thermal conductivity is little in the temperature range from 400K to 1600K for isotopic concentration below 1%, which implies the isotopic scattering on phonon due to mass difference can be neglected over the room temperature. The remove of atoms from the crystal matrix caused mass difference and elastic strain between the void and the neighbor atoms, which resulted in vacancy scattering on phonons. Simulation results demonstrated this mechanism is stronger than that caused by isotopic scattering on phonons due to mass difference. A good agreement is obtained between the MD simulation results of silicon crystal with vacancy defects and the data predicted from the modified Debye Callaway model. This conclusion is helpful to demonstrate the validity of Klemens' Rayleigh model for impurity scattering on phonons.

scholarly journals Thermal expansion and impurity effects on lattice thermal conductivity of solid argon

2004 ◽  
Vol 120 (8) ◽  
pp. 3841-3846 ◽  
Author(s):  
Yunfei Chen ◽  
Jennifer R. Lukes ◽  
Deyu Li ◽  
Juekuan Yang ◽  
Yonghua Wu
Keyword(s):  
Thermal Conductivity ◽  
Thermal Expansion ◽  
Lattice Thermal Conductivity ◽  
Impurity Effects ◽  
Solid Argon

scholarly journals Ultra-high lattice thermal conductivity and the effect of pressure in superhard hexagonal BC2N

2020 ◽  
Vol 8 (44) ◽  
pp. 15705-15716
Author(s):  
Safoura Nayeb Sadeghi ◽  
S. Mehdi Vaez Allaei ◽  
Mona Zebarjadi ◽  
Keivan Esfarjani
Keyword(s):  
Thermal Conductivity ◽  
Thermal Expansion ◽  
First Principles ◽  
Heat Sink ◽  
Lattice Thermal Conductivity ◽  
Electronic Devices ◽  
Thermomechanical Properties ◽  
High Thermal Conductivity ◽  
Effect Of Pressure

Using first-principles methods to calculate thermomechanical properties of BC2N, we investigate the effect of pressure on its high thermal conductivity and show that its thermal expansion matches that of Si, making it a good candidate as a heat sink for electronic devices.

Lattice Thermal Conductivity Modelling of a Diatomic Nanoscale Material

2020 ◽  
Vol 10 (5) ◽  
pp. 602-609
Author(s):  
Adil H. Awad
Keyword(s):  
Thermal Conductivity ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Correction Term ◽  
Nanoscale Material ◽  
New Approach ◽  
Two Samples ◽  
Conductivity Modelling ◽  
Callaway Model

Introduction: A new approach for expressing the lattice thermal conductivity of diatomic nanoscale materials is developed. Methods: The lattice thermal conductivity of two samples of GaAs nanobeam at 4-100K is calculated on the basis of monatomic dispersion relation. Phonons are scattered by nanobeam boundaries, point defects and other phonons via normal and Umklapp processes. Methods: A comparative study of the results of the present analysis and those obtained using Callaway formula is performed. We clearly demonstrate the importance of the utilised scattering mechanisms in lattice thermal conductivity by addressing the separate role of the phonon scattering relaxation rate. The formulas derived from the correction term are also presented, and their difference from Callaway model is evident. Furthermore their percentage contribution is sufficiently small to be neglected in calculating lattice thermal conductivity. Conclusion: Our model is successfully used to correlate the predicted lattice thermal conductivity with that of the experimental observation.

scholarly journals Local ferroelectric polarization switching driven by nanoscale distortions in thermoelectric $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aastha Vasdev ◽  
Moinak Dutta ◽  
Shivam Mishra ◽  
Veerpal Kaur ◽  
Harleen Kaur ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Direct Evidence ◽  
Temperature Dependent ◽  
Force Microscopy ◽  
Ferroelectric Domains ◽  
Pdf Analysis ◽  
Ferroelectric Transition Temperature

AbstractA remarkable decrease in the lattice thermal conductivity and enhancement of thermoelectric figure of merit were recently observed in rock-salt cubic SnTe, when doped with germanium (Ge). Primarily, based on theoretical analysis, the decrease in lattice thermal conductivity was attributed to local ferroelectric fluctuations induced softening of the optical phonons which may strongly scatter the heat carrying acoustic phonons. Although the previous structural analysis indicated that the local ferroelectric transition temperature would be near room temperature in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te , a direct evidence of local ferroelectricity remained elusive. Here we report a direct evidence of local nanoscale ferroelectric domains and their switching in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te using piezoeresponse force microscopy(PFM) and switching spectroscopy over a range of temperatures near the room temperature. From temperature dependent (250–300 K) synchrotron X-ray pair distribution function (PDF) analysis, we show the presence of local off-centering distortion of Ge along the rhombohedral direction in global cubic $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te . The length scale of the $${\text {Ge}}^{2+}$$ Ge 2 + off-centering is 0.25–0.10 Å near the room temperatures (250–300 K). This local emphatic behaviour of cation is the cause for the observed local ferroelectric instability, thereby low lattice thermal conductivity in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te .

Study of lattice thermal conductivity of tungsten containing bubbles by molecular dynamics simulation

2020 ◽  
Vol 161 ◽  
pp. 112004
Author(s):  
Hongyu Zhang ◽  
Jizhong Sun ◽  
Yingmin Wang ◽  
Thomas Stirner ◽  
Ali Y. Hamid ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Lattice Thermal Conductivity ◽  
Dynamics Simulation
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