Effects of an external electric field on electronic states and transport of a Bi 2 Se 3 thin film

2016 ◽  
Vol 380 (43) ◽  
pp. 3650-3654 ◽  
Author(s):  
Genhua Liu ◽  
Benliang Zhou ◽  
Guanghui Zhou
ACS Omega ◽  
2018 ◽  
Vol 3 (8) ◽  
pp. 8683-8690 ◽  
Author(s):  
Tássia Karina Walter ◽  
Cecília Fabiana da Gama Ferreira ◽  
Jorge Iulek ◽  
Elaine Machado Benelli

2022 ◽  
Vol 2 ◽  

Although the screening of an external electric field, strongly influences the electronic states of two-dimensional material stack, it is not well understood. Magnetotransport measurements of twisted double bilayer graphene uncovered the screening of atomic layers.


2018 ◽  
Vol 457 ◽  
pp. 97-102 ◽  
Author(s):  
K. Nakamura ◽  
A.-M. Pradipto ◽  
T. Akiyama ◽  
T. Ito ◽  
T. Oguchi ◽  
...  

2019 ◽  
Vol 33 (26) ◽  
pp. 1950301 ◽  
Author(s):  
Yu Liu ◽  
Youbin Yu

Electric field influences on the electronic states and the optical absorption in an asymmetrical quantum well with semiparabolic potential are investigated. The formula for the absorption coefficients in this asymmetrical quantum well with electric field are deduced by applying iterative method and density-matrix approach. The results are discussed with GaAs/AlGaAs materials and show that the external electric field has a significant effect on the electronic states and absorption coefficients of asymmetric quantum wells.


2009 ◽  
Vol 421-422 ◽  
pp. 107-110
Author(s):  
Takeshi Yokota ◽  
Shotaro Murata ◽  
Shinya Kito ◽  
Manabu Gomi

We have investigated the relationships between the electric field-induced resistance change and the strength of the exchange interaction of the Cr2O3/ La0.7Sr0.3MnO3 (LSMO) magnetic hetero system. The hetero system subjected to field cooling (FC) showed a positive shift in the magnetization curves due to an exchange bias. The exchange bias field changed depending on the FC field. Resulting from the exchange behaviors, the resistance of LSMO film was changed by the application of an electric field to the Cr2O3 gate. This resistance change is more likely due to the interface interaction strength between the Cr2O3 and LSMO film


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