scholarly journals Unconventional drop in the electrical resistance of chromium metal thin films at low temperature

2016 ◽  
Vol 380 (38) ◽  
pp. 3133-3137 ◽  
Author(s):  
M. Ohashi ◽  
K. Ohashi ◽  
M. Sawabu ◽  
M. Miyagawa ◽  
T. Kubota ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electrical Resistance ◽  
Metal Thin Films

P‐196: Late‐News‐Poster: Low‐Temperature All Sputter IGZO‐TFT Fabricated with Amorphous Metal Thin‐Films

2020 ◽  
Vol 51 (1) ◽  
pp. 1400-1403
Author(s):  
Dylan River Kearney ◽  
Jose Eduardo Mendez ◽  
Sarah R. Self ◽  
Jason P. Anderson ◽  
Sean W. Muir
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Amorphous Metal ◽  
Metal Thin Films ◽  
Late News ◽  
Igzo Tft

Low Temperature, Selective Atomic Layer Deposition of Nickel Metal Thin Films

2018 ◽  
Vol 10 (16) ◽  
pp. 14200-14208 ◽  
Author(s):  
Marissa M. Kerrigan ◽  
Joseph P. Klesko ◽  
Kyle J. Blakeney ◽  
Charles H. Winter
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Nickel Metal ◽  
Metal Thin Films ◽  
Layer Deposition

Low-Temperature Atomic Layer Deposition of Copper Metal Thin Films: Self-Limiting Surface Reaction of Copper Dimethylamino-2-propoxide with Diethylzinc

2009 ◽  
Vol 121 (25) ◽  
pp. 4606-4609 ◽  
Author(s):  
Byoung H. Lee ◽  
Jae K. Hwang ◽  
Jae W. Nam ◽  
Song U. Lee ◽  
Jun T. Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Surface Reaction ◽  
Atomic Layer ◽  
Copper Metal ◽  
Metal Thin Films ◽  
Layer Deposition ◽  
Limiting Surface

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Observation by HVEM of the martensite transformation and the superconducting transition in Nb3Sn

1988 ◽  
Vol 46 ◽  
pp. 788-789
Author(s):  
M. A. Kirk ◽  
M. C. Baker ◽  
B. J. Kestel ◽  
H. W. Weber
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Superconducting State ◽  
Martensite Transformation ◽  
Sputter Deposition ◽  
Diffusion Reaction ◽  
Solute Diffusion ◽  
Superconducting Transition ◽  
Twin Boundaries ◽  
Martensite Structure

It is well known that a number of compound superconductors with the A15 structure undergo a martensite transformation when cooled to the superconducting state. Nb3Sn is one of those compounds that transforms, at least partially, from a cubic to tetragonal structure near 43 K. To our knowledge this transformation in Nb3Sn has not been studied by TEM. In fact, the only low temperature TEM study of an A15 material, V3Si, was performed by Goringe and Valdre over 20 years ago. They found the martensite structure in some foil areas at temperatures between 11 and 29 K, accompanied by faults that consisted of coherent twin boundaries on {110} planes. In pursuing our studies of irradiation defects in superconductors, we are the first to observe by TEM a similar martensite structure in Nb3Sn.Samples of Nb3Sn suitable for TEM studies have been produced by both a liquid solute diffusion reaction and by sputter deposition of thin films.

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