Electrical control of valley and spin polarized current and tunneling magnetoresistance in a silicene-based magnetic tunnel junction

2014 ◽  
Vol 378 (34) ◽  
pp. 2557-2560 ◽  
Author(s):  
Dali Wang ◽  
Guojun Jin
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Tunneling Magnetoresistance ◽  
Electrical Control ◽  
Spin Polarized

Large magnetoresistance and spin-polarized photocurrent in La2/3Sr1/3MnO3(Co)/quaterthiophene/La2/3Sr1/3MnO3 organic magnetic tunnel junctions

2019 ◽  
Vol 7 (14) ◽  
pp. 4079-4088 ◽  
Author(s):  
Xuefei Han ◽  
Wenbo Mi ◽  
Xiaocha Wang
Keyword(s):  
Tunnel Junction ◽  
Tunnel Junctions ◽  
Spin Injection ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Tunnel Junction ◽  
Tunneling Magnetoresistance ◽  
Spin Polarized

Large tunneling magnetoresistance, perfect spin injection and fully spin-polarized photocurrent are realized in a LSMO/T4/LSMO organic magnetic tunnel junction.

scholarly journals Magnetization Dynamics in a Perpendicular Anisotropy Free Layer under a Spin Torque Effect with Crossed Polarization

2020 ◽  
Vol 25 (1) ◽  
pp. 54
Author(s):  
Nafeesa Rahman ◽  
Rachid Sbiaa
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Film Plane ◽  
Spin Torque ◽  
Spin Angular Momentum ◽  
Perpendicular Anisotropy ◽  
Free Layer ◽  
Magnetization Dynamics ◽  
Magnetization Direction ◽  
Spin Polarized

The transfer of spin angular momentum from a spin polarized current provides an efficient way of reversing the magnetization direction of the free layer of the magnetic tunnel junction (MTJ), and while faster reversal will reduce the switching energy, this in turn will lead to low power consumption. In this work, we propose a design where a spin torque oscillator (STO) is integrated with a conventional magnetic tunnel junction (MTJ) which will assist in the ultrafast reversal of the magnetization of the free layer of the MTJ. The structure formed (MTJ stacked with STO), will have the free layer of the MTJ sandwiched between two spin polarizer layers, one with a fixed magnetization direction perpendicular to film plane (main static polarizer) and the other with an oscillatory magnetization (dynamic polarizer). The static polarizer is the fixed layer of the MTJ itself and the dynamic polarizer is the free layer of the STO.

scholarly journals Bolometric Properties of a Spin-Torque Diode Based on a Magnetic Tunnel Junction

2019 ◽  
Vol 2019 ◽  
pp. 1-9 ◽  
Author(s):  
G. D. Demin ◽  
K. A. Zvezdin ◽  
A. F. Popkov
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Nonuniform Heating ◽  
Spin Torque ◽  
Rectification Effect ◽  
Wide Range ◽  
Spin Polarized ◽  
Potential Applications ◽  
Dynamic Components ◽  
Bolometric Effect

Spin caloritronics opens up a wide range of potential applications, one of which can be the thermoelectric rectification of a microwave signal by spin-diode structures. The bolometric properties of a spin-torque diode based on a magnetic tunnel junction (MTJ) in the presence of a thermal gradient through a tunnel junction are discussed. Theoretical estimates of the static and dynamic components of the microwave sensitivity of the spin-torque diode, related to thermoelectric tunnel magneto-Seebeck effect and the thermal transfer of spin angular momentum in the MTJ under nonuniform heating, are presented. Despite the fact that the thermal contribution to the microwave sensitivity of the spin-torque diode is found to be relatively small in relation to the rectification effect related to the modulation of the MTJ resistance by a microwave spin-polarized current, nevertheless, the considered bolometric effect can be successfully utilized in some real-world microwave applications.

scholarly journals Large Tunneling Magnetoresistance in VSe2/MoS2 Magnetic Tunnel Junction

2019 ◽  
Vol 11 (19) ◽  
pp. 17647-17653 ◽  
Author(s):  
Jiaqi Zhou ◽  
Junfeng Qiao ◽  
Chun-Gang Duan ◽  
Arnaud Bournel ◽  
Kang L. Wang ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Tunneling Magnetoresistance

Tunneling magnetoresistance of perpendicular magnetic tunnel junction using L10 FePt electrodes on MgO/CrRu/TiN under-layers

2014 ◽  
Vol 115 (17) ◽  
pp. 17C739
Author(s):  
Chang Soo Kim ◽  
Jin-Won Jung ◽  
Dooho Choi ◽  
Masashi Sahashi ◽  
Mark H. Kryder
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Tunneling Magnetoresistance

scholarly journals Picosecond Optospintronic Tunnel Junctions for Non-volatile Photonic Memories

2021 ◽  
Author(s):  
Luding Wang ◽  
Houyi Cheng ◽  
Pingzhi Li ◽  
Yang Liu ◽  
Youri van Hees ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junction ◽  
Data Access ◽  
Building Blocks ◽  
Spin Transfer Torque ◽  
Time Resolved ◽  
Physical Constraints ◽  
Spin Polarized ◽  
All Optical

Abstract Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolutionize the mainstream computing architecture. However, conventional switching mechanisms of such devices are fundamentally hindered by spin polarized currents, either spin transfer torque or spin orbit torque with spin precession time limitation and excessive power dissipation. These physical constraints significantly stimulate the advancement of modern spintronics. Here, we report an optospintronic tunnel junction using a photonic-spintronic combination. This composite device incorporates an all-optically switchable Co/Gd bilayer coupled to a CoFeB/MgO-based perpendicular magnetic tunnel junction by the Ruderman-Kittel-Kasuya-Yosida interaction. A picosecond all-optical operation of the optospintronic tunnel junction is explicitly confirmed by time-resolved measurements. Moreover, the device shows a considerable tunnel magnetoresistance and thermal stability. This proof-of-concept device represents an essential step towards ultrafast photonic memories with THz data access, as well as ultralow power consumption.

Tunneling magnetoresistance effect in MnGa based perpendicular magnetic tunnel junction with Fe/Co interlayer

2013 ◽  
Vol 114 (16) ◽  
pp. 163913 ◽  
Author(s):  
Qinli Ma ◽  
Shigemi Mizukami ◽  
Takahide Kubota ◽  
Xianmin Zhang ◽  
Atsushi Sugihara ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Tunneling Magnetoresistance ◽  
Magnetoresistance Effect
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