scholarly journals Long-range triplet Josephson current driven by the bias voltage

2014 ◽  
Vol 378 (30-31) ◽  
pp. 2263-2269
Author(s):  
Hao Meng ◽  
Xiuqiang Wu ◽  
Feng Mei
Keyword(s):  
Long Range ◽  
Bias Voltage ◽  
Josephson Current

scholarly journals Long-range Josephson effect controlled by temperature gradient and circuit topology

2021 ◽  
Author(s):  
Mikhail S. Kalenkov ◽  
Andrei D. Zaikin
Keyword(s):  
Temperature Gradient ◽  
Long Range ◽  
Josephson Effect ◽  
Josephson Current ◽  
Hybrid Nanostructures ◽  
Proper Choice ◽  
Circuit Topology ◽  
System Geometry ◽  
Non Equilibrium

AbstractWe demonstrate that the supercurrent can be strongly enhanced in cross-like superconducting hybrid nanostructures (X-junctions) exposed to a temperature gradient. At temperatures T exceeding the Thouless energy of our X-junction, the Josephson current decays algebraically with increasing T and can be further enhanced by a proper choice of the circuit topology. At large values of the temperature gradient, the non-equilibrium contribution to the supercurrent may become as large as the equilibrium one at low T. We also predict a variety of transitions between 0- and $$\pi $$ π -junction states controlled by the temperature gradient as well as by the system geometry. Our predictions can be directly verified in modern experiments.

scholarly journals Long range triplet Josephson current and 0−πtransitions in tunable domain walls

2014 ◽  
Vol 16 (9) ◽  
pp. 093048 ◽  
Author(s):  
Thomas E Baker ◽  
Adam Richie-Halford ◽  
Andreas Bill
Keyword(s):  
Long Range ◽  
Domain Walls ◽  
Josephson Current

Field Induced Dielectric Properties of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 Thin Films

2002 ◽  
Vol 748 ◽  
Author(s):  
Apurba Laha ◽  
S. Saha ◽  
S. B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Long Range ◽  
Bias Voltage ◽  
Frequency Dispersion ◽  
Dielectric Maximum ◽  
Diffused Phase Transition ◽  
Relaxor Property

ABSTRACTDC electric field induced dielectric properties of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) thin films were studied as a function of frequency at different temperatures. It was observed that the dielectric constant (ε) and dissipation factor (tanδ) were decreased in presence of bias field. The temperature of dielectric maxima was found to increase with increasing bias level. The low temperature (<Tm) frequency dispersion of dielectric permittivity was suppressed with the application of dc bias. After a certain bias voltage the relaxor property of films was disappeared i.e. the films exhibited normal ferroelectric behavior. Since the absence of long range interaction among the nanopolar clusters in PMN and its family is believed to be the origin of relaxor behavior, disappearance of relaxor nature in PMN-PT (70/30) films could be attributed to manifestation of long-range order at higher bias voltage. This was observed in the temperature dependence of dielectric constant i.e. the films neither exhibited any frequency dispersion in the temperature of dielectric maximum (Tm) nor showed any diffused phase transition. The relaxor property of PMN-PT thin films was studied in terms of diffused phase transition together with frequency dispersion of the temperature of dielectric maximum (Tm). Vogel-Fulcher relation was used to analyze the frequency dependence of temperature of dielectric maximum.

scholarly journals Long-range triplet Josephson current modulated by the interface magnetization texture

2013 ◽  
Vol 104 (3) ◽  
pp. 37003 ◽  
Author(s):  
Hao Meng ◽  
Xiuqiang Wu ◽  
Zhiming Zheng
Keyword(s):  
Long Range ◽  
Josephson Current

New type electron gun with electrostatic and electromagnetic lenses

1978 ◽  
Vol 36 (1) ◽  
pp. 62-63
Author(s):  
T. Ichinokawa ◽  
H. Maeda
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Optimum Condition ◽  
Bias Voltage ◽  
Electron Gun ◽  
Charge Effect ◽  
Micro Fabrication ◽  
Maximum Brightness ◽  
New Type ◽  
The Ideal

I. IntroductionThermionic electron gun with the Wehnelt grid is popularly used in the electron microscopy and electron beam micro-fabrication. It is well known that this gun could get the ideal brightness caluculated from the Lengumier and Richardson equations under the optimum condition. However, the design and ajustment to the optimum condition is not so easy. The gun has following properties with respect to the Wehnelt bias; (1) The maximum brightness is got only in the optimum bias. (2) In the larger bias than the optimum, the brightness decreases with increasing the bias voltage on account of the space charge effect. (3) In the smaller bias than the optimum, the brightness decreases with bias voltage on account of spreading of the cross over spot due to the aberrations of the electrostatic immersion lens.In the present experiment, a new type electron gun with the electrostatic and electromagnetic lens is designed, and its properties are examined experimentally.

UHV-STM studies of silicon nano-pyramid growth on silicon surface at high temperature

1992 ◽  
Vol 50 (2) ◽  
pp. 1144-1145
Author(s):  
T. Sato ◽  
S. Kitamura ◽  
T. Sueyoshl ◽  
M. Iwatukl ◽  
C. Nielsen
Keyword(s):  
High Temperature ◽  
Relaxation Process ◽  
Thermal Effect ◽  
Bias Voltage ◽  
Silicon Surface ◽  
Growth Process ◽  
Tunneling Current ◽  
Fabrication Technique ◽  
Nano Fabrication ◽  
Electromigration Effect

Recently, the growth process and relaxation process of crystalline structures were studied by observing a SI nano-pyramid which was built on a Si surface with a UHV-STM. A UHV-STM (JEOL JSTM-4000×V) was used for studying a heated specimen, and the specimen was kept at high temperature during observation. In this study, the nano-fabrication technique utilizing the electromigration effect between the STM tip and the specimen was applied. We observed Si atoms migrated towords the tip on a high temperature Si surface.Clean surfaces of Si(lll)7×7 and Si(001)2×l were prepared In the UHV-STM at a temperature of approximately 600 °C. A Si nano-pyramid was built on the Si surface at a tunneling current of l0nA and a specimen bias voltage of approximately 0V in both polarities. During the formation of the pyramid, Images could not be observed because the tip was stopped on the sample. After the formation was completed, the pyramid Image was observed with the same tip. After Imaging was started again, the relaxation process of the pyramid started due to thermal effect.

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