Valley polarized electronic transport through a line defect in graphene: An analytical approach based on tight-binding model

2011 ◽  
Vol 376 (2) ◽  
pp. 136-141 ◽  
Author(s):  
Liwei Jiang ◽  
Xiaoling Lv ◽  
Yisong Zheng
1982 ◽  
Vol 20 ◽  
Author(s):  
Ian L. Spain ◽  
Kenneth J. Volin

ABSTRACTCalculations of the magnetoresistance of graphite acceptor compounds are made using a tight binding model for the carrier dispersion proposed by Blinowski et al, and measured values of the zero-field resistivity. It is shown that, if a reasonable physical model is used for the mobilities, the magnetoresistance cannot be fitted with two- or three-carrier models. Suggestions for the origin of the magnetoresistance are made.


2007 ◽  
Vol 06 (06) ◽  
pp. 415-422 ◽  
Author(s):  
SANTANU K. MAITI

The electronic transport characteristics through a single phenalenyl molecule sandwiched between two metallic electrodes are investigated by using Green's function technique. A parametric approach, based on the tight-binding model, is used to study the transport characteristics through such molecular bridge system. The electronic transport properties are significantly influenced by (a) the molecule-to-electrodes interface structure and (b) the molecule-to-electrodes coupling strength.


AIP Advances ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 015127
Author(s):  
Qiuyuan Chen ◽  
Jiawei Chang ◽  
Lin Ma ◽  
Chenghan Li ◽  
Liangfei Duan ◽  
...  

2021 ◽  
Vol 154 (16) ◽  
pp. 164115
Author(s):  
Rebecca K. Lindsey ◽  
Sorin Bastea ◽  
Nir Goldman ◽  
Laurence E. Fried

2005 ◽  
Vol 31 (8) ◽  
pp. 585-595 ◽  
Author(s):  
D. A. Areshkin ◽  
O. A. Shenderova ◽  
J. D. Schall ◽  
D. W. Brenner

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