Raman spectroscopy and Fermi resonance in Mn-doped ZnO bulk single crystal

2010 ◽  
Vol 374 (39) ◽  
pp. 4054-4056 ◽  
Author(s):  
B.N. Mavrin ◽  
L.N. Demyanets ◽  
R.M. Zakalukin
2007 ◽  
Vol 24 (12) ◽  
pp. 3499-3501 ◽  
Author(s):  
He Qing-Bo ◽  
Xu Jia-Yue ◽  
Li Xin-Hua ◽  
A Kamzin ◽  
L Kamzina

2008 ◽  
Vol 103 (7) ◽  
pp. 07D128 ◽  
Author(s):  
J. C. A. Huang ◽  
H. S. Hsu ◽  
J. H. Sun ◽  
S. L. Chiu ◽  
C. H. Lee ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7435
Author(s):  
Zitao Shi ◽  
Qilong Yuan ◽  
Yuezhong Wang ◽  
Kazuhito Nishimura ◽  
Guojian Yang ◽  
...  

Bulk diamonds show great potential for optical applications such as for use in infrared (IR) windows and temperature sensors. The development of optical-grade bulk diamond synthesis techniques has facilitated its extreme applications. Here, two kinds of bulk single-crystal diamonds, a high-pressure and high-temperature (HPHT) diamond and a chemical vapor deposition (CVD) diamond, were evaluated by Raman spectroscopy and Fourier Transform Infra-Red (FTIR) spectroscopy at a range of temperatures from 80 to 1200 K. The results showed that there was no obvious difference between the HPHT diamond and the CVD diamond in terms of XRD and Raman spectroscopy at 300–1200 K. The measured nitrogen content was ~270 and ~0.89 ppm for the HPHT diamond and the CVD diamond, respectively. The moderate nitrogen impurities did not significantly affect the temperature dependence of Raman spectra for temperature-sensing applications. However, the nitrogen impurities greatly influence FTIR spectroscopy and optical transmittance. The CVD diamond showed higher transmittance, up to 71% with only a ~6% drop at temperatures as high as 873 K. This study shows that CVD bulk diamonds can be used for IR windows under harsh environments.


2008 ◽  
Vol 1080 ◽  
Author(s):  
Ataur Sarkar ◽  
M. Saif Islam ◽  
Sungsoo Yi ◽  
A. Alec Talin

ABSTRACTRaman spectroscopy was performed on magnesium (Mg) doped InP nanowires bridged between single crystal vertical silicon electrodes using a green laser (λ∼ 532 nm). First order TO-phonon and LO phonon-plasmon peaks observed at 305 cm−1 and 345 cm−1, respectively, are consistent with those for bulk single crystal InP. Misorientation of the nanowires is found to influence the TO and LO peak intensities. Bottom broadening up to ∼20 cm−1 of the TO peak due to the energy dispersion in the shifted Stokes spectrum is observed in long (∼6 μm) nanowires. Raman measurements indicated a trace of uncatalyzed InP on the insulating silicon oxide substrate and was verified through the electrical measurements of leakage currents before and after the nanowire growth. Initial investigation reveals that Raman spectroscopy can be a very useful in the study of nanowire heterostructures.


Author(s):  
Zheng-Zheng LI ◽  
Yong ZHANG ◽  
Zhi-Zhan CHEN ◽  
Er-Wei SHI

2012 ◽  
Vol 22 (19) ◽  
pp. 9678 ◽  
Author(s):  
Rajiv Ramanujam Prabhakar ◽  
Nripan Mathews ◽  
K B Jinesh ◽  
K R G Karthik ◽  
Stevin Snellius Pramana ◽  
...  
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document