Optical properties of semiconducting carbon nanotubes under axial magnetic field

2008 ◽  
Vol 372 (10) ◽  
pp. 1712-1716 ◽  
Author(s):  
Guili Yu ◽  
Wei Fa
Keyword(s):  
Magnetic Field ◽  
Carbon Nanotubes ◽  
Optical Properties ◽  
Axial Magnetic Field

scholarly journals Theoretical Analysis of the Faraday Effect in Carbon Nanotubes with Arbitrary Chirality

2013 ◽  
Vol 2013 ◽  
pp. 1-8
Author(s):  
Abbas Zarifi
Keyword(s):  
Magnetic Field ◽  
Carbon Nanotubes ◽  
Faraday Effect ◽  
Axial Magnetic Field ◽  
Tight Binding ◽  
Nearest Neighbour ◽  
Matrix Elements ◽  
Binding Model ◽  
Weak Magnetic Fields ◽  
Close Form

Using tight-binding model with nearest neighbour interactions, the optical properties of carbon nanotubes under the influence of an external magnetic field are analyzed. First, dipole matrix elements for two cases of light polarized parallel as well as perpendicular to the nanotube axis are analyzed. A close form analytic expression for dipole matrix is obtained for carbon nanotubes with arbitrary chirality in the case of light polarized parallel to the nanotube axis. Then the diagonal and off-diagonal elements of the frequency-dependent susceptibility in the presence of an axial magnetic field are investigated. The off-diagonal elements are applied to calculate the interband Faraday rotation and the Verdet constant. These effects should be clearly detectable under realistic conditions using weak magnetic fields.

scholarly journals The effects of axial magnetic field on electronic properties of carbon nanotubes

2006 ◽  
Vol 55 (12) ◽  
pp. 6526
Author(s):  
Zhang Zhu-Hua ◽  
Guo Wan-Lin ◽  
Guo Yu-Feng
Keyword(s):  
Magnetic Field ◽  
Carbon Nanotubes ◽  
Electronic Properties ◽  
Axial Magnetic Field

Orbital motion of metallic carbon nanotubes in an axial magnetic field

2003 ◽  
Vol 83 (26) ◽  
pp. 5515-5517 ◽  
Author(s):  
Jie Jiang ◽  
Jinming Dong ◽  
D. Y. Xing
Keyword(s):  
Magnetic Field ◽  
Carbon Nanotubes ◽  
Orbital Motion ◽  
Axial Magnetic Field

Electrostatic waves in carbon nanotubes with an axial magnetic field

2013 ◽  
Vol 20 (10) ◽  
pp. 102103 ◽  
Author(s):  
Alireza Abdikian ◽  
Mehran Bagheri
Keyword(s):  
Magnetic Field ◽  
Carbon Nanotubes ◽  
Axial Magnetic Field ◽  
Electrostatic Waves

Diffusion-Controlled Dopant Transport During Magnetically-Stabilized Liquid-Encapsulated Czochralski Growth of Compound Semiconductor Crystals

2001 ◽  
Vol 123 (4) ◽  
pp. 893-898 ◽  
Author(s):  
Joseph L. Morton ◽  
Nancy Ma ◽  
David F. Bliss ◽  
George G. Bryant
Keyword(s):  
Magnetic Field ◽  
Optical Properties ◽  
Dopant Concentration ◽  
Axial Magnetic Field ◽  
Compound Semiconductor ◽  
Czochralski Growth ◽  
Semiconductor Crystal ◽  
Semiconductor Crystals ◽  
Diffusion Controlled ◽  
Single Compound

During the magnetically-stabilized liquid-encapsulated Czochralski (MLEC) process, a single compound semiconductor crystal is grown by the solidification of an initially molten semiconductor (melt) contained in a crucible. The melt is doped with an element in order to vary the electrical and/or optical properties of the crystal. During growth, the so-called melt-depletion flow caused by the opposing relative velocities of the encapsulant-melt interface and the crystal-melt interface can be controlled with an externally applied magnetic field. The convective dopant transport during growth driven by this melt motion produces nonuniformities of the dopant concentration in both the melt and the crystal. This paper presents a model for the unsteady transport of a dopant during the MLEC process with an axial magnetic field. Dopant distributions in the crystal and in the melt at several different stages during growth are presented.

Segregation During Magnetically-Stabilized Liquid-Encapsulated Growth of Compound Semiconductor Crystals

2000 ◽  
Author(s):  
Nancy Ma ◽  
David F. Bliss ◽  
George G. Bryant
Keyword(s):  
Magnetic Field ◽  
Optical Properties ◽  
Applied Magnetic Field ◽  
Dopant Concentration ◽  
Axial Magnetic Field ◽  
Compound Semiconductor ◽  
Semiconductor Crystal ◽  
Semiconductor Crystals ◽  
Single Compound ◽  
Relative Motions

Abstract During the magnetically-stabilized liquid-encapsulated Czochralski (MLEC) process, a single compound semiconductor crystal is grown by the solidification of an initially molten semiconductor (melt) contained in a crucible. The melt is doped with an element in order to vary the electrical and/or optical properties of the crystal. During growth, the so-called melt-depletion flow caused by the opposing relative motions of the encapsulant-melt interface and the crystal-melt interface can be controlled with an externally applied magnetic field. The convective dopant transport during growth driven by this melt motion produces non-uniformities of the dopant concentration in both the melt and the crystal. This paper presents a model for the unsteady transport of a dopant during the MLEC process with an axial magnetic field. Dopant distributions in the crystal and in the melt at several different stages during growth are presented.

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