Analytical model for accurate extraction of metal-semiconductor ohmic contact parameters using a novel electrode-pair layout scheme

2019 ◽  
Vol 108 ◽  
pp. 197-201 ◽  
Author(s):  
Huolin Huang ◽  
Zhonghao Sun ◽  
Feng Zhang ◽  
Feiyu Li ◽  
Yaqing Cao ◽  
...  
Keyword(s):  
Analytical Model ◽  
Ohmic Contact ◽  
Electrode Pair ◽  
Contact Parameters

An Analytical Model of Joint Contact

1990 ◽  
Vol 112 (4) ◽  
pp. 407-413 ◽  
Author(s):  
A. W. Eberhardt ◽  
L. M. Keer ◽  
J. L. Lewis ◽  
V. Vithoontien
Keyword(s):  
Stress Distribution ◽  
Normal Stress ◽  
Analytical Model ◽  
Contact Radius ◽  
Shear Stresses ◽  
Maximum Normal Stress ◽  
Calcified Cartilage ◽  
Joint Contact ◽  
Maximum Contact ◽  
Contact Parameters

The stress distribution in the region of contact between a layered elastic sphere and a layered elastic cavity is determined using an analytical model to simulate contact of articulating joints. The purpose is to use the solution to analyze the effects of cartilage thickness and stiffness, bone stiffness and joint curvature on the resulting stress field, and investigate the possibility of cracking of the material due to tensile and shear stresses. Vertical cracking of cartilage as well as horizontal splitting at the cartilage-calcified cartilage interface has been observed in osteoarthritic joints. The current results indicate that for a given system (material properties μ and ν constant), the stress distribution is a function of the ratio of contact radius to layer thickness (a/h), and while tensile stresses are seen to occur only when a/h is small, tensile strain is observed for all a/h values. Significant shear stresses are observed at the cartilage-bone interface. Softening of cartilage results in an increase in a/h, and a decrease in maximum normal stress. Cartilage thinning increases a/h and the maximum contact stress, while thickening has the opposite effect. A reduction in the indenting radius reduces a/h and increases the maximum normal stress. Bone softening is seen to have negligible effect on the resulting contact parameters and stress distribution.

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

ANALYTICAL MODEL OF SUPEREXCHANGE

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-911-C8-912
Author(s):  
Yu. V. Rakitin ◽  
V. T. Kalinnikov
Keyword(s):  
Analytical Model

ANALYTICAL MODEL FOR ENVIRONMENTAL IMPACT OF SOLID WASTE DISPOSAL FROM ELECTRICITY GENERATION

2002 ◽  
Vol 4 (1-2) ◽  
pp. 26
Author(s):  
Paulo Fernando Lavalle Heilbron Filho ◽  
Jesus Salvador Perez Guerrero ◽  
Elizabeth May Pontedeiro ◽  
Nerbe J. Ruperti, Jr. ◽  
Renato M. Cotta
Keyword(s):  
Environmental Impact ◽  
Solid Waste ◽  
Analytical Model ◽  
Waste Disposal ◽  
Electricity Generation ◽  
Solid Waste Disposal
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