scholarly journals Gate control of lattice-pseudospin currents in graphene on SW2: Effect of sublattice symmetry breaking and spin–orbit interaction

2016 ◽  
Vol 80 ◽  
pp. 120-124 ◽  
Author(s):  
Kitakorn Jatiyanon ◽  
Bumned Soodchomshom
Keyword(s):  
Symmetry Breaking ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Gate Control

Gate Control of Spin-Orbit Interaction in an Inverted In0.53Ga0.47As/In0.52Al0.48As Heterostructure

1997 ◽  
Vol 78 (7) ◽  
pp. 1335-1338 ◽  
Author(s):  
Junsaku Nitta ◽  
Tatsushi Akazaki ◽  
Hideaki Takayanagi ◽  
Takatomo Enoki
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Gate Control

Gate control of spin–orbit interaction in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure

1998 ◽  
Vol 2 (1-4) ◽  
pp. 527-531 ◽  
Author(s):  
Junsaku Nitta ◽  
Tatsushi Akazaki ◽  
Hideaki Takayanagi ◽  
Takatomo Enoki
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Gate Control

scholarly journals Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems

2017 ◽  
Vol 95 (24) ◽  
Author(s):  
M. Luengo-Kovac ◽  
F. C. D. Moraes ◽  
G. J. Ferreira ◽  
A. S. L. Ribeiro ◽  
G. M. Gusev ◽  
...  
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit ◽  
Two Dimensional ◽  
Spin Orbit Interaction ◽  
Gate Control

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

scholarly journals Dirac nodal lines protected against spin-orbit interaction in IrO2

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
J. N. Nelson ◽  
J. P. Ruf ◽  
Y. Lee ◽  
C. Zeledon ◽  
J. K. Kawasaki ◽  
...  
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Nodal Lines

scholarly journals Low-symmetry nanowire cross-sections for enhanced Dresselhaus spin-orbit interaction

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Miguel J. Carballido ◽  
Christoph Kloeffel ◽  
Dominik M. Zumbühl ◽  
Daniel Loss
Keyword(s):  
Cross Sections ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Low Symmetry
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