scholarly journals Dielectric mismatch and shallow donor impurities in GaN/HfO2 quantum wells

2015 ◽  
Vol 66 ◽  
pp. 81-86 ◽  
Author(s):  
T.A.S. Pereira ◽  
A.A. Sousa ◽  
M.H. Degani ◽  
G.A. Farias
Keyword(s):  
Quantum Wells ◽  
Shallow Donor ◽  
Dielectric Mismatch

Electronic and shallow donor impurity states in GaAs‐Ga1−xAlxAs quantum‐well wires: Effects of dielectric mismatch

1994 ◽  
Vol 75 (11) ◽  
pp. 7389-7393 ◽  
Author(s):  
Zhen‐Yan Deng ◽  
Ting‐Rong Lai ◽  
Jing‐Kun Guo ◽  
Shi‐Wei Gu
Keyword(s):  
Quantum Well ◽  
Shallow Donor ◽  
Donor Impurity ◽  
Impurity States ◽  
Quantum Well Wires ◽  
Dielectric Mismatch

Binding energy of shallow donor impurity in asymmetric quantum wells

2010 ◽  
Vol 43 (1) ◽  
pp. 372-374 ◽  
Author(s):  
Chaojin Zhang ◽  
Zhanxin Wang ◽  
Ying Liu ◽  
Kangxian Guo
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Shallow Donor ◽  
Donor Impurity ◽  
Asymmetric Quantum

Intense field effects on shallow donor impurities in graded quantum wells

2003 ◽  
Vol 18 (6) ◽  
pp. 470-474 ◽  
Author(s):  
H Sari ◽  
E Kasapoglu ◽  
I Sokmen ◽  
N Balkan
Keyword(s):  
Quantum Wells ◽  
Shallow Donor ◽  
Field Effects ◽  
Intense Field

scholarly journals Landau levels and shallow donor states in GaAs/AlGaAs multiple quantum wells at megagauss magnetic fields

2017 ◽  
Vol 95 (11) ◽  
Author(s):  
M. Zybert ◽  
M. Marchewka ◽  
E. M. Sheregii ◽  
D. G. Rickel ◽  
J. B. Betts ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Shallow Donor ◽  
Landau Levels ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Donor States ◽  
Megagauss Magnetic Fields

Effects of dielectric mismatch on the impurity binding energies in GaAs-Ga1−xAlxAs quantum wells

1994 ◽  
Vol 50 (8) ◽  
pp. 5732-5735 ◽  
Author(s):  
Zhen-Yan Deng ◽  
Ting-Rong Lai ◽  
Jing-Kun Guo
Keyword(s):  
Quantum Wells ◽  
Binding Energies ◽  
Dielectric Mismatch

scholarly journals Impact of QW coupling on the binding energy in InGaN/GaN under the effects of the size, the impurity and the internal composition

2020 ◽  
Vol 330 ◽  
pp. 01012
Author(s):  
Walid Belaid ◽  
Haddou El Ghazi ◽  
Izeddine Zorkani ◽  
Anouar Jorio
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Effective Mass ◽  
Variational Approach ◽  
Shallow Donor ◽  
Donor Impurity ◽  
Coupled Quantum Wells ◽  
Surrounding Matrix ◽  
Main Effect ◽  
Good Agreement

In the present paper, the binding energy of hydrogenic shallow-donor impurity in simple and double coupled quantum wells based on unstrained wurtzite (In,Ga)N/GaN is investigated. Considering the effective-mass and dielectric mismatches between the well and its surrounding matrix, the numerical calculations are performed within the framework of the parabolic band and the single band effective-mass approximations under the finite potential barrier using finite element method (FEM). According to our results, it appears that the main effect of the wells coupling is to enhance the binding energy. It is also obtained that the binding energy is strongly sensitive to the internal and external parameters and can be adjusted by the quantum well/barrier width, the impurity position and the internal Indium composition. Our results are in good agreement with the finding especially for those obtained by the variational approach.

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