Transport properties of topological insulator Bi2Se3 thin films in tilted magnetic fields

2012 ◽  
Vol 46 ◽  
pp. 236-240 ◽  
Author(s):  
Xiuxia Wang ◽  
Xiaoyue He ◽  
Tong Guan ◽  
Jian Liao ◽  
Chaojing Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Fields ◽  
Transport Properties ◽  
Topological Insulator

Time‐Dependent Electrical Transport Properties of Topological Insulator Cr‐Doped Bi 2 Se 3 Thin Films

2019 ◽  
Vol 256 (5) ◽  
pp. 1800735 ◽  
Author(s):  
Qiu Lin Li ◽  
Xing Hua Zhang ◽  
Wen Jie Wang ◽  
Zhi Qing Li ◽  
Ding Bang Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Topological Insulator ◽  
Electrical Transport ◽  
Time Dependent ◽  
Electrical Transport Properties

Thickness dependent quantum oscillations of transport properties in topological insulator Bi2Te3 thin films

2015 ◽  
Vol 106 (5) ◽  
pp. 053103 ◽  
Author(s):  
E. I. Rogacheva ◽  
A. V. Budnik ◽  
A. Yu. Sipatov ◽  
O. N. Nashchekina ◽  
M. S. Dresselhaus
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Topological Insulator ◽  
Quantum Oscillations

Quantum Size Effects in Transport Properties of Bi2Te3 Topological Insulator Thin Films

2017 ◽  
Vol 46 (7) ◽  
pp. 3949-3957 ◽  
Author(s):  
E. I. Rogacheva ◽  
A. V. Budnik ◽  
O. N. Nashchekina ◽  
A. V. Meriuts ◽  
M. S. Dresselhaus
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Topological Insulator ◽  
Size Effects ◽  
Quantum Size Effects ◽  
Quantum Size

Thickness oscillations of the transport properties in n-type Bi2Te3 topological insulator thin films

2015 ◽  
Vol 594 ◽  
pp. 109-114 ◽  
Author(s):  
E.I. Rogacheva ◽  
A.V. Budnik ◽  
A.Yu. Sipatov ◽  
O.N. Nashchekina ◽  
A.G. Fedorov ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Topological Insulator

MAGNETORESISTANCE IN TOPOLOGICAL INSULATOR MnxBi2-xSe3 CRYSTALS

2013 ◽  
Vol 27 (15) ◽  
pp. 1362036 ◽  
Author(s):  
LI LV ◽  
MIN ZHANG ◽  
ZHANTAO WEI ◽  
LINQIN YANG ◽  
XISHENG YANG ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Single Crystals ◽  
Topological Insulator ◽  
Magnetic Impurities ◽  
High Concentration ◽  
Similar Temperature Dependence ◽  
Similar Temperature ◽  
Mr Effect

The transport properties of magnetic-atoms doped Mn x Bi 2-x Se 3 single crystals are studied. The samples exhibit approximately similar temperature dependence of resistivity behavior under various applied magnetic fields from zero to 9 T. Magnetoresistance (MR) is modified significantly by high concentration of Mn dopants. The scatterings mechanism between the magnetic impurities and electrons plays an important role in both transport properties and MR effect.

scholarly journals Tuning Insulator-Semimetal Transitions in 3D Topological Insulator thin Films by Intersurface Hybridization and In-Plane Magnetic Fields

2019 ◽  
Vol 123 (20) ◽  
Author(s):  
Yang Xu ◽  
Guodong Jiang ◽  
Ireneusz Miotkowski ◽  
Rudro R. Biswas ◽  
Yong P. Chen
Keyword(s):  
Thin Films ◽  
Magnetic Fields ◽  
Topological Insulator

Electric and magnetic fields effects on the transport properties of La0.5Ca0.5MnO3 thin films

2004 ◽  
Vol 272-276 ◽  
pp. 402-404 ◽  
Author(s):  
M Villafuerte ◽  
S Duhalde ◽  
D Rubi ◽  
G Bridoux ◽  
S Heluani ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Fields ◽  
Transport Properties ◽  
Electric And Magnetic Fields

Transport Properties of CaSi2 and Ca2Si Thin Films

2020 ◽  
Vol 312 ◽  
pp. 3-8
Author(s):  
L. Dermenji ◽  
K.G. Lisunov ◽  
Konstantin Nickolaevich Galkin ◽  
Dmitrii L. Goroshko ◽  
E.A. Chusovitin ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Fields ◽  
Transport Properties ◽  
Hall Coefficient ◽  
Charge Carriers ◽  
The Other ◽  
Temperature Range ◽  
Other Hand ◽  
Complex Dependence

Resistivity, r (T), and Hall coefficient in weak (B < 1 T) magnetic fields, R (T), are investigated in Ca2Si and CaSi2 films at temperatures T between ~ 20 - 300 K. In CaSi2, r (T) is typical of metals increasing with T within the whole temperature range. On the other hand, the resistivity of Ca2Si is pertinent of semiconductors. Namely, it is activated below T ~ 200 K, exhibiting different slopes of ln r vs. T -1 plots at lower and higher T, and a weak increase between T ~ 200 - 300 K. Both materials demonstrate a complex dependence of R (T), including a change of the sign. Transport properties above have been analyzed assuming two groups of charge carriers, electrons and holes, contributing them.

Sign in / Sign up

Export Citation Format

Share Document