Screened exciton properties of narrow-gap lead salt finite confining potential semiconductor quantum well

2012 ◽  
Vol 44 (9) ◽  
pp. 1924-1930 ◽  
Author(s):  
K.H. Aharonyan ◽  
E.M. Kazaryan
Keyword(s):  
Quantum Well ◽  
Lead Salt ◽  
Narrow Gap ◽  
Confining Potential ◽  
Semiconductor Quantum Well

scholarly journals THE EFFECT OF SCREENED COULOMB INTERACTION ON THE OPTICAL PROPERTIES OF EuS/PbS/EuS FINITE CONFINING POTENTIAL QUANTUM WELL

2012 ◽  
Vol 15 ◽  
pp. 224-231 ◽  
Author(s):  
K. H. AHARONYAN ◽  
E. M. KAZARYAN
Keyword(s):  
Optical Properties ◽  
Binding Energy ◽  
Quantum Well ◽  
Coulomb Potential ◽  
Band Edge ◽  
Lead Salt ◽  
Confining Potential ◽  
Mass Approximation ◽  
Excitonic Effects ◽  
Pair Energy

We theoretically investigate excitonic effects on the optical properties of quasi-two dimensional realistic EuS/PbS/EuS finite confining potential quantum well. The strong contrast of material parameter’s across the well interfaces and the characteristic band-nonparabolicity effect of lead salt semiconductor are taken into account. In presence of medium polarization a feasibility of the screened Coulomb potential in quantum well is examined and appropriate screening radius is revealed for the first time. The screened binding energy investigated while a variational approach has been used. Depend on the realistic nanostructure specifics a monotonic decrease of the enhanced binding energy is received when in-plane carrier density/temperature ratio parameter increases. Exciton absorption spectra near the band edge within the effective-mass approximation is examined. Coulomb potential having a cutoff type is used, that efficiently represented the potential in the realistic quantum well. Screened exciton factor, which is the absorption intensity enhancement of the unbound (continuum) exciton states that are located above the band edge, is used. Plot of the dependence of the exciton factor on the exciton pair energy is given.

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well
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