Structural and light emission properties of silicon-based nanostructures with high excess silicon content

2009 ◽  
Vol 41 (6) ◽  
pp. 1015-1018 ◽  
Author(s):  
L. Khomenkova ◽  
N. Korsunska ◽  
M. Baran ◽  
B. Bulakh ◽  
T. Stara ◽  
...  
2009 ◽  
Vol 2 (2) ◽  
pp. 147-159
Author(s):  
L. Khomenkova ◽  
N. Korsunska ◽  
M. Baran ◽  
T. Stara ◽  
V. Yukhymchuk ◽  
...  

2005 ◽  
Vol 108-109 ◽  
pp. 755-760 ◽  
Author(s):  
Wolfgang Skorupa ◽  
J.M. Sun ◽  
S. Prucnal ◽  
L. Rebohle ◽  
T. Gebel ◽  
...  

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.


1999 ◽  
Vol 48 (2) ◽  
pp. 326
Author(s):  
WANG MAO-XIANG ◽  
SUN CHENG-XIU ◽  
SHI XIAO-CHUN ◽  
YU JIAN-HUA

1995 ◽  
Vol 405 ◽  
Author(s):  
D. Dimova-Malinovska ◽  
M. Tzolov ◽  
M. Kamenova ◽  
N. Tzenov ◽  
M. Sendova-Vassileva ◽  
...  

AbstractThe results of photoelectric properties and electroluminescent studies of structures ZnO/porous Si/p-type c-Si/Al and ZnO/porous Si/p-n c-Si junction/Al are presented. Porous Si is prepared by stain etching of c-Si covered with thin Al film. The transparent ZnO film allows light emission through the top surface of the device under forward electrical bias. Photocurrent is observed under reverse bias and a photovoltaic effect is measured on the p-n junction PS device. The model based on injection of minority carriers through a narrow energy barrier into the porous Si and the presence of the barrier at the interface porous Si/c-Si is suggested for describing the electrical, photoelectric and luminescent properties of the structures.


2019 ◽  
Vol 102 ◽  
pp. 90-94 ◽  
Author(s):  
Ling-Yun Rong ◽  
Chao Hu ◽  
Zhong-Ning Xu ◽  
Guan-E Wang ◽  
Guo-Cong Guo

2019 ◽  
Vol 11 (1) ◽  
pp. 183-195
Author(s):  
Zhuo Li ◽  
Kun Zhang ◽  
Yan Song ◽  
Zhenxue Jiang ◽  
Xiaoxue Liu ◽  
...  

Abstract It is a common method to use sequence stratigraphic theory to identify favourable intervals in hydrocarbon exploration. The Lower Cambrian shale of Well Jiangye-1 in Yangtze Region in Xiuwu Basin was chosen as the research object. The content of excess silicon of siliceous minerals in shale was calculated quantitatively, and the concentration distribution of Al, Fe, Mn showed that the excess silicon is of hydrothermally origin and the shale deposited in an environment with hydrothermal activity. Using U/Th values in the study, combined with lithology and logging data, in order to divide sequences of the Lower Cambrian shale in Yangtze Region in Xiuwu Basin. The result shows that the shale of the Lower Cambrian shale is recognized as 1 2nd sequence (TST-RST, TST = Transgressive systems tract; RST = Regressive systems tract) and then further subdivided into 5 3rd sequences (SQ1-SQ5). During the deposition of SQ2 and SQ3, hydrothermal activity was active, and their excess silicon content was generally above 20%-30%. Rising sea level and active hydrothermal activity were beneficial for the enrichment of siliceous minerals and organic matter. Based on the comparison of the reservoir parameters, it tells that SQ2 and SQ3 have relatively higher content of TOC, higher content of brittle minerals (such as siliceous minerals, carbonate minerals and so on), larger effective porosity and higher content of gas, which make it as the most favourable intervals of the Lower Cambrian in Xiuwu Basin.


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