Determination of the Landau level shape via the transition to the spin polarized state in the integer quantum Hall effect

2008 ◽  
Vol 40 (5) ◽  
pp. 1200-1201
Author(s):  
B.A. Piot ◽  
D.K. Maude ◽  
M. Henini ◽  
Z.R. Wasilewski ◽  
J.A. Gupta ◽  
...  
Keyword(s):  
Hall Effect ◽  
Landau Level ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Integer Quantum Hall Effect ◽  
Spin Polarized ◽  
Integer Quantum

Quantum Hall Effect in Graphene

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1140-1144
Author(s):  
Mikito Koshino ◽  
Tsuneya Ando
Keyword(s):  
Hall Effect ◽  
Landau Level ◽  
Thermodynamic Limit ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Monolayer Graphene ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum ◽  
Extended States ◽  
Landau Band

The integer quantum Hall effect is studied for a non-interacting electron in a monolayer graphene. We numerically calculate the Hall conductivity in a single Landau level with disorder, and estimate the critical energies for the extended states in thermodynamic limit. We show that a valley-degenerated (K and K′) Landau band has extended levels at two different energies, indicating that an extra Hall plateau appears inside.

scholarly journals An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity

2021 ◽  
Vol 7 (8) ◽  
pp. eabf1388
Author(s):  
Phillip Dang ◽  
Guru Khalsa ◽  
Celesta S. Chang ◽  
D. Scott Katzer ◽  
Neeraj Nepal ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electron Gas ◽  
Quantum Hall ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
2D Electron Gas ◽  
Integer Quantum Hall Effect ◽  
Topological Quantum ◽  
Integer Quantum

Creating seamless heterostructures that exhibit the quantum Hall effect and superconductivity is highly desirable for future electronics based on topological quantum computing. However, the two topologically robust electronic phases are typically incompatible owing to conflicting magnetic field requirements. Combined advances in the epitaxial growth of a nitride superconductor with a high critical temperature and a subsequent nitride semiconductor heterostructure of metal polarity enable the observation of clean integer quantum Hall effect in the polarization-induced two-dimensional (2D) electron gas of the high-electron mobility transistor. Through individual magnetotransport measurements of the spatially separated GaN 2D electron gas and superconducting NbN layers, we find a small window of magnetic fields and temperatures in which the epitaxial layers retain their respective quantum Hall and superconducting properties. Its analysis indicates that in epitaxial nitride superconductor/semiconductor heterostructures, this window can be significantly expanded, creating an industrially viable platform for robust quantum devices that exploit topologically protected transport.

Publisher’s Note: Charge Fractionalization in the Integer Quantum Hall Effect [Phys. Rev. Lett. 112, 166801 (2014)]

2014 ◽  
Vol 112 (18) ◽  
Author(s):  
Hiroyuki Inoue ◽  
Anna Grivnin ◽  
Nissim Ofek ◽  
Izhar Neder ◽  
Moty Heiblum ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum ◽  
Charge Fractionalization
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