Nanosecond scale carrier dynamics of self-assembled InAs/AlAs quantum dots studied by time-resolved photoluminescence

2005 ◽  
Vol 28 (3) ◽  
pp. 203-208 ◽  
Author(s):  
Z. Ma ◽  
K. Pierz ◽  
J. Hübner ◽  
W.W. Rühle
1999 ◽  
Vol 38 (Part 1, No. 2A) ◽  
pp. 674-680 ◽  
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I. Gontijo ◽  
G. S. Buller ◽  
J. S. Massa ◽  
A. C. Walker ◽  
S. V. Zaitsev ◽  
...  

1996 ◽  
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S. Raymond ◽  
S. Fafard ◽  
P. J. Poole ◽  
A. Wojs ◽  
P. Hawrylak ◽  
...  

2006 ◽  
Vol 498 (1-2) ◽  
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Ling Min Kong ◽  
Jia Fa Cai ◽  
Zheng Yun Wu ◽  
Zheng Gong ◽  
Zhi Chuan Niu ◽  
...  

2000 ◽  
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V. K. Kalevich ◽  
...  

2001 ◽  
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...  

2002 ◽  
Vol 722 ◽  
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Saulius Marcinkevičius ◽  
Rosa Leon ◽  
Charlene Lobo ◽  
Brian Magness ◽  
William Taylor

AbstractThe effects of proton irradiation on carrier dynamics were measured by time-resolved photoluminescence on InGaAs/GaAs quantum dot structures with different dot density and substrate orientation, as well as on InAlAs/AlGaAs quantum dots. Results were compared to irradiation effects on carrier dynamics in thin InGaAs quantum wells. We find that carrier lifetimes in QDs are much less affected by proton irradiation than in quantum wells, which can be attributed to the three-dimensional carrier confinement in quantum dots.


2006 ◽  
Vol 3 (12) ◽  
pp. 4299-4302
Author(s):  
H. Nishida ◽  
S. Kayamori ◽  
H. Sasakura ◽  
S. Adachi ◽  
S. Muto ◽  
...  

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