Effect of the electron population on intraband absorption in InAs/GaAs self-assembled quantum dots

2005 ◽  
Vol 26 (1-4) ◽  
pp. 105-109 ◽  
Author(s):  
E.A. Zibik ◽  
A.D. Andreev ◽  
L.R. Wilson ◽  
M.J. Steer ◽  
R.P. Green ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Population ◽  
Intraband Absorption ◽  
Self Assembled

Intraband absorption and photocurrent spectroscopy of self-assembled p-type Si/SiGe quantum dots

2002 ◽  
Vol 80 (12) ◽  
pp. 2093-2095 ◽  
Author(s):  
T. Fromherz ◽  
W. Mac ◽  
A. Hesse ◽  
G. Bauer ◽  
C. Miesner ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Photocurrent Spectroscopy ◽  
Intraband Absorption ◽  
Self Assembled ◽  
P Type

Intraband absorption in Ge/Si self-assembled quantum dots

1999 ◽  
Vol 74 (3) ◽  
pp. 401-403 ◽  
Author(s):  
P. Boucaud ◽  
V. Le Thanh ◽  
S. Sauvage ◽  
D. Débarre ◽  
D. Bouchier
Keyword(s):  
Quantum Dots ◽  
Intraband Absorption ◽  
Self Assembled

Intraband Absorption Spectroscopy of Self-Assembled Quantum Dots

1998 ◽  
pp. 141-146
Author(s):  
P. Boucaud ◽  
S. Sauvage ◽  
F. H. Julien ◽  
J.-M. Gérard ◽  
V. Thierry-Mieg
Keyword(s):  
Quantum Dots ◽  
Absorption Spectroscopy ◽  
Intraband Absorption ◽  
Self Assembled

In-plane polarized intraband absorption in InAs/GaAs self-assembled quantum dots

1998 ◽  
Vol 58 (16) ◽  
pp. 10562-10567 ◽  
Author(s):  
S. Sauvage ◽  
P. Boucaud ◽  
J.-M. Gérard ◽  
V. Thierry-Mieg
Keyword(s):  
Quantum Dots ◽  
Intraband Absorption ◽  
Self Assembled

Resonant excitation of intraband absorption in InAs/GaAs self-assembled quantum dots

1998 ◽  
Vol 84 (8) ◽  
pp. 4356-4362 ◽  
Author(s):  
S. Sauvage ◽  
P. Boucaud ◽  
J.-M. Gérard ◽  
V. Thierry-Mieg
Keyword(s):  
Quantum Dots ◽  
Resonant Excitation ◽  
Intraband Absorption ◽  
Self Assembled

 Tuning of intraband absorption and photoresponse in self-assembled InAs∕GaAs quantum dots by thermal annealing

2008 ◽  
Vol 103 (6) ◽  
pp. 066101 ◽  
Author(s):  
W. H. Ng ◽  
E. A. Zibik ◽  
L. R. Wilson ◽  
M. S. Skolnick ◽  
J. W. Cockburn ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Thermal Annealing ◽  
Intraband Absorption ◽  
Self Assembled

Saturation of intraband absorption and electron relaxation time in n-doped InAs/GaAs self-assembled quantum dots

1998 ◽  
Vol 73 (26) ◽  
pp. 3818-3821 ◽  
Author(s):  
S. Sauvage ◽  
P. Boucaud ◽  
F. Glotin ◽  
R. Prazeres ◽  
J.-M. Ortega ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Relaxation Time ◽  
Electron Relaxation ◽  
Intraband Absorption ◽  
Electron Relaxation Time ◽  
Self Assembled

Intraband Absorption in Ge/Si Self-Assembled Quantum Dots

1999 ◽  
Vol 571 ◽  
Author(s):  
P. Boucaud ◽  
V. Le Thanh ◽  
S. Sauvage ◽  
T. Brunhes ◽  
F. Fortuna ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Cross Section ◽  
Absorption Cross Section ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Absorption Cross ◽  
Mid Infrared ◽  
Intraband Absorption ◽  
Self Assembled

ABSTRACTMid-infrared intraband absorption in Ge/Si self-assembled quantum dots is reported. The self-assembled quantum dots are grown by ultra-high-vacuum chemical vapor deposition. The intraband absorption is observed using a photoinduced absorption technique. The mid-infrared absorption, which is in-plane polarized, is maximum around 300 meV. The absorption is attributed to a quantum dot hole transition between bound and continuum states. The absorption cross section is deduced from the saturation of the photoinduced intraband absorption. An inplane absorption cross section as large as 2 × 10−13 cm2 is measured for one dot plane.

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