Lateral electron transport through single InAs quantum dots grown by molecular beam epitaxy

2004 ◽  
Vol 21 (2-4) ◽  
pp. 423-425
Author(s):  
M Jung ◽  
K Hirakawa
Nanoscale ◽  
2015 ◽  
Vol 7 (36) ◽  
pp. 14822-14828 ◽  
Author(s):  
Dingxun Fan ◽  
Sen Li ◽  
N. Kang ◽  
Philippe Caroff ◽  
L. B. Wang ◽  
...  

Single electron transport is demonstrated in high-quality MBE-grown InSb nanowire single quantum dots with a dot length up to ∼700 nm.


2001 ◽  
Vol 40 (Part 1, No. 3B) ◽  
pp. 1885-1887 ◽  
Author(s):  
Toshiyuki Kaizu ◽  
Koichi Yamaguchi

2016 ◽  
Vol 451 ◽  
pp. 79-82
Author(s):  
Nicholas Weir ◽  
Ruizhe Yao ◽  
Chi-Sen Lee ◽  
Wei Guo

2003 ◽  
Vol 251 (1-4) ◽  
pp. 145-149 ◽  
Author(s):  
Fariba Ferdos ◽  
Shumin Wang ◽  
Yongqiang Wei ◽  
Mahdad Sadeghi ◽  
Qingxiang Zhao ◽  
...  

2005 ◽  
Vol 276 (1-2) ◽  
pp. 72-76 ◽  
Author(s):  
Z.L. Miao ◽  
S.J. Chua ◽  
Y.H. Chye ◽  
P. Chen ◽  
S. Tripathy

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