[(AlN)1/(GaN)n1]m/(AlN)n2-based quantum wells for quantum-cascade-laser application

2004 ◽  
Vol 21 (2-4) ◽  
pp. 765-769 ◽  
Author(s):  
A Ishida ◽  
Y Inoue ◽  
H Nagasawa ◽  
N Sone ◽  
K Ishino ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Cascade Laser ◽  
Laser Application ◽  
Quantum Cascade

Design and Preparation of AlN/GaN Quantum Wells for Quantum Cascade Laser Applications

2005 ◽  
Vol 44 (8) ◽  
pp. 5918-5922 ◽  
Author(s):  
Akihiro Ishida ◽  
Kazuma Matsue ◽  
Yoku Inoue ◽  
Hiroshi Fujiyasu ◽  
Hang-Ju Ko ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Cascade Laser ◽  
Laser Applications ◽  
Quantum Cascade

Improved InAs/AlSb/GaSb heterostructures for quantum cascade laser application

2001 ◽  
Author(s):  
Xavier Marcadet ◽  
Isabelle Prevot ◽  
Cyril Becker ◽  
Olivier Durand ◽  
Renato Bisaro ◽  
...  
Keyword(s):  
Quantum Cascade Laser ◽  
Laser Application ◽  
Quantum Cascade

InGaAs/GaAsSb Heterostructures: Aluminum-Free Intersubband Devices

2009 ◽  
Vol 1195 ◽  
Author(s):  
Michele Nobile ◽  
Gottfried Strasser ◽  
Hermann Detz ◽  
Elvis Mujagic ◽  
Aaron Andrews ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Cascade Laser ◽  
Multiple Quantum Well ◽  
Wavelength Region ◽  
Threshold Current ◽  
Multiple Quantum ◽  
Material System ◽  
Quantum Cascade ◽  
Intersubband Absorption

AbstractAn experimental study on mid-infrared intersubband absorption in InGaAs/GaAsSb multiple quantum wells grown lattice-matched to InP substrates by molecular beam epitaxy is presented. Intersubband absorption in a broad wavelength region (5.8 - 11.6 μm) is observed in multiple quantum well samples with well widths ranging between 4.5 and 12 nm. A conduction band offset at the InGaAs/GaAsSb heterointerface of 360 meV gives an excellent agreement between the theoretically calculated ISB transition energies and the Fourier-transform infrared spectroscopy measurements over the whole range of well widths under investigation. Two kinds of intersubband devices based on the InGaAs/GaAsSb material system are presented: a quantum well infrared photodetector operating at a wavelength of 5.6μm and an aluminum-free quantum cascade laser. The presented quantum cascade laser emits at a wavelength of 11.3 μm, with a threshold current density of 1.7 kA/cm2 at 78 K.

scholarly journals n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser

2019 ◽  
Vol 93 (1) ◽  
pp. 63-66
Author(s):  
Chiara Ciano ◽  
Luciana Di Gaspare ◽  
Michele Montanari ◽  
Luca Persichetti ◽  
Leonetta Baldassarre ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Cascade Laser ◽  
Quantum Cascade

Synchrotron Microspectroscopy of Quantum Cascade Laser Devices based on Quantum Wells and Quantum Dashes

2012 ◽  
Author(s):  
Peter Friedli ◽  
Valeria Liverini ◽  
Andreas Hugi ◽  
Philippe Lerch ◽  
Jerome Faist ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Cascade Laser ◽  
Quantum Cascade ◽  
Quantum Dashes ◽  
Laser Devices

scholarly journals Interfacial Mixing Analysis for Strained Layer Superlattices by Atom Probe Tomography

Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 437 ◽  
Author(s):  
Ayushi Rajeev ◽  
Weixin Chen ◽  
Jeremy Kirch ◽  
Susan Babcock ◽  
Thomas Kuech ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Cascade Laser ◽  
Atom Probe Tomography ◽  
Atom Probe ◽  
Strained Layer ◽  
Quantum Cascade ◽  
Spatially Resolved ◽  
Strained Layer Superlattice ◽  
Superlattice Structures ◽  
Laser Devices

Quantum wells and barriers with precise thicknesses and abrupt composition changes at their interfaces are critical for obtaining the desired emission wavelength from quantum cascade laser devices. High-resolution X-ray diffraction and transmission electron microscopy are commonly used to calibrate and characterize the layers’ thicknesses and compositions. A complementary technique, atom probe tomography, was employed here to obtain a direct measurement of the 3-dimensional spatially-resolved compositional profile in two InxGa1−xAs/InyAl1−yAs III-V strained-layer superlattice structures, both grown at 605 °C. Fitting the measured composition profiles to solutions to Fick’s Second Law yielded an average interdiffusion coefficient of 3.5 × 10−23 m2 s−1 at 605 °C. The extent of interdiffusion into each layer determined for these specific superlattices was 0.55 nm on average. The results suggest that quaternary active layers will form, rather than the intended ternary compounds, in structures with thicknesses and growth protocols that are typically designed for quantum cascade laser devices.

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