scholarly journals Radiation-induced magnetoresistance oscillations in a 2D electron gas

2003 ◽  
Vol 20 (1-2) ◽  
pp. 117-122 ◽  
Author(s):  
Adam C. Durst ◽  
Subir Sachdev ◽  
N. Read ◽  
S.M. Girvin
Keyword(s):  
Electron Gas ◽  
2D Electron Gas ◽  
Radiation Induced ◽  
Magnetoresistance Oscillations

scholarly journals Radiation-induced magnetoresistance oscillations in a 2D electron gas

2004 ◽  
Vol 25 (2-3) ◽  
pp. 198-204 ◽  
Author(s):  
Adam C. Durst ◽  
Subir Sachdev ◽  
N. Read ◽  
S.M. Girvin
Keyword(s):  
Electron Gas ◽  
2D Electron Gas ◽  
Radiation Induced ◽  
Magnetoresistance Oscillations

Microwave radiation induced collective response in Si/SiGe heterostructures with a 2D electron gas

2007 ◽  
Vol 142 (11) ◽  
pp. 631-633 ◽  
Author(s):  
S. Sassine ◽  
Yu. Krupko ◽  
E.B. Olshanetsky ◽  
Z.D. Kvon ◽  
J.C. Portal ◽  
...  
Keyword(s):  
Microwave Radiation ◽  
Electron Gas ◽  
2D Electron Gas ◽  
Collective Response ◽  
Radiation Induced

scholarly journals An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity

2021 ◽  
Vol 7 (8) ◽  
pp. eabf1388
Author(s):  
Phillip Dang ◽  
Guru Khalsa ◽  
Celesta S. Chang ◽  
D. Scott Katzer ◽  
Neeraj Nepal ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electron Gas ◽  
Quantum Hall ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
2D Electron Gas ◽  
Integer Quantum Hall Effect ◽  
Topological Quantum ◽  
Integer Quantum

Creating seamless heterostructures that exhibit the quantum Hall effect and superconductivity is highly desirable for future electronics based on topological quantum computing. However, the two topologically robust electronic phases are typically incompatible owing to conflicting magnetic field requirements. Combined advances in the epitaxial growth of a nitride superconductor with a high critical temperature and a subsequent nitride semiconductor heterostructure of metal polarity enable the observation of clean integer quantum Hall effect in the polarization-induced two-dimensional (2D) electron gas of the high-electron mobility transistor. Through individual magnetotransport measurements of the spatially separated GaN 2D electron gas and superconducting NbN layers, we find a small window of magnetic fields and temperatures in which the epitaxial layers retain their respective quantum Hall and superconducting properties. Its analysis indicates that in epitaxial nitride superconductor/semiconductor heterostructures, this window can be significantly expanded, creating an industrially viable platform for robust quantum devices that exploit topologically protected transport.

WSe2/2D electron gas heterojunction on KTaO3 for room-temperature giant photoconductivity

2020 ◽  
Author(s):  
Ze Zhou ◽  
Gensheng Huang ◽  
Jiaxin Shen ◽  
Shuainan Gong ◽  
Pengfei Zhou ◽  
...  
Keyword(s):  
Room Temperature ◽  
Electron Gas ◽  
2D Electron Gas

scholarly journals TRANSPORT PROPERTIES OF 2D ELECTRON GAS IN AN n-InGaAs/GaAs DQW IN A VICINITY OF LOW MAGNETIC-FIELD-INDUCED HALL INSULATOR–QUANTUM HALL LIQUID TRANSITION

2007 ◽  
Vol 06 (03n04) ◽  
pp. 173-177
Author(s):  
YU. G. ARAPOV ◽  
S. V. GUDINA ◽  
G. I. HARUS ◽  
V. N. NEVEROV ◽  
N. G. SHELUSHININA ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electron Gas ◽  
Quantum Hall ◽  
Zero Magnetic Field ◽  
Double Quantum ◽  
Ballistic Regime ◽  
2D Electron Gas ◽  
Double Quantum Well ◽  
Liquid Transition ◽  
Low Magnetic Field

The resistivity (ρ) of low mobility dilute 2D electron gas in an n- InGaAs / GaAs double quantum well (DQW) exhibits the monotonic "insulating-like" temperature dependence (dρ/dT < 0) at T = 1.8–70 K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kBTτ/ħ > 0.1–3.5) for our samples, and the electron density is on an "insulating" side of the so-called B = 0 2D metal–insulator transition. We show that the observed features of localization and Landau quantization in a vicinity of the low magnetic-field-induced insulator–quantum Hall liquid transition is due to the σxy(T) anomalous T-dependence.

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