scholarly journals Narrow band gap group III-nitride alloys

2004 ◽  
Vol 20 (3-4) ◽  
pp. 300-307 ◽  
Author(s):  
Wladek Walukiewicz
Keyword(s):  
Band Gap ◽  
Narrow Band ◽  
Group Iii ◽  
Nitride Alloys ◽  
Group Iii Nitride

Group III-nitride alloys as photovoltaic materials

2004 ◽  
Author(s):  
Joel W. Ager III ◽  
Junqiao Wu ◽  
Kin M. Yu ◽  
R. E. Jones ◽  
S. X. Li ◽  
...  
Keyword(s):  
Group Iii ◽  
Photovoltaic Materials ◽  
Nitride Alloys ◽  
Group Iii Nitride

Pressure Dependence of Optical Transitions in In-rich Group III-Nitride Alloys

2003 ◽  
Vol 798 ◽  
Author(s):  
S. X. Li ◽  
J. Wu ◽  
W. Walukiewicz ◽  
W. Shan ◽  
E. E. Haller ◽  
...  
Keyword(s):  
Pressure Dependence ◽  
Pressure Coefficient ◽  
Accurate Method ◽  
Group Iii Nitrides ◽  
Localized States ◽  
Optical Transitions ◽  
Group Iii ◽  
Pressure Coefficients ◽  
Nitride Alloys ◽  
Group Iii Nitride

ABSTRACTThe hydrostatic pressure dependence of the optical transitions in InN, In-rich In1-xGaxN (0 < x < 0.5) and In1-xAlxN (x = 0.25) alloys is studied using diamond anvil cells. The absorption edges and the photoluminescence peaks shift to higher energy with pressure. The pressure coefficient of InN is determined to be 3.0±0.1 meV/kbar. Together with previous experimental results, our data suggest that the pressure coefficients of group-III nitride alloys have only a weak dependence on the alloy composition. Photoluminescence gives much smaller pressure coefficients, which is attributed to emission involving highly localized states. This indicates that photoluminescence might not be an accurate method to study the pressure dependence of the fundamental bandgaps of group III-nitrides.

scholarly journals Phase separation and ordering in group-III nitride alloys

2004 ◽  
Vol 34 (2b) ◽  
pp. 593-597 ◽  
Author(s):  
L. K. Teles ◽  
M. Marques ◽  
L. M. R. Scolfaro ◽  
J. R. Leite ◽  
L. G. Ferreira
Keyword(s):  
Phase Separation ◽  
Group Iii ◽  
Nitride Alloys ◽  
Group Iii Nitride

Band gaps of InN and group III nitride alloys

2003 ◽  
Vol 34 (1-2) ◽  
pp. 63-75 ◽  
Author(s):  
J. Wu ◽  
W. Walukiewicz
Keyword(s):  
Band Gaps ◽  
Group Iii ◽  
Nitride Alloys ◽  
Group Iii Nitride

scholarly journals Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys

2003 ◽  
Vol 83 (24) ◽  
pp. 4963-4965 ◽  
Author(s):  
S. X. Li ◽  
J. Wu ◽  
E. E. Haller ◽  
W. Walukiewicz ◽  
W. Shan ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Pressure Dependence ◽  
Group Iii ◽  
Nitride Alloys ◽  
Group Iii Nitride

scholarly journals Properties of InN layers grown by High Pressure CVD

2006 ◽  
Vol 955 ◽  
Author(s):  
Mustafa Alevli ◽  
Goksel Durkaya ◽  
Ronny Kirste ◽  
Aruna Weesekara ◽  
Unil Perera ◽  
...  
Keyword(s):  
High Pressure ◽  
High Speed ◽  
Growth Parameters ◽  
Free Carrier ◽  
Dielectric Constants ◽  
High Quality ◽  
Group Iii ◽  
High Efficient ◽  
Nitride Alloys ◽  
Group Iii Nitride

ABSTRACTIndium nitride (InN) and indium-rich group III-nitride alloys are promising materials for advanced optoelectronic device applications. Indium-rich alloys, e.g. (Ga1-y-xAlyInx)N will enable the fabrication of high-efficient light emitting diodes tunable in the whole visible spectral region, as well as advanced high speed optoelectronics for optical communication operating. The present limitation in this area is the growth of high quality InN and indium-rich group III-nitride alloys as documented in many controversial reports on the true physical properties of InN. The difficulties arise from the low dissociation temperature of InN that requires an extraordinarily high nitrogen overpressure to stabilize the material up to optimum growth temperatures. We developed a novel “high-pressure chemical vapor deposition” (HPCVD) system, capable to control and analyze the vast different partial pressures of the constituents. Our results show that the chosen HPCVD pathway leads to high-quality single crystalline InN, demonstrating that HPCVD is a viable tool for the growth of indium rich group III nitride alloys. The structural analysis of InN deposited on GaN-sapphire substrate by XRD show single phase InN(0002) peaks with full width half maximum (FWHM) around 400 arcsec. Infrared reflectance spectroscopy is used to analyze the plasmon frequencies, high frequency dielectric constants, the free carrier concentrations and carrier mobilities in these layers. For nominal undoped InN layers, free carrier concentrations in the mid 1019 cm−3 and mobilities around 600 cm−2-V-1-s-1 are observed. Further improvements are expected as the growth parameters are optimized. The explored growth parameters are close to of those employed for GaN growth conditions, which is a major step towards the fabrication of indium rich (Ga1−y−xAlyInx)N alloys and heterostructures.

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