Effects of oxygen annealing on single crystal iron telluride

2019 ◽  
Vol 567 ◽  
pp. 1253400 ◽  
Author(s):  
Nathaniel Smith ◽  
David Gelting ◽  
Ali C. Basaran ◽  
Marvin Schofield ◽  
Ivan K. Schuller ◽  
...  
Keyword(s):  
Single Crystal ◽  
Oxygen Annealing ◽  
Iron Telluride

scholarly journals Dynamics and mechanism of oxygen annealing in Fe1+yTe0.6Se0.4 single crystal

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Yue Sun ◽  
Yuji Tsuchiya ◽  
Toshihiro Taen ◽  
Tatsuhiro Yamada ◽  
Sunseng Pyon ◽  
...  
Keyword(s):  
Single Crystal ◽  
Oxygen Annealing

Effect of Oxygen Annealing on Domain Structure and Dielectric Properties of 0.91PZN-0.09PT Single Crystal

2005 ◽  
Vol 326 (1) ◽  
pp. 37-41 ◽  
Author(s):  
Gurvinderjit Singh ◽  
Indranil Bhaumik ◽  
V. S. Tiwari ◽  
S. Ganesamoorthy ◽  
V. K. Wadhawan
Keyword(s):  
Dielectric Properties ◽  
Single Crystal ◽  
Domain Structure ◽  
Oxygen Annealing ◽  
Effect Of Oxygen

scholarly journals Distribution of oxidation states of Cr ions in Ca or Ca/Mg co-doped Cr:Y3Al5O12 single-crystal fibers with nitrogen or oxygen annealing environments

2008 ◽  
Vol 310 (11) ◽  
pp. 2774-2779 ◽  
Author(s):  
Cheng-Nan Tsai ◽  
Kuang-Yao Huang ◽  
Hann-Jong Tsai ◽  
Jian-Cheng Chen ◽  
Yen-Sheng Lin ◽  
...  
Keyword(s):  
Single Crystal ◽  
Oxidation States ◽  
Oxygen Annealing ◽  
Crystal Fibers ◽  
Co Doped

Improved Thermal Stability of Ultrathin CoSi2 Layers by Oxygen Annealing

1998 ◽  
Vol 514 ◽  
Author(s):  
R. T. Tung ◽  
S. Ohmi
Keyword(s):  
Thermal Stability ◽  
Single Crystal ◽  
Surface Diffusion ◽  
Primary Reason ◽  
Oxygen Annealing ◽  
Kinetic Processes ◽  
Thermal Stability Of

ABSTRACTThe thermal stability of thin CoSi2 layers is demonstrated to improve with the use of oxygen-containing annealing ambients. Layer agglomeration in epitaxial and polycrystalline CoSi2 layers grown on single crystal Si and polycrystalline CoSi2 layers grown on α-Si was retarded by oxygen annealing. A thin SiO2 layer grown during oxygen anneals which curbs surface diffusion and reduces the rates of kinetic processes is thought to be the primary reason for the improvement in CoSi2 thermal stability.

Single crystal growth and structural properties of iron telluride doped with nickel

2010 ◽  
Vol 45 (12) ◽  
pp. 1316-1320 ◽  
Author(s):  
P. Zajdel ◽  
M. Zubko ◽  
J. Kusz ◽  
M. A. Green
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Structural Properties ◽  
Single Crystal Growth ◽  
Iron Telluride

The effects of oxygen annealing on transition-metal implanted single-crystal YBa2Cu3O7−δ

1995 ◽  
Vol 247 (1-2) ◽  
pp. 34-42 ◽  
Author(s):  
J.W. Martin ◽  
G.J. Russell ◽  
D.D. Cohen ◽  
A. Hartmann
Keyword(s):  
Transition Metal ◽  
Single Crystal ◽  
Oxygen Annealing

A Preparation of High Resolution Standards for Electron Microscopy. Part II

1971 ◽  
Vol 29 ◽  
pp. 160-161
Author(s):  
Akira Tanaka ◽  
David F. Harling
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Carbon Black ◽  
Single Crystal ◽  
Dark Field ◽  
Graphitized Carbon Black ◽  
Graphitized Carbon ◽  
Dark Field Imaging ◽  
Crystal Films ◽  
Micro Holes

In the previous paper, the author reported on a technique for preparing vapor-deposited single crystal films as high resolution standards for electron microscopy. The present paper is intended to describe the preparation of several high resolution standards for dark field microscopy and also to mention some results obtained from these studies. Three preparations were used initially: 1.) Graphitized carbon black, 2.) Epitaxially grown particles of different metals prepared by vapor deposition, and 3.) Particles grown epitaxially on the edge of micro-holes formed in a gold single crystal film.The authors successfully obtained dark field micrographs demonstrating the 3.4Å lattice spacing of graphitized carbon black and the Au single crystal (111) lattice of 2.35Å. The latter spacing is especially suitable for dark field imaging because of its preparation, as in 3.), above. After the deposited film of Au (001) orientation is prepared at 400°C the substrate temperature is raised, resulting in the formation of many square micro-holes caused by partial evaporation of the Au film.

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