Preparation of SmBiO3 buffer layer on YSZ substrate by an improved chemical solution deposition route

2016 ◽  
Vol 531 ◽  
pp. 60-66
Author(s):  
Xiaolei Zhu ◽  
Minghua Pu ◽  
Yong Zhao
Keyword(s):  
Buffer Layer ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition

BiFeO3 thin films prepared on metallic Ni tapes by chemical solution deposition: effects of annealing temperature and a La0.5Sr0.5TiO3 buffer layer on the dielectric, ferroelectric and leakage properties

RSC Advances ◽  
2014 ◽  
Vol 4 (62) ◽  
pp. 32738-32743 ◽  
Author(s):  
Xianwu Tang ◽  
Ling Hu ◽  
Jie Yang ◽  
Li Chen ◽  
Jianming Dai ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Chemical Solution Deposition ◽  
Annealing Temperature ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Bifeo3 Thin Films

Introducing a La0.5Sr0.5TiO3 buffer layer is beneficial for the microstructures and properties of BiFeO3 thin films on metallic tapes.

FABRICATION OF SmBiO3/NiO DOUBLE BUFFER LAYER FOR COATED CONDUCTORS

2013 ◽  
Vol 27 (15) ◽  
pp. 1362018 ◽  
Author(s):  
MING LEI ◽  
XINSHENG YANG ◽  
YONG ZHAO
Keyword(s):  
Free Surface ◽  
Buffer Layer ◽  
Flow Rate ◽  
Chemical Solution Deposition ◽  
Surface Oxidation ◽  
Coated Conductors ◽  
Chemical Solution ◽  
Solution Deposition

NiO layers were prepared in Ar flow at temperatures between 750°C to 850°C by using surface oxidation epitaxial method on Ni –5%W alloy substrates. NiO (200) buffer layer with well textured, smooth, dense and crack-free surface was prepared in Ar ambience with a flow rate of 500 ml/min at 800°C for 10.0 min. Then SmBiO 3 buffer layer was coated on the well epitaxial NiO (200) layer by chemical solution deposition (CSD) method.

Zirconium Doped Yttria as a Buffer Layer for GdBCO Superconductors Deposited by Chemical Solution Deposition

2015 ◽  
Vol 7 (7) ◽  
pp. 1258-1264 ◽  
Author(s):  
Young-Soon Kim ◽  
Yu-Ri Lee ◽  
Jae-Hun Lee ◽  
Seung-Hyun Moon ◽  
Hunju Lee
Keyword(s):  
Buffer Layer ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition

A new single buffer layer for YBCO coated conductors prepared by chemical solution deposition

2007 ◽  
Vol 452 (1-2) ◽  
pp. 43-47 ◽  
Author(s):  
Guo Li ◽  
Minghua Pu ◽  
Xiaohua Du ◽  
Yanbing Zhang ◽  
Huaming Zhou ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Chemical Solution Deposition ◽  
Coated Conductors ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Ybco Coated Conductors

Advanced titania buffer layer architectures prepared by chemical solution deposition

2011 ◽  
Vol 24 (8) ◽  
pp. 085018 ◽  
Author(s):  
J Kunert ◽  
M Bäcker ◽  
O Brunkahl ◽  
D Wesolowski ◽  
C Edney ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition

Chemically Deposited (100)-Oriented BaTiO3 Films with Highly Concentrated Solution Using High Crystallinity BaTiO3 as a Buffer Layer

2006 ◽  
Vol 320 ◽  
pp. 77-80 ◽  
Author(s):  
Yi Ping Guo ◽  
Kazuyuki Suzuki ◽  
Kaori Nishizawa ◽  
Takeshi Miki ◽  
Kazumi Kato
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Chemical Solution Deposition ◽  
Remanent Polarization ◽  
Chemical Solution ◽  
Si Substrate ◽  
Solution Deposition ◽  
High Crystallinity ◽  
Batio3 Thin Film ◽  
Concentrated Solution

BaTiO3 films with thickness of ~1 2m were prepared by chemical solution deposition on LaNiO3/Pt/TiOx/SiO2/Si substrate with a thin highly (100)-oriented and high crystallinity BaTiO3 thin film (~140 nm) as a buffer layer. The BaTiO3 films prepared by using a 0.5 mol/L solution have high crystallinity and still show (100) preferred orientation. The electrical properties of the (100)-oriented BaTiO3 films prepared by this process have been studied. A dielectric constant of ~910 and a loss tangent of ~3.5% (1 kHz) were obtained. The remanent polarization (2 Pr) and coercive field (2 Ec) are 4.0 μC/cm2 and 35 kV/cm, respectively.

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