Electrical transport properties influenced by surface barriers in a high-Tc superconducting strip

2008 ◽  
Vol 468 (15-20) ◽  
pp. 1274-1277
Author(s):  
M. Tange ◽  
R. Yoshizaki
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties ◽  
High Tc ◽  
Surface Barriers

Effect of sintering periods on the microstructure and electrical transport properties of high-Tc superconducting Bi–(Pb)–Sr–Ca–Cu–O tapes

1996 ◽  
Vol 11 (5) ◽  
pp. 1101-1107 ◽  
Author(s):  
N. V. Vo ◽  
H. K. Liu ◽  
S. X. Dou
Keyword(s):  
Critical Current Density ◽  
Transport Properties ◽  
Grain Growth ◽  
Electrical Transport ◽  
Critical Currents ◽  
Electrical Transport Properties ◽  
High Tc ◽  
Grain Alignment ◽  
The Core ◽  
Silver Matrix

The effect of sintering periods for monocore (Bi, Pb)2Sr2Ca2Cu3O10+x (Bi-2223) tapes on microstructure and critical current density (Jc) have been studied. The results show that long sintering periods (of duration ≥100 h) give better grain growth, but greater misalignment. Prolonged sintering also necessitates the increase in porosity of the core due to random grain growth, increasing the chance of penetrating into the silver matrix and oxide core interface. Critical currents for long sintering periods are found to be lower in comparison with those obtained for slightly shorter sintering periods. The increase in frequency of intermediate cold uniaxial pressing between sintering periods assists grain alignment. However, when the sintering period is further reduced by increasing the frequency of intermediate deformation, it is found that microcracks are unable to heal as there is not enough time for grain regrowth. The tapes made using “three-to-four-sinter-period” (each period ∼60 h) show superior electrical transport properties which are attributable to the fact that their oxide core is more dense and better aligned relative to the “two-sinter-period” (each period ≥100 h) tapes and contain less cracks relative to the “five-to-six-sinter-period” (each period ∼40 h) tapes.

scholarly journals Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong
Keyword(s):  
Transport Properties ◽  
Gold Nanoparticle ◽  
Electrical Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Electrical Transport Properties ◽  
Noncovalent Functionalization ◽  
Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

scholarly journals Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang
Keyword(s):  
Phase Transition ◽  
Electrical Conductivity ◽  
High Pressure ◽  
Phase Transformation ◽  
Transport Properties ◽  
Electrical Transport ◽  
Structural Phase ◽  
Structure Evolution ◽  
Systematic Research ◽  
Electrical Transport Properties

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.

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