Structural and electrical properties of SrRuO3 thin films for buffer layers of coated conductors

2007 ◽  
Vol 463-465 ◽  
pp. 584-588 ◽  
Author(s):  
M.R. Choi ◽  
W. Jo ◽  
Y.S. Oh ◽  
K.H. Kim ◽  
Y.-M. Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Structural And Electrical Properties

Influence of Ta2O5, TiO2, and ZrO2 Interfacial Layers on Structural and Electrical Properties of Laser Ablated Ba0.5Sr0.5TiO3 Thin Films

2002 ◽  
Vol 748 ◽  
Author(s):  
Suprem R. Das ◽  
Rasmi R. Das ◽  
P. Bhattacharya ◽  
Ram S. Katiyar
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Buffer Layers ◽  
Bst Thin Films ◽  
Interfacial Layers ◽  
Average Grain Size ◽  
Structural And Electrical Properties

ABSTRACTPulsed laser deposition technique was used to fabricate Ba0.5Sr0.5TiO 3 (BST) thin-films on Pt/TiO 2/SiO2/Si substrates. The influence of thin interfacial layers of Ta2O5, TiO2, and ZrO2, on the structural and electrical properties of BST thin films was investigated. Insertion of interfacial layers does not affect the perovskite phase formation of BST thin films. Buffer layers helped to make uniform distribution of grains and resulted in a relative increase in the average grain size. The dielectric tunability of BST thin films was reduced with the presence of buffer layers. A BST thin film having a dielectric permitivity of 470 reduced to 337, 235 and 233 in the presence of Ta2O5, TiO2, and ZrO2 layers, respectively. The reduction of the relative dielectric permittivity of BST films with the insertion of interfacial layers was explained in terms of a series capacitance effect, due to the low dielectric constant of interfacial layers. The TiO2 layer did not show any appreciable change in the leakage current density. Deposition of thin Ta2O5 and ZrO2 interfacial layer on top of Pt reduced the leakage current density by an order of magnitude.

Influence of LaNiO3 and LaNi0.5Mn0.5O3 Buffer Layers on the Structural and Electrical Properties of BiNi0.5Mn0.5O3 Thin Films

2015 ◽  
Vol 44 (10) ◽  
pp. 3783-3787 ◽  
Author(s):  
Xian-Xiong Huang ◽  
Xin-Gui Tang ◽  
Ju-Lan Lai ◽  
Yan-Ping Jiang ◽  
Qiu-Xiang Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layers ◽  
Structural And Electrical Properties

Structural and Electrical Properties of Thermally Evaporated SnxSe1-x Thin Films

2011 ◽  
Vol 3 (10) ◽  
pp. 1-4 ◽  
Author(s):  
Bushra A Hasan ◽  
◽  
Ghuson H Mohamed ◽  
Amer A Ramadhan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Structural And Electrical Properties

scholarly journals Influence of the crystallization thermal treatment on the structural and electrical properties of PZT thin films

2004 ◽  
Vol 7 (2) ◽  
pp. 363-367 ◽  
Author(s):  
Antonio Leondino Bacichetti Junior ◽  
Manuel Henrique Lente ◽  
Ricardo Gonçalves Mendes ◽  
Pedro Iris Paulin Filho ◽  
José Antonio Eiras
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Treatment ◽  
Pzt Thin Films ◽  
Structural And Electrical Properties

scholarly journals Structural and Electrical Studies on ZnO-Based Thin Films by Laser Irradiation

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Shanyue Zhao ◽  
Yinqun Hua ◽  
Ruifang Chen ◽  
Jian Zhang ◽  
Ping Ji
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Properties ◽  
Grain Boundaries ◽  
Laser Irradiation ◽  
Nonlinear Coefficient ◽  
Acceptor State ◽  
Xrd Pattern ◽  
Electrical Studies ◽  
Structural And Electrical Properties

The effects of laser irradiation on the structural and electrical properties of ZnO-based thin films were investigated. The XRD pattern shows that the thin films were highly textured along thec-axis and perpendicular to the surface of the substrate. Raman spectra reveal that Bi2O3segregates mainly at ZnO-ZnO grain boundaries. After laser irradiation processing, the grain size of the film was reduced significantly, and the intrinsic atomic defects of grain boundaries and Bi element segregated at the grain boundary were interacted frequently and formed the composite defects of acceptor state. The nonlinear coefficient increased to 24.31 and the breakdown voltage reduced to 5.34 V.

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