scholarly journals Planar hole-doping concentration and effective three-dimensional hole-doping concentration for single-layer high-Tc superconductors

2007 ◽  
Vol 460-462 ◽  
pp. 809-810
Author(s):  
Tatsuya Honma ◽  
Pei Herng Hor
2003 ◽  
Vol 17 (18n20) ◽  
pp. 3433-3435
Author(s):  
Qing-Hu Chen ◽  
Xiao Hu

We performed large-scale simulations in the current-driven three-dimensional frustrated anisotropic XY model in the presense of point-like defects with resistively-shunted junction dynamics. A moving Bragg (BrG) glass is observed applying the current in the equilibrium BrG state. The first-order phase transition from the moving BrG to the moving smectic is clarified. The effect of disorder become weak once the vortex matter is set in motion.


1998 ◽  
Vol 12 (29n31) ◽  
pp. 2954-2957
Author(s):  
Sung-Ho Suck Salk

A scenario for the possibility of hole-pairing is introduced on the basis of the phase diagram involving the spingap phase and the superconducting order for high-T c superconductors. Using our earlier generalized scattering theory, a theory of hole-pairing is proposed by allowing interaction between the negatively charged singlet pair and the positively charged holes as a result of hole doping.


2021 ◽  
Vol 6 (3) ◽  
pp. 33
Author(s):  
Tharathep Plienbumrung ◽  
Michael Thobias Schmid ◽  
Maria Daghofer ◽  
Andrzej M. Oleś

We investigate charge distribution in the recently discovered high-Tc superconductors, layered nickelates. With increasing value of charge-transfer energy, we observe the expected crossover from the cuprate to the local triplet regime upon hole doping. We find that the d−p Coulomb interaction Udp makes Zhang-Rice singlets less favorable, while the amplitude of local triplets at Ni ions is enhanced. By investigating the effective two-band model with orbitals of x2−y2 and s symmetries we show that antiferromagnetic interactions dominate for electron doping. The screened interactions for the s band suggest the importance of rare-earth atoms in superconducting nickelates.


Open Physics ◽  
2004 ◽  
Vol 2 (2) ◽  
Author(s):  
Alexander Andreev ◽  
Stefka Tsintsarska ◽  
Maria Dimitrova-Ivanovich ◽  
Ivaylo Polyanski ◽  
Mladen Georgiev ◽  
...  

AbstractThe temperatureT dependencies ρ(T) of normal state electric resistivitiesρ c (axial) andρ ab (in plane) of single-layer high-T c superconductors show common trends: AsT is raised, the resistivity first drops steeply before it starts rising αT above an apparent semiconductor-to-metal crossoverT cross. To analyze ρ(T) we plottT/ρ againstT at various dopingsx for bothρ c andρ ab.T/ρ is inversely proportional to the traversal time across a potential barrier as an ionic particle drifts in an electric field. We findT/ρ in good agreement with theT dependence of the quantum rate of migrating particles: AsT is raised, a zero-point rate at the lowestT is extended to a nearly flat plateau before a thermally activated branch sets in. We also find evidence for the admixture of 1- & 2-phonon absorptions below the Arrhenius range. These features shape the semiconductor-like branch below Tcross. AboveT cross a metallic-like branch sets in, its αT character deriving from the field coupling of the migrating particle. Our analysis suggests that metal physics may not suffice if ionic features play a role in transport. We attribute our conclusions to the drift of strong-coupling polarons along Cu−O bonds. These “bond polarons” originate from carrier scattering by double-well potentials associated with the bonds. A bond polaron dissociates to a free hole as it passes onto a neighboring O-O link.


2003 ◽  
Vol 17 (18n20) ◽  
pp. 3231-3235
Author(s):  
Sung-Sik Lee ◽  
Sung-Ho Suck Salk

The doping dependence of the bose condensation energy is investigated by using our SU (2) holon-pair boson theory. It is shown that the bose condensation energy U results from the interplay between the charge and spin degrees of freedom and that the doping dependence of U at T=0K is well fit by the relation, [Formula: see text] with Δ0, the spin gap at 0K; x, the hole doping concentration and α, a constant.


1989 ◽  
Vol 03 (18) ◽  
pp. 1393-1400
Author(s):  
TATSUYA NAGAO ◽  
HIROYUKI MORI ◽  
FUMIKO YONEZAWA

Using a phenomenological model for layered superconductors, we derive a formalism for the critical temperature T c in terms of the layer numbers. We show that T c of a system of n identical layers is the same as that of a single layer for all values of n. In a periodic layered structure composed of two kinds of layers, T c increases monotonically with the number of higher-T c layers. When the carrier number depends on structure, T c shows a behavior consistent with the experimental data on some high-T c superconductors such as Tl and Bi families. We make a suggestion to achieve a higher T c .


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