Relationship between 1/f noise parameter and Andreev reflection probability of epitaxial NbN/AlN or MgO/NbN tunnel junctions

2004 ◽  
Vol 412-414 ◽  
pp. 1459-1462
Author(s):  
H. Ishida ◽  
A. Kawakami ◽  
Z. Wang ◽  
K. Hamasaki
Keyword(s):  
Andreev Reflection ◽  
Tunnel Junctions ◽  
Noise Parameter ◽  
Reflection Probability

Direct determination of the Andreev reflection probability by means of point contact spectroscopy

2000 ◽  
Vol 76 (9) ◽  
pp. 1152-1154 ◽  
Author(s):  
M. Jakob ◽  
H. Stahl ◽  
J. Knoch ◽  
J. Appenzeller ◽  
B. Lengeler ◽  
...  
Keyword(s):  
Andreev Reflection ◽  
Point Contact ◽  
Direct Determination ◽  
Point Contact Spectroscopy ◽  
Reflection Probability

Spectroscopic measurements on the Andreev reflection probability as a function of temperature

2000 ◽  
Vol 77 (4) ◽  
pp. 549-551
Author(s):  
J. Appenzeller ◽  
M. Jakob ◽  
H. Stahl ◽  
J. Knoch ◽  
B. Lengeler
Keyword(s):  
Andreev Reflection ◽  
Spectroscopic Measurements ◽  
Reflection Probability

Tantalum superconducting tunnel junctions for photon counting detectors

2002 ◽  
Vol 12 (3) ◽  
pp. 145-148
Author(s):  
C. Jorel ◽  
P. Feautrier ◽  
J.-C. Villégier ◽  
A. Benoit
Keyword(s):  
Tunnel Junctions ◽  
Photon Counting ◽  
Superconducting Tunnel Junctions ◽  
Photon Counting Detectors

Tunnel Magnetoresistance Effect for Double Tunnel Junctions with Al Intermediate Layer.

2001 ◽  
Vol 25 (4−2) ◽  
pp. 767-770 ◽  
Author(s):  
T. Daibou ◽  
M. Oogane ◽  
Y. Ando ◽  
C. Kim ◽  
O. Song ◽  
...  
Keyword(s):  
Intermediate Layer ◽  
Tunnel Junctions ◽  
Magnetoresistance Effect ◽  
Tunnel Magnetoresistance
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