Growth of high quality Bi2Sr2CaCu2Oy single crystals by the modified vertical Bridgman method

2004 ◽  
Vol 412-414 ◽  
pp. 607-609 ◽  
Author(s):  
O. Nagashima ◽  
H. Tanaka ◽  
Y. Echizen ◽  
S. Kishida
Keyword(s):  
Single Crystals ◽  
Bridgman Method ◽  
High Quality ◽  
Vertical Bridgman Method ◽  
Vertical Bridgman

Synthesis and Bridgman Growth of Ga2S3 Crystals

2016 ◽  
Vol 683 ◽  
pp. 71-76 ◽  
Author(s):  
Konstantin Kokh ◽  
Ivan N. Lapin ◽  
Valery Svetlichnyi ◽  
Perizat Galiyeva ◽  
Askar Bakhadur ◽  
...  
Keyword(s):  
Phase Transition ◽  
Solution Method ◽  
Damage Threshold ◽  
Chemical Transport ◽  
Bridgman Method ◽  
Monoclinic Structure ◽  
High Quality ◽  
Vertical Bridgman Method ◽  
Vertical Bridgman ◽  
Transport Method

In this work, Ga2S3 crystals were obtained by vertical Bridgman method. The presence of cracks in the grown crystals was interpreted as a result of phase transition into monoclinic structure during cooling. This suggests the use of another approach for the growth of high quality samples, e.g. chemical transport method or melt-solution method. Maximal transparency range of 0.48-22.5 μm and at least 10 times higher damage threshold to that for GaSe render anisotropic Ga2S3 crystal among the most prospective crystals for nonlinear applications.

Growth of High-Tc Superconducting Single Crystals by a Vertical Bridgman Method

1999 ◽  
pp. 681-684
Author(s):  
Eiji Hosokawa ◽  
Masaki Nakamura ◽  
Satoru Kishida ◽  
Heizo Tokutaka
Keyword(s):  
Single Crystals ◽  
Bridgman Method ◽  
High Tc ◽  
Vertical Bridgman Method ◽  
Vertical Bridgman
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