XRD and TEM studies of as-grown MgB2 thin films deposited on r- and c-plane sapphire substrates

2004 ◽  
Vol 412-414 ◽  
pp. 1366-1370 ◽  
Author(s):  
A. Saito ◽  
H. Shimakage ◽  
A. Kawakami ◽  
Z. Wang ◽  
K. Kuroda ◽  
...  
2008 ◽  
Vol 22 (08) ◽  
pp. 991-996
Author(s):  
G. ILONCA ◽  
T. R. YANG ◽  
A. V. POP ◽  
P. BALINT ◽  
M. BODEA ◽  
...  

MgB 2 thin films were deposited at low temperature substrates, in situ, on c-plane sapphire substrates, with the aluminium nitride (AlN) buffer layers, using the multiple-target sputtering system. The magnetoresistivities were measured using dc-five probe method in applied magnetic field up to 9 Tesla. The upper critical field anisotropy, HC2(T) and irreversibility field H irr (T) versus temperature were determined. The Hall coefficients RH are slightly temperature dependent and positive in the normal state. The critical temperature of 30–32 K and critical current density of 106-107 A/cm 2 at 4.2 K were obtained. Using extracted data, the coherence length ξo, anisotropic coefficient γ and penetration depth λL were calculated.


2021 ◽  
Vol 22 ◽  
pp. 14-19
Author(s):  
Soon-Gil Jung ◽  
Duong Pham ◽  
Jung Min Lee ◽  
Yoonseok Han ◽  
Won Nam Kang ◽  
...  

2001 ◽  
Vol 703 ◽  
Author(s):  
Huiping Xu ◽  
Adam T. Wise ◽  
Timothy J. Klemmer ◽  
Jörg M. K. Wiezorek

ABSTRACTA combination of XRD and TEM techniques have been used to characterize the response of room temperature magnetron sputtered Fe-Pd thin films on Si-susbtrates to post-deposition order-annealing at temperatures between 400-500°C. Deposition produced the disordered Fe-Pd phase with (111)-twinned grains approximately 18nm in size. Ordering occurred for annealing at 450°C and 500°C after 1.8ks, accompanied by grain growth (40-70nm). The ordered FePd grains contained (111)-twins rather than {101}-twins typical of bulk ordered FePd. The metallic overlayers and underlayers selected here produced detrimental dissolution (Pt into Fe-Pd phases) and precipitation reactions between Pd and the Si substrate.


1982 ◽  
Vol 21 (Part 1, No. 10) ◽  
pp. 1427-1430 ◽  
Author(s):  
Keiichi Tanabe ◽  
Osamu Michikami

2013 ◽  
Vol 26 (5) ◽  
pp. 1563-1568 ◽  
Author(s):  
Chenggang Zhuang ◽  
Teng Tan ◽  
Alex Krick ◽  
Qingyu Lei ◽  
Ke Chen ◽  
...  

1993 ◽  
Vol 74 (7) ◽  
pp. 4430-4437 ◽  
Author(s):  
T. Lei ◽  
K. F. Ludwig ◽  
T. D. Moustakas

2015 ◽  
Vol 516 ◽  
pp. 27-30
Author(s):  
Kehuan Linghu ◽  
Qingjun Song ◽  
Huai Zhang ◽  
QianQian Yang ◽  
Jibo Zhang ◽  
...  

2013 ◽  
Vol 364 ◽  
pp. 30-33 ◽  
Author(s):  
Norihiro Suzuki ◽  
Kentaro Kaneko ◽  
Shizuo Fujita

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