Preparation, scaling behavior of activation energy, Hall effect, and flux-flow anisotropy of (Hg0.9Re0.1)Ba2CaCu2O6+δHTS thin films

2004 ◽  
Vol 402 (4) ◽  
pp. 354-364 ◽  
Author(s):  
A. Salem ◽  
G. Jakob ◽  
H. Adrian
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Hall Effect ◽  
Scaling Behavior ◽  
Flux Flow ◽  
Flow Anisotropy

Scaling behavior of mixed-state hall effect in MgB2 thin films

2006 ◽  
Vol 450 (1-2) ◽  
pp. 114-117 ◽  
Author(s):  
Soon-Gil Jung ◽  
W.K. Seong ◽  
W.N. Kang ◽  
Eun-Mi Choi ◽  
Heon-Jung Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Mixed State ◽  
Scaling Behavior ◽  
Mgb2 Thin Films

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Hall effect in thin films of nickel-phosphorus

1971 ◽  
Vol 21 (4-5) ◽  
pp. 587-590
Author(s):  
J. Flechon ◽  
M. Viard
Keyword(s):  
Thin Films ◽  
Hall Effect

The activation energy U(T,B) in high temperature superconductor

2020 ◽  
Vol 92 (2) ◽  
pp. 20601
Author(s):  
Abdelaziz Labrag ◽  
Mustapha Bghour ◽  
Ahmed Abou El Hassan ◽  
Habiba El Hamidi ◽  
Ahmed Taoufik ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Activation Energy ◽  
Phase Diagram ◽  
High Temperature ◽  
Apparent Activation Energy ◽  
High Temperature Superconductor ◽  
Flux Flow ◽  
Resistivity Measurements ◽  
Vortex Phase ◽  
The Magnetic Field

It is reported in this paper on the thermally assisted flux flow in epitaxial YBa2Cu3O7-δ deposited by Laser ablation method on the SrTiO3 substrate. The resistivity measurements ρ (T, B) of the sample under various values of the magnetic field up to 14T in directions B∥ab-plane and B∥c-axis with a dc weak transport current density were investigated in order to determine the activation energy and then understand the vortex dynamic phenomena and therefore deduce the vortex phase diagram of this material. The apparent activation energy U0 (B) calculated using an Arrhenius relation. The measured results of the resistivity were then adjusted to the modified thermally assisted flux flow model in order to account for the temperature-field dependence of the activation energy U (T, B). The obtained values from the thermally assisted activation energy, exhibit a behavior similar to the one showed with the Arrhenius model, albeit larger than the apparent activation energy with ∼1.5 order on magnitude for both cases of the magnetic field directions. The vortex glass model was also used to obtain the vortex-glass transition temperature from the linear fitting of [d ln ρ/dT ] −1 plots. In the course of this work thanks to the resistivity measurements the upper critical magnetic field Hc2 (T), the irreversibility line Hirr (T) and the crossover field HCrossOver (T) were located. These three parameters allowed us to establish a phase diagram of the studied material where limits of each vortex phase are sketched in order to optimize its applicability as a practical high temperature superconductor used for diverse purposes.

scholarly journals Tailoring the anomalous Hall effect of SrRuO3 thin films by strain: A first principles study

2021 ◽  
Vol 129 (9) ◽  
pp. 093904
Author(s):  
Kartik Samanta ◽  
Marjana Ležaić ◽  
Stefan Blügel ◽  
Yuriy Mokrousov
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
First Principles ◽  
Anomalous Hall Effect ◽  
First Principles Study

Second Activation Energy in the Fractional Quantum Hall Effect

1987 ◽  
Vol 56 (9) ◽  
pp. 3005-3008 ◽  
Author(s):  
Junichi Wakabayashi ◽  
Satoru Sudou ◽  
Shinji Kawaji ◽  
Kazuhiko Hirakawa ◽  
Hiroyuki Sakaki
Keyword(s):  
Activation Energy ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Fractional Quantum Hall Effect ◽  
Fractional Quantum ◽  
Fractional Quantum Hall

Topological Hall effect in thin films of the Heisenberg ferromagnet EuO

2015 ◽  
Vol 91 (24) ◽  
Author(s):  
Y. Ohuchi ◽  
Y. Kozuka ◽  
M. Uchida ◽  
K. Ueno ◽  
A. Tsukazaki ◽  
...  
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Heisenberg Ferromagnet ◽  
Topological Hall Effect
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