Effects of inelastic interaction of the non-equilibrium electrons with the neutral impurities on the non-ohmic characteristics of a compensated semiconductor compound at low lattice temperatures

2021 ◽  
Vol 608 ◽  
pp. 412758
Author(s):  
S. Saha ◽  
S. Mukhopadhyay ◽  
D.P. Bhattacharya
Author(s):  
R. Hutchings ◽  
I.P. Jones ◽  
M.H. Loretto ◽  
R.E. Smallman

There is increasing interest in X-ray microanalysis of thin specimens and the present paper attempts to define some of the factors which govern the spatial resolution of this type of microanalysis. One of these factors is the spreading of the electron probe as it is transmitted through the specimen. There will always be some beam-spreading with small electron probes, because of the inevitable beam divergence associated with small, high current probes; a lower limit to the spatial resolution is thus 2αst where 2αs is the beam divergence and t the specimen thickness.In addition there will of course be beam spreading caused by elastic and inelastic interaction between the electron beam and the specimen. The angle through which electrons are scattered by the various scattering processes can vary from zero to 180° and it is clearly a very complex calculation to determine the effective size of the beam as it propagates through the specimen.


Author(s):  
Ernest L. Hall ◽  
J. B. Vander Sande

The present paper describes research on the mechanical properties and related dislocation structure of CdTe, a II-VI semiconductor compound with a wide range of uses in electrical and optical devices. At room temperature CdTe exhibits little plasticity and at the same time relatively low strength and hardness. The mechanical behavior of CdTe was examined at elevated temperatures with the goal of understanding plastic flow in this material and eventually improving the room temperature properties. Several samples of single crystal CdTe of identical size and crystallographic orientation were deformed in compression at 300°C to various levels of total strain. A resolved shear stress vs. compressive glide strain curve (Figure la) was derived from the results of the tests and the knowledge of the sample orientation.


Author(s):  
Edward A Kenik

Segregation of solute atoms to grain boundaries, dislocations, and other extended defects can occur under thermal equilibrium or non-equilibrium conditions, such as quenching, irradiation, or precipitation. Generally, equilibrium segregation is narrow (near monolayer coverage at planar defects), whereas non-equilibrium segregation exhibits profiles of larger spatial extent, associated with diffusion of point defects or solute atoms. Analytical electron microscopy provides tools both to measure the segregation and to characterize the defect at which the segregation occurs. This is especially true of instruments that can achieve fine (<2 nm width), high current probes and as such, provide high spatial resolution analysis and characterization capability. Analysis was performed in a Philips EM400T/FEG operated in the scanning transmission mode with a probe diameter of <2 nm (FWTM). The instrument is equipped with EDAX 9100/70 energy dispersive X-ray spectrometry (EDXS) and Gatan 666 parallel detection electron energy loss spectrometry (PEELS) systems. A double-tilt, liquid-nitrogen-cooled specimen holder was employed for microanalysis in order to minimize contamination under the focussed spot.


Author(s):  
Michel Le Bellac ◽  
Fabrice Mortessagne ◽  
G. George Batrouni

1978 ◽  
Vol 39 (C6) ◽  
pp. C6-541-C6-542
Author(s):  
B. Pannetier ◽  
J. P. Maneval

1978 ◽  
Vol 39 (C6) ◽  
pp. C6-500-C6-502 ◽  
Author(s):  
J. Bindslev Hansen ◽  
P. Jespersen ◽  
P. E. Lindelof
Keyword(s):  

1979 ◽  
Vol 40 (C7) ◽  
pp. C7-871-C7-872
Author(s):  
E. F. Gippius ◽  
B. I. Iljukhin ◽  
V. N. Kolesnikov

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