scholarly journals Effect of growth temperature on surface morphology and optical properties of undoped Al0.32Ga0.68As

2020 ◽  
pp. 412619
Author(s):  
Hailiang Dong ◽  
Tiantian Jia ◽  
Zhigang Jia ◽  
Jian Liang ◽  
Xuguang Liu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Surface Morphology ◽  
Growth Temperature

Epitaxal growth of InGaN quantum dots grown by MOVPE: Effect of capping process on the structural and optical properties

2005 ◽  
Vol 892 ◽  
Author(s):  
Tomohiro Yamaguchi ◽  
Kathrin Sebald ◽  
Juergen Gutowski ◽  
Stephan Figge ◽  
Detlef Hommel
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Surface Morphology ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Electronic States ◽  
The Other ◽  
Structural And Optical Properties ◽  
Luminescence Efficiency ◽  
Protection Layer

AbstractThe surface morphology of thin InxGa1-xN layers in uncapped structures and the overgrowth using GaN or InxGa1-xN with a lower In content than the InxGa1-xN layer as the protection layer of the InxGa1-xN layer were investigated in addition to their dependence on growth temperature during the growth by metalorganic vapor phase epitaxy (MOVPE). It was necessary to decrease the growth temperature of the InxGa1-xN layer in order to realize homogeneous dots. In order to obtain a high luminescence efficiency, on the other hand, it was essential to increase the growth temperature of the protection layer. Sharp lines related to the localized electronic states, which are attributed to InGaN quantum dots, were observed by micro-photoluminescence (μ-PL) for the samples with the InxGa1-xN layers protected by the InxGa1-xN layers grown at 700∼740°C.

Optical Properties of Sputtered Silver Granular Films

2005 ◽  
Vol 480-481 ◽  
pp. 287-292 ◽  
Author(s):  
S.E. Paje ◽  
F. Teran ◽  
J.M. Riveiro ◽  
J. Llopis ◽  
M.A. García ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Optical Properties ◽  
Optical Absorption ◽  
Surface Morphology ◽  
Silver Clusters ◽  
Plasmon Excitation ◽  
Granular Films ◽  
Silver Films ◽  
Atomic Force ◽  
Atomic Force Micrographs

In this research we study optical absorption and morphology of silver films prepared with a sputtering method. Silver granular films are obtained on a glass substrate for films with thickness smaller than about 60 Å. Superficial silver clusters of around 100 nm in diameter are clearly seen in the atomic force micrographs. The absorption of these samples are characterized by plasmon excitation in the 450-650 nm spectral range, which differs from the known excitation of silver nanoparticles fabricated by different techniques. The optical absorption of silver granular films depend on sputtering conditions like substrate temperature or deposition rate and correlates with the surface morphology.

scholarly journals Fabrication of Transparent Mg(OH)2 Thin Films by Drop-Dry Deposition

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 724
Author(s):  
Tong Li ◽  
Masaya Ichimura
Keyword(s):  
Thin Films ◽  
Aqueous Solution ◽  
Optical Properties ◽  
Surface Morphology ◽  
Magnesium Hydroxide ◽  
Dry Deposition ◽  
Visible Range ◽  
Substrate Heating ◽  
Water Effects ◽  
Deposition Conditions

Magnesium hydroxide (Mg(OH)2) thin films were deposited by the drop-dry deposition (DDD) method using an aqueous solution containing Mg(NO3)2 and NaOH. DDD was performed by dropping the solution on a substrate, heating-drying, and rinsing in water. Effects of different deposition conditions on the surface morphology and optical properties of Mg(OH)2 thin films were researched. Films with a thickness of 1−2 μm were successfully deposited, and the Raman peaks of Mg(OH)2 were observed for them. Their transmittance in the visible range was 95% or more, and the bandgap was about 5.8 eV. It was found that the thin films have resistivity of the order of 105 Ωcm. Thus, the transparent and semiconducting Mg(OH)2 thin films were successfully prepared by DDD.

Nucleation and Heterointerface Structure of InAs Epilayers Grown on InP Substrates

1992 ◽  
Vol 280 ◽  
Author(s):  
K. S. Chandra Sekhar ◽  
A. K. Ballal ◽  
L. Salamanca-Riba ◽  
D. L. Partin
Keyword(s):  
Surface Morphology ◽  
Electronic Properties ◽  
Growth Temperature ◽  
High Speed ◽  
Interface Roughness ◽  
Structural Defects ◽  
Lower Growth ◽  
Substrate Interface ◽  
Film Substrate ◽  
Inp Substrates

ABSTRACTHeteroepitaxial growth of indium arsenide films on indium phosphide substrates is being actively pursued since the electronic properties of these films make them promising materials for optoelectronic and other high speed devices. The various structural aspects of the film that affect their electronic properties are structural defects like dislocations, film-substrate interface roughness and chemical inhomogeneities. In InAs films, electrons accumulate at the film-air interface, making surface morphology an important factor that decides the electronic properties. The InAs films used in this study were grown on InP substrates by metal organic vapor deposition, at different temperatures. A higher growth temperature not only resulted in poor surface morphology of the film, but also created a rough film-substrate interface. However, at all deposition temperatures, the film-substrate interfaces are sharp. At lower growth temperature, the interfaces were flat. Films grown at lower temperatures had good surface morphology and a flat and shaip heterointerface.

Synergistic improvements in the performance and stability of inverted planar MAPbI3-based perovskite solar cells incorporating benzylammonium halide salt additives

2021 ◽  
Author(s):  
Hung-Cheng Chen ◽  
Jie-Min Lan ◽  
Hsiang-Lin Hsu ◽  
Chia-Wei Li ◽  
Tien-Shou Shieh ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Solar Cells ◽  
Solar Cell ◽  
Surface Morphology ◽  
Perovskite Solar Cells ◽  
Cell Performance ◽  
Solar Cell Performance ◽  
Halide Salt

Three different benzylammonium halide (Cl, Br, and I) salts were investigated to elucidate their effects as additives on MAPbI3 perovskite surface morphology, crystal structure, optical properties, and solar cell performance and stability.

scholarly journals Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire

1999 ◽  
Vol 4 (S1) ◽  
pp. 634-641 ◽  
Author(s):  
M. Sumiya ◽  
T. Ohnishi ◽  
M. Tanaka ◽  
A. Ohtomo ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Metalorganic Chemical

Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2μm GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H2 atmosphere. It was considered that the systematic variation of the surface morphology was caused by the polarity composition of the buffer layer.

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