Numerical investigation of one-intermediate band InN/GaN QW solar cell under electric field, impurity and size effects

2021 ◽  
Vol 602 ◽  
pp. 412427
Author(s):  
Haddou El Ghazi
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Numerical Investigation ◽  
Size Effects ◽  
Intermediate Band

Key Photovoltaic Parameters of Organohalide Lead Perovskite Quantum Dot Intermediate Band Solar Cell: A Numerical Investigation

2021 ◽  
pp. 102884
Author(s):  
Sourav Roy ◽  
Nibir Mondol ◽  
Md. Sanwar Hossain ◽  
Ashraful Hossain Howlader ◽  
Md. Jubayer Hossain ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Numerical Investigation ◽  
Intermediate Band ◽  
Intermediate Band Solar Cell ◽  
Photovoltaic Parameters

Radiated Electric Field from a Solar Cell Module Set on the Ground Plane

2010 ◽  
Vol 130 (8) ◽  
pp. 724-732
Author(s):  
Ryosuke Hasegawa ◽  
Mariko Tomisawa ◽  
Masamitsu Tokuda
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Ground Plane ◽  
Cell Module ◽  
Solar Cell Module

New Optimized Intermediate Band (IB) Design to Improve ZnTeO Solar Cell Performances

2017 ◽  
Vol 9 (6) ◽  
pp. 06005-1-06005-4 ◽  
Author(s):  
B. Lakehal ◽  
◽  
Z. Dibi ◽  
N. Lakhdar ◽  
◽  
...  
Keyword(s):  
Solar Cell ◽  
Intermediate Band

scholarly journals Investigation of the Carrier Movement through the Tunneling Junction in the InGaP/GaAs Dual Junction Solar Cell Using the Electrically and Optically Biased Photoreflectance Spectroscopy

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 638
Author(s):  
Sanam SaeidNahaei ◽  
Hyun-Jun Jo ◽  
Sang Jo Lee ◽  
Jong Su Kim ◽  
Sang Jun Lee ◽  
...  
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Electric Fields ◽  
Bias Voltage ◽  
Tunnel Junction ◽  
Photogenerated Carrier ◽  
Internal Electric Field ◽  
Junction Solar Cell ◽  
Photoreflectance Spectroscopy ◽  
Dc Bias

For examining the carrier movements through tunnel junction, electrically and optically-biased photoreflectance spectroscopy (EBPR and OBPR) were used to investigate the internal electric field in the InGaP/GaAs dual junction solar cell at room temperature. At InGaP and GaAs, the strength of p-n junction electric fields (Fpn) was perturbed by the external DC bias voltage and CW light intensity for EBPR and OBPR experiments, respectively. Moreover, the Fpn was evaluated using the Fast Fourier Transform (FFT) of the Franz—Keldysh oscillation from PR spectra. In the EBPR, the electric field decreased by increasing the DC bias voltage, which also decreased the potential barrier. In OBPR, when incident CW light is absorbed by the top cell, the decrement of the Fpn in the GaAs cell indicates that the photogenerated carriers are accumulated near the p-n junction. Photogenerated carriers in InGaP can pass through the tunnel junction, and the PR results show the contribution of the modification of the electric field by the photogenerated carriers in each cell. We suggest that PR spectroscopy with optical-bias and electrical-bias could be analyzed using the information of the photogenerated carrier passed through the tunnel junction.

scholarly journals Demonstration of a GaSb/GaAs Quantum Dot Intermediate Band Solar Cell Operating at Maximum Power Point

2020 ◽  
Vol 125 (24) ◽  
Author(s):  
I. Ramiro ◽  
J. Villa ◽  
J. Hwang ◽  
A. J. Martin ◽  
J. Millunchick ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Maximum Power ◽  
Maximum Power Point ◽  
Intermediate Band ◽  
Intermediate Band Solar Cell ◽  
Gaas Quantum Dot ◽  
Power Point
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