The twin formations on different growth planes of silicon crystal growth from melt by a molecular dynamics study

2019 ◽  
Vol 572 ◽  
pp. 184-189 ◽  
Author(s):  
Shiming Zhai ◽  
Chi Zhang ◽  
Naigen Zhou ◽  
Lin Huang ◽  
Maohua Lin ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Crystal Growth ◽  
Silicon Crystal ◽  
Growth From Melt

Molecular Dynamics Simulations of the Effect of Carbon Concentration on Silicon Carbide Crystal Growth

2013 ◽  
Vol 423-426 ◽  
pp. 597-601
Author(s):  
Qiu Fa Hu ◽  
Nai Gen Zhou ◽  
Tao Hong ◽  
Lan Luo ◽  
Ke Li ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Growth Rate ◽  
Silicon Carbide ◽  
Crystal Growth ◽  
Molecular Dynamics Simulations ◽  
Carbon Concentration ◽  
Atomic Layer ◽  
Crystal Growth Rate ◽  
Growth From Melt ◽  
Dynamics Simulations

The effect of carbon concentration on SiC crystal growth from melt at 2900 K has been investigated by molecular dynamics simulations. The inter-atomic forces are calculated by MEAM potential. Atomic layer density showed that, with the carbon concentration increasing in the range of 1%-70%, the SiC crystal growth rate increased first as the c concentration less than 45%, and then decreased as the c concentration more than 50%. The number of defected atoms showed that the SiC crystal growth rate had exponent relation to the C concentration both during increasing and decreasing process.

Molecular Dynamics Studies of Surface Nucleation and Crystal Growth of Si on SiO2 Substrates

2005 ◽  
Vol 899 ◽  
Author(s):  
Byoung-Min Lee ◽  
Hong Koo Baik ◽  
Takahide Kuranaga ◽  
Shinji Munetoh ◽  
Teruaki Motooka
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Crystal Growth ◽  
Surface Energy ◽  
Md Simulations ◽  
Lower Surface ◽  
Surface Nucleation ◽  
Lower Surface Energy ◽  
Potential Parameters ◽  
Si Thin Film

AbstractMolecular dynamics (MD) simulations of atomistic processes of nucleation and crystal growth of silicon (Si) on SiO2 substrate have been performed using the Tersoff potential based on a combination of Langevin and Newton equations. A new set of potential parameters was used to calculate the interatomic forces of Si and oxygen (O) atoms. It was found that the (111) plane of the Si nuclei formed at the surface was predominantly parallel to the surface of MD cell. The values surface energy for (100), (110), and (111) planes of Si at 77 K were calculated to be 2.27, 1.52, and 1.20 J/m2, respectively. This result suggests that, the nucleation leads to a preferred (111) orientation in the poly-Si thin film at the surface, driven by the lower surface energy.

The development of an inspection system for defects in silicon crystal growth

2013 ◽  
Vol 20 (2) ◽  
pp. 224-226 ◽  
Author(s):  
Ya-Cheng Liu ◽  
Hsin-Yi Tsai ◽  
Min-Wei Hung ◽  
Kuo-Cheng Huang
Keyword(s):  
Crystal Growth ◽  
Silicon Crystal ◽  
Inspection System

Molecular-Dynamics Simulations of Recrystallization Processes in Silicon: Nucleation and Crystal Growth in the Solid-Phase and Melt

2019 ◽  
Vol 3 (8) ◽  
pp. 207-213
Author(s):  
Teruaki Motooka ◽  
Shinji Munetoh ◽  
Ryuzo Kishikawa ◽  
Takahide Kuranaga ◽  
Tomohiko Ogata ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Crystal Growth ◽  
Molecular Dynamics Simulations ◽  
Solid Phase ◽  
Dynamics Simulations
Sign in / Sign up

Export Citation Format

Share Document