Electron states and electron Raman scattering in an asymmetrical double quantum well: External electric field

2018 ◽  
Vol 545 ◽  
pp. 215-221 ◽  
Author(s):  
L. Ferrer-Galindo ◽  
Ri. Betancourt-Riera ◽  
Re. Betancourt-Riera ◽  
R. Riera
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Raman Scattering ◽  
External Electric Field ◽  
Double Quantum ◽  
Electron States ◽  
Double Quantum Well

BEHAVIOR OF ELECTRON STATES IN GaAs/AlGaAs DOUBLE QUANTUM WELL STRUCTURE WITH STRONGLY ASYMMETRIC BARRIERS IN AN EXTERNAL ELECTRIC FIELD

2004 ◽  
Vol 03 (01n02) ◽  
pp. 203-211 ◽  
Author(s):  
Yu. A. ALESHCHENKO ◽  
V. V. KAPAEV ◽  
Yu. V. KOPAEV ◽  
P. S. KOP'EV ◽  
V. M. USTINOV ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
External Electric Field ◽  
Active Element ◽  
Double Quantum ◽  
Electron States ◽  
Quantum Well Structure ◽  
Peak Intensity ◽  
Double Quantum Well ◽  
Asymmetric Barriers

The specific features of the behavior of electron states in GaAs / AlGaAs double quantum well structure with strongly asymmetric barriers in an external electric field have been studied both theoretically and experimentally. This structure is the principal part of the active element of a quantum unipolar laser proposed by us earlier, since it contains the lower laser subband possessing the property of 2D–3D transformation. The drastic variations in the photoluminescence peak intensity, FWHM, and area with field demonstrate the possibility of controlling the dimensionality of this subband.

Effect of external electric field on multisubband electron mobility in n-V-shaped double quantum well HEMT structure

2020 ◽  
Vol 95 (3) ◽  
pp. 034002
Author(s):  
Ajit K Panda ◽  
Sangeeta K Palo ◽  
Narayan Sahoo ◽  
Trinath Sahu ◽  
Tarini Charan Tripathy
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
External Electric Field ◽  
Electron Mobility ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Hemt Structure

scholarly journals Asymmetric double quantum wells with smoothed interfaces

Open Physics ◽  
2012 ◽  
Vol 10 (2) ◽  
Author(s):  
Vladimir Gavryushin
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
External Electric Field ◽  
Energy Levels ◽  
Double Quantum ◽  
Inverse Population ◽  
Double Quantum Well ◽  
The One ◽  
Interface Disorder ◽  
Asymmetric Double Quantum Wells

AbstractWe have derived and analyzed the wavefunctions and energy states for an asymmetric double quantum well (ADQW), broadened due to interdiffusion or other static interface disorder effects, within a known discreet variable representative approach for solving the one-dimensional Schrodinger equation. The main advantage of this approach is that it yields the energy eigenvalues, and the eigenvectors, in semiconductor nanostructures of different shapes as well as the strengths of the optical transitions between them. The behaviour of ADQW states for the different mutual widths of coupled wells, for the different degree of broadening, and under increasing external electric field is investigated. We have found that interface broadening effects change and shift energy levels, not monotonously, but the resonant conditions near an energy of sub-band coupling regions do not strongly distort. Also, it is shown that an external electric field may help to achieve resonant conditions for inter-sub-band inverse population by intrawell emission of LO-phonons in diffuse ADQW.

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